• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.85-85
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• 1999

Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT)는 높은 유전율로 인해 강유전체 메모리 소자의 응용을 위한 연구가 되고 있으며 또한 전왜(electrostrictive)성을 갖고 있어 이력현상을 갖지 않음으로 최근 들어 미세전기기계소자(MEMS)로의 연구가 활발히 되고 있다. 본 연구에서는 MEMS 소자로서의 응용을 위해 저응력 SiNx가 형성된 Si 기판위에 Pt 전극 혹은 산화물 전극 SrRuO3를 갖는 PMN-PT 박막 캐패시터를 제조하였다. 박막 하부의 구조는 금속전극의 경우 Pt/Ti/LTO/SiNx/Si이고 산화물전극은 SrRuO3/Ru/SiNx/Si의 구조를 갖는다. PMN-PT 박막은 alkoxide를 기반으로 회전 coating 방법을 사용하여 박막 하부층의 변화를 주어서 성장시켰다. PMN-PT 용액의 합성은 분말합성법에서 사용하는 columbite 방법을 응용하여 상대적으로 반응정도가 낮은 Mg를 Nb와 우선 반응하여 Mg-Nb solution을 얻고 Pb-acetate 용액과 합성하여 PMN을 제조한 후 PT를 반응시켜서 제조하였다. PMN-PT 박막에서 동일한 공정조건 하에서 박막 하부층의 구조에 따라서 PMN-PT 박막의 조성이 A2B2O6의 조성을 가지는 파이로클러어상이 형성되거나 또는 ABO3인 페로브스카이트상이 형성되는 것을 관찰하였다. 금속 전극인 Pt를 하부전극으로 사용한 경우는 혼재상이 형성되어 패로브스카이드 PMN-PT를 얻기 위해 seed layer로서 PbTiO3를 사용하였으며 이러한 seed layer 위에 형성된 PMN-PT를 형성하는 경우 rutile 구조인 RuO2 위에 성장시킨 PMN-PT는 파이로클로어와 페로브스카이트의 혼재상이 얻어졌으나 pseudo-perovskite 구조인 SrRuO3 박막 위에 형성된 PMN-PT 박막에서는 페로브스카이트가 주된 상으로 얻어졌다. 즉 하부층(전극 또는 seed layer)으로 perovskite 구조를 갖는 박막을 형성하게 되면 페로브스카이트를 갖는 PMN-PT 박막을 얻을 수 있었다. 전기적인 특성은 상부전극으로 Pt를 사용하여 HP 4194A로 측정을 하였다. PT seed layer를 포함한 PMN-PT 박막은 유전상수 1086과 유전손실 2.75%을 가졌다.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.22-25
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• 2000

Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.150-151
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• 2011

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.200-201
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• 2007

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.146-147
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• 2005

• Bulletin of the Korean Chemical Society
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• v.13 no.2
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• pp.122-127
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• 1992

Some perovskites $A($Cu_{1}3}Nb_{2}3}$)O_3(A=$Sr^{2+}$$, $Ba^{2+}$ and $Pb^{2+}$) and their series of mixed perovskites have been prepared by solid state reaction. Single perovskite phase was obtained in Sr or Ba rich samples, but pyrochlore phase was found in Pb rich samples. The stability of perovskite phase is dependent on the ionicity of bonding as well as the tolerance factor. All the obtained perovskites have tetragonal symmetry distorted by Jahn-Teller effect of $Cu^{2+}$. In the case of $Sr(Cu_{1}3}Nb_{2}3})O_3$, some superlattice lines caused by threefold enlarging of fundamental unit cell were observed. And, the symmetry of B site octahedron and the bonding character of B-O bond have been studied by IR, ESR and diffuse reflection spectroscopy. It appeared that the symmetry and the bonding character are influenced by such factors as the size and the basicity of A cation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.264-264
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• 2007

$B_2Mg_{2/3}/Nb_{4/3}O_7\;(B_2MN)$ thin films and $Bi_{3/2}MgNb_{3/2}O_7\;(B_{1.5}MN)$ thin films were deposited as a function of various deposition temperatures on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system. Both of their thin films are shown to crystalline phase at $500^{\circ}C$, deposition temperature, using 100W RF power. The composition of them and structural micro properties are investigated by RBS spectrum and SEM, AFM. 200 nm-thick $B_2MN$ thin films were deposited at room temperature had capacitance density of $151nF/cm^2$ at 100kHz, dissipation factor of 0.003 and had capacitance density of $584nF/cm^2$ at 100kHz, dissipation factor of 0.0045 at $500^{\circ}C$ deposition temperature. Both of their dielectric constant deposited at room temperature and at $500^{\circ}C$ were each approximately 40 and 100.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.186-191
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• 2004

The variation of magnetic properties with insulating materials(glass frits, talc and polyamide) in compressed powder cores composed of Fe$\sub$73.5/Cu$_1$Nb$_3$Si$\sub$15.5/B$\sub$7/ nanocrystalline alloy powders(size: 250～850 $\mu\textrm{m}$) and 3 wt% insulators has been investigated. Larger permeability was obtained at the frequency lower than 300～400 kHz for the powder cores including ceramic insulators(glass frits and talc) as compared to the cores with polyamide, while at higher frequency than 1 MHz the permeability of the former cores decreased rapidly. Further the cores with ceramic insulators showed larger core loss and smaller peak quality factor attained at lower frequency. On the contrary, the powder cores with polyamide exhibited high stability of permeabilities up to several MHz and superior core-loss and quality-factor properties. Moreover the dc bias property was better in the wide field range for the cores having polyamide. The enhanced magnetic properties of polyamide-added cores were attributed to the more sufficient electrical insulation between magnetic particles, where the higher insulation state was considered to be obtained from the larger volume fraction of polyamide in the powder cores.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.7-11
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• 1994

Ferromagnetic resonance experiment was performed to study the variations of micromagnetic structure with heat treatment of melt spun $Fe_{76}Cu_{1}Nb_{3}Si_{14}B_{6}$ alloy for 1h at every $50^{\circ}C$ in the temperature range of $400^{\circ}C-700^{\circ}C$. The variations of micromagnetic structure was discussed qualitatively in terms of the variations of line width ${\Delta}H_{p-p}$ and resonance magnetic field $H_{res}$. With increasing armealing temperature to $400^{\circ}C$, ${\Delta}H_{p-p}$ decreases and $H_{res}$ increases due to the decrease in magnetic anisotropy resulting from structural relaxation during heat treatment. With increasing annealing temperature from 400 to $500^{\circ}C$, ${\Delta}H_{p-p}$ increases and $H_{res}$ decreases due to the increase in magnetic anisotropy resulting from the formation of nanocrystalline particles embedded in an amorphous matrix. With increasing armealing temperature from 500 to $550^{\circ}C$, ${\Delta}H_{p-p}$ decreases and $H_{res}$ increases due to the decrease in magnetic anisotropy resulting from the formation of homogeneous nanocrystalline structure with a minor amorphous phase. Further increase in armealing temperature above $550^{\circ}C$ C causes ${\Delta}H_{p-p}$ to increase and $H_{res}$ to decrease due to the increase in magnetic anisotropy due to the formation of inhomogeneous grain structure and intermetallic compounds.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.264-268
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• 1990

A guided-wave electro-optic Mach-Zehnder interferometric modulator was fabricated on X-cut LiNbO3 . The channel waveguides were formed by proton diffusion with self-aligned SiO2-cladding. A mach-Zehnder interferometric modulator with arm lengths of 7mm has been fabricated and tested at 0.6328${\mu}{\textrm}{m}$. Its modulation depth with V$\pi$ of only 3.5V was 85% and the 3dB bandwidth was 1.6KHz. For high speed operation, the electrode dimension should be reduced to have smaller R, L, and C.