• Bulletin of the Korean Chemical Society
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• 제30권3호
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• pp.647-652
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• 2009

A novel spiro-type host material, 5-[4-(1-naphthyl)phenyl]-spiro[fluorene-7,9'-benzofluorene] (BH-1PN) and three new dopants, namely, 5-[diphenylamino)phenyl]-spiro[fluorene-7,9'-benzofluorene] (BH-1TPA), 5-[4-(N-phenyl (m-tolyl)amino]-spiro[fluorene-7,9'-benzofluorene] (BH-1MDPA) and 5-[(N-phenyl)-2-naphthyl]amino-spiro[fluorene- 7,9'-benzofluorene] (BH-1NPA) were designed and successfully prepared using the Suzuki or amination reactions. The electroluminescence characteristics of BH-1PN as a blue host material doped with each of the blue dopants were evaluated. The structure of the device is ITO/DNTPD/NPB/BH-1PN:5% dopant/Alq3/Al-LiF. The device obtained from BH-1PN doped with diphenyl-[4-(2-[1,1;4,1]terphenyl-4-yl-vinyl)phenyl]-amine (BD-1) showed good color purity, efficiency, luminance, and current-density characteristics.

• Bulletin of the Korean Chemical Society
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• 제34권5호
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• pp.1355-1360
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• 2013

We have developed a new multifunctional material, 4,4',4"-tris(4-naphthalen-2-yl-phenyl)amine (2-TNPA), which can be used as a blue-emitting and hole-transporting material in organic light-emitting diodes (OLEDs), as well as a donor material in organic solar cells (OSCs) and an active material in organic thin-film transistors (OTFTs). The OLED device doped with 3% 2-TNPA shows a maximum current efficiency of 3.0 $cdA^{-1}$ and an external quantum efficiency of 3.0%. 2-TNPA is a more efficient hole-transporting material than 4,4'-bis[N-(naphthyl-N-phenylamino)]biphenyl (NPD). Furthermore, 2-TNPA shows a power-conversion efficiency of 0.39% in OSC and a field-effect mobility of $3.2{\times}10^{-4}cm^2V^{-1}s^{-1}$ in OTFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.450-453
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• 2008

We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3',7',3",7"-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene[PNA-DPtzB]. Synthesized materials exhibited high Tg in the range of $175\;-\;202^{\circ}C$. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31cd/A at $10mA/cm^2$.

• 대한화학회지
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• 제54권6호
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• pp.717-722
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• 2010

Two derivatives of star shaped compounds based on naphthylamine benzene고리에 methoxy기와 ethoxy기가 치환기로 연결되어있는 naphthylamine 관련 화합물을 합성하였다. 합성한 화합물의 전자 및 열적특성을 cyclic voltametry (CV) 및 differential scanning calorimetry (DSC)를 이용하여 조사하였다.

• 마이크로전자및패키징학회지
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• 제13권4호
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• pp.71-75
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• 2006

GDI602:Rubrene(10%) 형광 시스템을 이용하여 황색 발광 OLED를 제작하고 그 특성을 평가하였다. 소자 제작에서 ITO/glass 위에 정공 주입층으로 2-TNATA[4,4',4'-tris(2-naphthylphenyl-phenyl-amino)-triphenylamine]를, 정공 수송층으로 NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4-diamine]를 진공 증착하였다. 황색 발광층으로는 GDI602를 호스트로, Rubrene를 도펀트로 사용하였다. 또한, 전자 수송층으로는 $Alq_{3}$를, 전자 주입층으로는 LiF를 사용하여 $ITO/2-TNATA/NPB/GDI602:Rubrene(10%)/Alq_{3}/LiF/Al$ 구조의 저분자 OLED를 제작하였다. 본 실험에서 제작된 황색 OLED는 562nm의 중심 발광 파장을 가지며, CIE(0.50, 0.49) 색순도, 그리고 10V의 동작전압에서 $2300\;Cd/m^{2}$ 휘도와 0.7 lm/W의 전력 효율을 나타내었다.

• Bulletin of the Korean Chemical Society
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• 제32권5호
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• pp.1475-1482
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• 2011

New spiro[benzo[c]fluorene-7,9'-fluorene] (SBFF)-based blue host materials, 9-phenyl-SBFF (BH-4P) and 5,9-diphenyl-SBFF (BH-6DP), were successfully prepared by spiro-formation of 9-phenyl-7H-benzo[c]fluoren-7-one with 2-bromobiphenyl via lithiation and reaction of 5,9-dibromo-SBFF with phenylboronic acid through the Suzuki reaction, respectively. Diphenyl-[4-(2-[1,1;4,1]terphenyl-4-yl-vinyl)-phenyl]-amine (BD-1) and N,N-diphenyl-N',N'-diphenyl-SBFF-5,9-diamine (BD-6DPA) were used as dopant materials. Blue OLEDs with the configuration ITO/N,N'-bis-[4-(di-m-tolylamino)phenyl]-N,N'-diphenylbiphenyl-4,4'-diamine (DNTPD)/bis[N-(1-naphthyl)-N-phenyl]benzidine (NPB)/host:5% dopant/SFC-137/Al-LiF were prepared from the two host materials doped with BD-1 and BD-6DPA dopants and the devices composed of BH-4P and BH-6DP doped with BD-6DPA showed blue EL spectra at 458 and 463 nm at 7 V and luminance efficiencies of 4.58 and 4.88 cd/A, respectively.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.929-932
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• 2014

We explored interfacial electronic structures in indium tin oxide (ITO)/DNTPD/N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) layer stack in an OLED to clarify the real role of an aromatic amine-based hole injection layer, DNTPD. A hole injection barrier at the ITO/DNTPD interface is lowered by 0.20 eV but a new hole barrier of 0.36 eV at the DNTPD/NPB is created. The new barrier at the DNTPD/NPB interface and its higher bulk resistance serve as hole retardation, and thus those cause the operation voltage for the ITO/DNTPD/NPB to increase. However, it improves current efficiency through balancing holes and electrons in the emitting layer.