• 대한화장품학회지
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• 제30권2호
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• pp.173-180
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• 2004

20-30nm 크기를 갖는 나노 사이즈 ZnO 입자는 염료, 러버 첨가제, 가스 센서, 바리스터, 감광제와 광촉매로서 여러 산업분야에서 사용되고 있다. 반면에 화장품 산업에서는 나노 미터 크기의 ZnO 입자는 UV 차단물질과 자연스러운 메이크업 효과를 증진시키는 소재로서 사용되고 있다. 그러나 순수 ZnO 입자는 화장품에 적용했을 때 사용감 악화로 인해 그 사용량이 제한되고 있는 실정이다. 따라서 본 논문에서는 사용감은 판상 분체의 특성을 갖으면서 ZnO 본연의 특성을 유지하는 분체를 합성하기 위해 화장품 산업에서 널리 사용되고 있는 세리사이트, 보론나이트라이드, 비스무스옥시클로라이드와 같은 판상분체에 나노 사이느 ZnO가 코팅된 고기능성 무기복합분체를 하였다. 본 논문에서는 열수침전법에 의해 무기복합분체를 합성하였다. Zn원으로서 ZnCl$_2$가 사용되었고 침전제로는 hexamethylenetetramine(HMT)과 urea를 사용하였다. 실험변수로서 출발물질의 농도, 침전제의 종류, 핵생성제의 농도, 반응온도와 반응시간을 변화시켜 실험하였다. 합성된 무기복합분체의 형태, 결정상 변화, 열특성, UV-차단효과를 관찰하기 위해 각각 FE-SEM, XRD, FT-IR, TGA-DTA, In vitro SPF 테스터 기기를 이용하여 확인하였다. 합성된 무기복합분체를 메이크업 제품에 적용시켜 사용감 테스트하였다. 본 실험 결과 판상분체의 종류에 상관없이 일정한 합성조건 범위에서 나노크기 ZnO 입자가 균일하게 코팅되었다. 코팅된 판상분체를 프레스트 파우더제품에 적용시켜 사용자 테스트한 결과 판상분체 특유의 광택은 현저히 감소되는 반면 자연스러운 화장 연출, 사용감 개선 및 부착력 향상 효과를 얻을 수 있었다.

• 한국분말재료학회지
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• 제23권5호
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• pp.348-352
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• 2016

Quantum dots (QDs) are capable of controlling the typical emission and absorption wavelengths because of the bandgap widening effect of nanometer-sized particles. These phosphor particles have been used in optical devices, photovoltaic devices, advanced display devices, and several biomedical complexes. In this study, we synthesize ZnSe QDs with controlled surface defects by a heating-up method. The optical properties of the synthesized particles are analyzed using UV-visible and photoluminescence (PL) measurements. Calculations indicate nearly monodisperse particles with a size of about 5.1 nm at $260^{\circ}C$ (full width at half maximum = 27.7 nm). Furthermore, the study results confirm that successful doping is achieved by adding $Eu^{3+}$ preparing the growth phase of the ZnSe:Eu QDs when heating-up method. Further, we investigate the correlation between the surface defects and the luminescent properties of the QDs.

• 한국분말재료학회지
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• 제12권4호
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• pp.273-278
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• 2005

Nanostructured TiN/$TiB_2$/$TiSi_2$ and TiN/$TiB_2$/$Ti_5Si_2$ composite powders have been prepared by mechanochemical reaction from mixtures of Ti, BN, and $Si_3N_4$ powders. The raw materials have reacted to form a uniform mixture of TiN, $TiB_2$ and $TiSi_2$ or $Ti_5Si_3$ depending on the amount of $Si_3N_4$ used in the starting mixtures, and the reaction proceeded through so-called mechanically activated self-sustaining reaction (MSR). Fine TiN and $TiB_2$ crystallites less than a few tens of nanometer were homogeneously dispersed in the amorphous $TiSi_2$ or $Ti_5Si_3$ matrix after milling for 12 hours. These amorphous matrices became crystalline phases after annealing at high temperatures as expected, but the original microstructure did not change significantly.

• 한국재료학회지
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• 제12권12호
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• pp.941-946
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• 2002

Both Cu and Cu-oxide nanopowders have great potential as conductive paste, solid lubricant, effective catalysts and super conducting materials because of their unique properties compared with those of commercial micro-sized ones. In this study, Cu and Cu-oxide nanopowders were prepared by Pulsed Wire Evaporation (PWE) method which has been very useful for producing nanometer-sized metal, alloy and ceramic powders. In this process, the metal wire is explosively converted into ultrafine particles under high electric pulse current (between $10^4$ and $10^{ 6}$ $A/mm^2$) within a micro second time. To prevent full oxidations of Cu powder, the surface of powder has been slightly passivated with thin CuO layer. X-ray diffraction analysis has shown that pure Cu nanopowders were obtained at $N_2$ atmosphere. As the oxygen partial pressure increased in $N_2$ atmosphere, the gradual phase transformation occurred from Cu to $Cu_2$O and finally CuO nanopowders. The spherical Cu nanopowders had a uniform size distribution of about 100nm in diameter. The Cu-oxide nanopowders were less than 70nm with sphere-like shape and their mean particle size was 54nm. Smaller size of Cu-oxide nanopowders compared with that of the Cu nanopowders results from the secondary explosion of Cu nanopowders at oxygen atmosphere. Thin passivated oxygen layer on the Cu surface has been proved by XPS and HRPD.

• 한국분말재료학회지
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• 제15권6호
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• pp.482-488
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• 2008

The indentation technique has been one of the most commonly used techniques for the measurement of the mechanical properties of materials due to its experimental ease and speed. Recently, the scope of indentation has been enlarged down to the nanometer range through the development of instrumentations capable of continuously measuring load and displacement. In addition to testing hardness, the elastic modulus of submicron area could be measured from an indentation load-displacement (P-h) curve. In this study, the hardness values of the constituent phases in Ti($C_{0.7}N_{0.3}$)-NbC-Ni cermets were evaluated by nanoindentation. SEM observation of the indented surface was indispensable in order to separate the hardness of each constituent phase since the Ti($C_{0.7}N_{0.3}$)-based cermets have relatively inhomogeneous microstructure. The measured values of hardness using nanoindentation were ${\sim}20$ GPa for hard phase and ${\sim}10$ GPa for binder phase. The effect of NbC addition on hardness was not obvious in this work.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.736-740
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• 2010

Nickel wires of 0.8 mm in diameter and 80 mm in length were electrically exploded in liquid media such as water, ethyl alcohol. The distribution of particle sizes was broad from a few micrometers to tens of nanometer. It was identified that the particles could be classified according to its sizes by using centrifugal separator. The powder prepared in distilled water showed mainly pure metallic Ni phase although a little oxide phase was observed. The powders prepared in ethyl alcohol showed complicated unknown phases, which is attributed to the compound of carbon in the organic liquid. This unknown phase was turned to pure metallic Ni phase after heat treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.462-462
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• 2013

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nanobelts, and nano-dots. In contrast to typical vaporliquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nanostructures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 chestnut burr were synthesized by using radio-frequency magnetron sputtering method. In contrast to typical sputtering method with sintered ceramic target, a Ga2O3 powder (99.99% purity) was used as a sputtering target. Several samples were prepared with varying the growth parameters, especially he growth time and the growth temperature to investigate the growth mechanism. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of Ga2O3 nano chestnut burr will be reported.

• 한국자기학회지
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• 제17권2호
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• pp.71-75
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• 2007

계면활성제를 첨가한 음향화학적 침전법으로 두 가지 크기의 아연페라이트 나노입자를 합성하였다. 열분석장치(TGA/DSC)를 이용하여 열적 특성 및 결정화 온도를 조사하였고, 결정구조 확인을 위하여 X선 회절실험을 실시하였다. 제조된 입자는 $240^{\circ}C$ 부근에서 결정생성이 시작되었으며, 결정구조는 전형적인 스피넬 구조를 나타내었다. Scherrer식에 의해 측정된 입자의 크기는 11.2nm와 13.4nm이었다. SQUID를 통하여 자기적 성질을 분석한 결과, 작은 크기의 입자에 대한 방해온도 $T_B$(Blocking temperature)가 큰 입자의 경우보다 더 높게 나타났다.

• 한국표면공학회지
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• 제46권4호
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• pp.145-152
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• 2013

The growth behavior of nanocrystalline diamond (NCD) film has been studied for three different substrates, i.e. bare Si wafer, 1 ${\mu}m$ thick W and Ti films deposited on Si wafer by DC sputter. The surface roughness values of the substrates measured by AFM were Si < W < Ti. After ultrasonic seeding treatment using nanometer sized diamond powder, surface roughness remained as Si < W < Ti. The contact angles of the substrates were Si ($56^{\circ}$) > W ($31^{\circ}$) > Ti ($0^{\circ}$). During deposition in the microwave plasma CVD system, NCD particles were formed and evolved to film. For the first 0.5h, the values of NCD particle density were measured as Si < W < Ti. Since the energy barrier for heterogeneous nucleation is proportional to the contact angle of the substrate, the initial nucleus or particle densities are believed to be Si < W < Ti. Meanwhile, the NCD growth rate up to 2 h was W > Si > Ti. In the case of W substrate, NCD particles were coalesced and evolved to the film in the short time of 0.5 h, which could be attributed to the fact that the diffusion of carbon species on W substrate was fast. The slower diffusion of carbon on Si substrate is believed to be the reason for slower film growth than on W substrate. The surface of Ti substrate was observed as a vertically aligned needle shape. The NCD particle formed on the top of a Ti needle should be coalesced with the particle on the nearby needle by carbon diffusion. In this case, the diffusion length is longer than that of Si or W substrate which shows a relatively flat surface. This results in a slow growth rate of NCD on Ti substrate. As deposition time is prolonged, NCD particles grow with carbon species attached from the plasma and coalesce with nearby particles, leaving many voids in NCD/Ti interface. The low adhesion of NCD films on Ti substrate is related to the void structure of NCD/Ti interface.