• Advances in materials Research
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• v.5 no.2
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• pp.93-105
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• 2016

KNN-based ceramics modified with small amounts of $Bi_4Zr_3O_{12}$ (BiZ) has been synthesized using high-throughput experimentation (HTE). The results from X-ray diffraction show that for samples with base composition $(K_{0.5}Na_{0.5})NbO_3$ (KNN), the phase present changes from orthorhombic to pseudo-cubic with more than 0.2 mol% BiZ addition; for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.9}Ta_{0.1})O_3$ (KNNLT), the phase present changes from a mixture of orthorhombic and tetragonal symmetry to pseudo-cubic with more than 0.4 mol % while for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.86}Ta_{0.1}Sb_{0.04})O_3$ (KNNLST), the phase present is tetragonal with <0.3 mol% BiZ addition and transforms to pseudo-cubic with more dopant addition. The microstructures of the samples show that addition of BiZ decreases the average grain size and increases the volume of pores at the grain boundaries. The values of dielectric constant for KNN and KNNLT compositions increase slightly with BiZ addition while that for KNNLST decreases gradually with BiZ addition. The dielectric loss values are between 0.02 and 0.04 for KNNLT and KNNLST compositions while they are ~ 0.05 for KNN samples. The resistivity values increases with BiZ addition and values in the range of $10^{10}{\Omega}cm$ and $10^{12}{\Omega}cm$ are obtained. The piezoelectric charge coefficient ($d{^*}_{33}$) is highest for KNNLST samples and decreases gradually from ~400 pm/V to ~100 pm/V with BiZ addition.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.170.2-170
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.260-260
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• 2007

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.879-888
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• 2001

The effects of final annealing temperature on the microstructure and creep characteristics were investigated for the Zr-lNb-0.2X (X=0, Mo, Cu) and Zr-lNb- 1Sn-0.3Fe-0.1X (X=0, Mo, Cu) alloys. The microstructures were observed by using TEM/EDS, and grain size and distributions of precipitates were analyzed using a image analyzer. The creep test was performed at $400^{\circ}C$ under applied stress of 150 MPa for 10 days. The $\beta$-Zr was observed at annealing temperature above $600^{\circ}C$. In the temperature above$ 600^{\circ}C$, the grain sizes of both alloy systems appeared to be increased with increasing the final annealing temperature. The creep strengths of Zr-1Nb-1Sn-0.3Fe-0.1X alloys were higher than those of Zr-1Nb-0.2X ones due to the effect of solid solution hardening by Sn in Zr-lNb-lSn-0.3Fe-0.1X alloy system. Also, Mo addition showed the strong effect of precipitate hardening in both alloy systems. The creep strength rapidly decreased with increasing the annealing temperature up to $600^{\circ}C$. However, a superior creep resistance was obtained in the sample that annealed to have a second phase of $\beta$-Zr. It was considered that the appearance of $\beta$-Zr would play an important role in the strengthening mechanism of creep deformation.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.308-313
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• 2001

We report the effects of the V$_2$O$_{5}$ additive on the sintering behavior and microwave dielectric properties of ZnNb$_2$O$_{6}$ ceramics. Densification temperatures of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are lowered to the range of 875-9$25^{\circ}C$ because of the liquid phase sintering. Doped samples are composed of a Zn(Nb,V)$_2$O$_{6}$ solid solution and second phases. Up to 5 wt% V$_2$O$_{5}$ is the only second phase, however, V$_2$O$_{5}$ also exists as the second phase for 10 wt% V$_2$O$_{5}$ addition. In comparison with reported values of undoped ZnNb$_2$O$_{6}$ ceramics, microwave properties of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are seriously degraded, which is confirmed to originate from the second phases. The optimum microwave properties (Q$\times$f=13,800, $\varepsilon$$_{r}$=23, $\tau$$_{f}$=-66ppm/$^{\circ}C$) are obtained from ZnNb$_2$O$_{6}$ with the addition of 5 wt% V$_2$O$_{5}$ sintered at 90$0^{\circ}C$.90$0^{\circ}C$.EX>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.289-293
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• 2004

PNW-PMN-PZT ceramics were fabricated with the variations of Nb$_2$O$_{5}$ addition and their microstructural and piezoelectric characteristics were investigated. When the amount of Nb$_2$O$_{5}$ increased, grain size decreased gradually. At 0.3wt％ Nb$_2$O$_{5}$ which is the same weight percent with Fe$_2$O$_3$, maximum tetragonality(c/a) and density were shown due to the complexed doping effects. Also, this composition that showed Qm of 2,041, kp of 0.55, grain size of 2.5${\mu}{\textrm}{m}$ and $\varepsilon$r of 1704 were proper for high power application. Using this composition, Rosen-type piezoelectric transformer was fabricated as the size of 1 ${\times}$ 16 ${\times}$ 5㎣ and its electrical characteristics were investigated with the variations of load resistance and driving frequency. At the resistance of 200㏀, maximum step-up ratio of 13.68 was shown. After driving PDA CCFL for 25 min using the inverter circuit, at driving frequency of 214.4KHz, input voltage of 31.78 V and input current of 21.1mA were measured at the input part of piezoelectric transformer. And then, output voltage of 293.2 V and output current of 2.2mA were shown at the output part of piezoelectric transformer. At the same time, efficiency of 96.2％ and temperature rise of 3.5$^{\circ}C$ were appeared at the piezoelectric transformer.ormer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.498-501
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• 2001

The effects of MnO$_2$ addition on the piezoelectric properties in 0.9Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.1Pb$TiO_3$ relaxor ferroelectrics were studied in the ferroelectricity-dominated temperature range from -4$0^{\circ}C$ to 3$0^{\circ}C$. Dielectric, piezoelectric properties and electric-field- induced strain were examined to clarify the effect of MnO$_2$ addition. As the added amount of MnO$_2$ increase. dielectric and piezoelectric properties of Pb(Mg$_{1/3}$ Nb$_{2/3}$O$_3$ became harder. From the experimental results, it was suggested that Mn behaves as a ferroelectric domain pinning element.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.8
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• pp.1068-1074
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• 1995

Effect of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ addition on the phase changes and microwave dielectric properties of BaTi $O_{3}$-3Ti $O_{2}$ ceramics were investigated. Addition of (Zn$_{1}$3/Nb$_{2}$3/) $O_{2}$ to BaTi $O_{3}$-3Ti $O_{2}$ resulted in the formation of Ba $Ti_{4}$$O_{9}$, $Ba_{2}$ $Ti_{9}$ $O_{20}$, Ba(Zn$_{1}$3/Nb$_{2}$3/) $O_{3}$, and Ti $O_{2}$ phases. Ba $Ti_{4}$$O_{9}$ phase was gradually transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$. This was identified by XRD and microstructure. As the Ba $Ti_{4}$$O_{9}$ phase transformed to $Ba_{2}$ $Ti_{9}$ $O_{20}$ phase, the dielectric constant increased to 37.5. Q*f$_{o}$ value was 40000 at x=0.04, and the temperature coefficient of resonant frequency was +10ppm/.deg. C.C.. C.C.