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Emission Stability of Semiconductor Nanowires  

Yu, Se-Gi (Department of Physics, Hankook University of Foreign Studies)
Jeong, Tae-Won (Center for Electron Emission Source, Samsung Advanced Institute of Technology)
Lee, Sang-Hyun (Center for Electron Emission Source, Samsung Advanced Institute of Technology)
Heo, Jung-Na (Center for Electron Emission Source, Samsung Advanced Institute of Technology)
Lee, Jeong-Hee (Center for Electron Emission Source, Samsung Advanced Institute of Technology)
Lee, Cheol-Jin (Department of Electronics and Computer Engineering, Korea University)
Kim, Jin-Young (Department of Physics, Hankook University of Foreign Studies)
Lee, Hyung-Sook (Department of Physics, Hankook University of Foreign Studies)
Kuk, Yoon-Pil (Department of Physics, Hankook University of Foreign Studies)
Kim, J.M. (Center for Electron Emission Source, Samsung Advanced Institute of Technology)
Publication Information
Journal of the Korean Vacuum Society / v.15, no.5, 2006 , pp. 499-505 More about this Journal
Abstract
Field emission of GaN and GaP nanowires, synthesized by thermal chemical vapor deposition, and their emission stabilities under oxygen and argon environments were investigated. The field emission current of GaN nanowires was seriously deteriorated under oxygen environment, while that of GaP was not. Both wires did not show any noticeable change under argon environment. The existence of oxide outer shell layers in the GaP nanowires was proposed to be a main reason for this emission stability behavior. Field emission energy distributions of electrons from these nanowires revealed that field emission mechanism of the semiconductor nanowires were different from that of carbon nanotubes.
Keywords
field emission; nanowire; GaN; GaP; oxygen; stability;
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