• Journal of IKEEE
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• v.13 no.2
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• pp.126-131
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• 2009

To overcome short channel effects, wrap-around field effect transistors have drawn a great deal of attention for their superior electrostatic coupling between the channel and the surrounding gate electrode. In this paper, we introduce a bottom-up technique to fabricate a wrap-around field effect transistor using silicon nanowires as the conduction channel. Device fabrication was consisted mainly of electron-beam lithography, dielectrophoresis to accurately align the nanowires, and the formation of gate electrode using electrochemical deposition. The electrolyte for electrochemical deposition was made up of non-toxic organic-based solution and liquid nitrogen was used as a method of maintaining the shape of polymethyl methacrylate(PMMA) during the process of electrochemical deposition. Patterned PMMA can be used as a nano-template to produce wrap-around gate nano-structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.55-55
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• 2015

Today, engineers are facing new set of challenges that are quite different from the conventional ones. Information technologies are rapidly commoditizing while the paths beyond the current roadmaps became uncertain as various technologies have been pushed to their limits. Along with these changes in IT ecosystems, grand challenges such as global security, health, sustainability, and energy increasingly require trans-disciplinary solutions that go beyond the traditional arenas in STEM (Science, Technology, Engineering and Mathematics). Addressing these needs is shifting engineering education and research to a new paradigm where the emphasis is placed on the consilience for holistic and system level understanding and the convergence of technology with AHSD (arts, humanities, social science, and design). At the center of this evolutionary convergence, nanotechnologies are enabling novel functionalities such as bio-compatibility, flexibility, low power, and sustainability while on a mission to meet scalability and low cost for smart electronics, u-health, sensing networks, and self-sustainable energy systems. This talk introduces the efforts of convergence based on the emerging nano technology tool sets in the newly launched School of Integrated Technology and the Yonsei Institute of Convergence Technology at Yonsei International Campus. While the conventional devices have largely depended upon the inherent material properties, the newer devices are enabled by nanoscale dimensions and structures in increasingly standardized and scalable fabrication platform. Localized surface plasmon resonance in 0 dimensional nano particles and structures leads to subwavelength confinement and enhanced near-field interactions enabling novel field of metal photonics for sensing and integrated photonic applications [1,2]. Unique properties offered by 1 dimensional nanowires and 2 dimensional materials and structures can enable novel electronic, photonic, nano-bio, and biomimetic applications [3-5]. These novel functionalities offered by the emerging nanotechnologies are continuously finding pathways to be part of smart systems to improve the overall quality of life.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.27.1-27.1
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• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.499-505
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• 2006

Field emission of GaN and GaP nanowires, synthesized by thermal chemical vapor deposition, and their emission stabilities under oxygen and argon environments were investigated. The field emission current of GaN nanowires was seriously deteriorated under oxygen environment, while that of GaP was not. Both wires did not show any noticeable change under argon environment. The existence of oxide outer shell layers in the GaP nanowires was proposed to be a main reason for this emission stability behavior. Field emission energy distributions of electrons from these nanowires revealed that field emission mechanism of the semiconductor nanowires were different from that of carbon nanotubes.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.1-11
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• 2014

Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.549-549
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• 2012

Early detection of cancer biomarkers in the blood is of vital importance for reducing the mortality and morbidity in a number of cancers. From this point of view, immunosensors based on nanowire (NW) and carbon nanotube (CNT) field-effect transistors (FETs) that allow the ultra-sensitive, highly specific, and label-free electrical detection of biomarkers received much attention. Nevertheless 1D nano-FET biosensors showed high performance, several challenges remain to be resolved for the uncomplicated, reproducible, low-cost and high-throughput nanofabrication. Recently, two-dimensional (2D) graphene and reduced GO (RGO) nanosheets or films find widespread applications such as clean energy storage and conversion devices, optical detector, field-effect transistors, electromechanical resonators, and chemical & biological sensors. In particular, the graphene- and RGO-FETs devices are very promising for sensing applications because of advantages including large detection area, low noise level in solution, ease of fabrication, and the high sensitivity to ions and biomolecules comparable to 1D nano-FETs. Even though a limited number of biosensor applications including chemical vapor deposition (CVD) grown graphene film for DNA detection, single-layer graphene for protein detection and single-layer graphene or solution-processed RGO film for cell monitoring have been reported, development of facile fabrication methods and full understanding of sensing mechanism are still lacking. Furthermore, there have been no reports on demonstration of ultrasensitive electrical detection of a cancer biomarker using the graphene- or RGO-FET. Here we describe scalable and facile fabrication of reduced graphene oxide FET (RGO-FET) with the capability of label-free, ultrasensitive electrical detection of a cancer biomarker, prostate specific antigen/${\alpha}$ 1-antichymotrypsin (PSA-ACT) complex, in which the ultrathin RGO channel was formed by a uniform self-assembly of two-dimensional RGO nanosheets, and also we will discuss about the immunosensing mechanism.

• Journal of Adhesion and Interface
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• v.23 no.4
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• pp.116-121
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• 2022

OFET have require fine patterning technology for organic semiconductor solution process to be used in actual electronics. In this study, we compared and analyzed the soft lithography method which can form fine patterns more than the conventional spin coating method in order to confirm that it can have better electrical characteristics. The soft lithography method produced a flexible master mold using nano patterns on compact disc surfaces and obtained a 650 nm wide 2,7-Dioctyl [1] benzothieno [3,2-b] [1] benzo thiophene (C_8-BTBT) nanowires. As a result, the field-effect mobility of devices fabricated by the spin coating method was 0.0036 cm²/Vs and mobility of devices produced by soft lithography method was 0.086 cm²/Vs, which was about 20 times higher than spin-coated devices and has better electrical performance.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.8 s.350
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• pp.13-18
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• 2006

[ $SnO_2$ ] and ZnO nanostructures were grown on the surface of thin film by heat treatment of metal Sn, Zn under Ar gas flow and $O_2$ at atmospheric pressure, respectively. The sensitivity of the $SnO_2$ thin film device on which grown nanowires to CO gas(5,000 ppm) was 50 % at the operating temperature of $200^{\circ}C$. In case of using Pt as catalysts, the sensitivity was enhanced and operating temperature was reduced(73 % at $150^{\circ}C$ ). The sensitivity of the ZnO nanorods device using Cu as catalysts to NOx gas was 90 % at the operating temperature of $200^{\circ}C$. It was found that the sensitivity to CO and NOx gases for the device on which grown nanostructures was much higher than those for general thin film device.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.209-218
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• 2012

Recently, the Field Programmable Stateful Logic Array (FPSLA) was proposed as one of the most promising system integration technologies which will extend the life of the Moore's law. This work is the first proposal of the FPSLA design automation flow, and the approaches to logic synthesis, synchronization, physical mapping, and automatic placement of the FPSLA designs. The synchronization at each gate for pipelining determines the x-coordinates of cells, and reduces the placement to 1-dimensional problems. The objective function and its gradients for the non-linear optimization of the net length and placement density have been remodeled for the reduced global placement problem. Also, a recursive algorithm has been proposed to legalize the placement by relaxing the density overflow of bipartite bin groups in a top-down hierarchical fashion. The proposed model and algorithm are implemented, and validated by applying them to the ACM/SIGDA benchmark designs. The output state of a gate in an FPSLA needs to be duplicated so that each fanout gate can be connected to a dedicated copy. This property has been taken into account by merging the duplicated nets into a hyperedge, and then, splitting the hyperedge into edges as the optimization progresses. This yields additional 18.4% of the cell count reduction in the most dense logic stage. The practicality of the FPSLA can be further enhanced primarily by incorporating into the logic synthesis the constraint to avoid the concentrated fains of gates on some logic stages. In addition, an efficient algorithm needs to be devised for the routing problem which is based on a complicated graph. The graph models the nanowire crossbar which is trimmed to be embedded into the FPSLA fabric, and therefore, asymmetric. These CAD tools can be used to evaluate the fabric efficiency during the architecture enhancement as well as automate the design.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.3
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• pp.79-85
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• 2024

We investigated the crystal structural property and chemical bonding nature of cellulose nanocrystal extracted directly from cotton cellulose using high-pressure homogenizer. The nanowire-like cellulose nanocrystals were randomly distributed in the form of a dense mesh. Based on calculating the interplanar distance of the Bragg-diffracted crystal plane observed through X-ray diffraction (XRD) analysis, it was found that the cellulose nanocrystals formed by high-pressure homogenizer had a monoclinc crystal structure, corresponding to the cellulose Iβ sub-polymorph. Solid-state nuclear magnetic resonance (NMR) analysis for the quantitatively evaluation of the amorphous region in cellulose nanocrystals revealed that the crystallinity index of cellulose nanocrystals was calculated to be 53.06 %. The O/C ratio of the surface of cellulose nanocrystal was estimated to be 0.82. Further analysis showed that chemical bonds of C-C bond or C-H bond, C-O bond, O-C-O bond or C=O bond, and O-C=O bond were the main chemical bonding states of the cellulose nanocrystal surface.