• 제목/요약/키워드: Nanobelts

검색결과 28건 처리시간 0.029초

A review of zinc oxide photoanode films for dye-sensitized solar cells based on zinc oxide nanostructures

  • Tyona, M.D.;Osuji, R.U.;Ezema, F.I.
    • Advances in nano research
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    • 제1권1호
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    • pp.43-58
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    • 2013
  • Zinc oxide (ZnO) is a unique semiconductor material that exhibits numerous useful properties for dye-sensitized solar cells (DSSCs) and other applications. Various thin-film growth techniques have been used to produce nanowires, nanorods, nanotubes, nanotips, nanosheets, nanobelts and terapods of ZnO. These unique nanostructures unambiguously demonstrate that ZnO probably has the richest family of nanostructures among all materials, both in structures and in properties. The nanostructures could have novel applications in solar cells, optoelectronics, sensors, transducers and biomedical sciences. This article reviews the various nanostructures of ZnO grown by various techniques and their application in DSSCs. The application of ZnO nanowires, nanorods in DSSCs became outstanding, providing a direct pathway to the anode for photo-generated electrons thereby suppressing carrier recombination. This is a novel characteristic which increases the efficiency of ZnO based dye-sensitized solar cells.

GaN 단결정에 의해 제조된 $Ga_2O_3$ 나노물질의 구조 (The structure of $Ga_2O_3$ nanomaterials synthesized by the GaN single crystal)

  • 박상언;조채룡;김종필;정세영
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.120-120
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    • 2003
  • The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

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Fabrication of ZnO and CuO Nanostructures on Cellulose Papers

  • Nagaraju, Goli;Ko, Yeong Hwan;Yu, Jae Su
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.315.1-315.1
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    • 2014
  • The use of cellulose papers has recently attracted much attention in various device applications owing to their natural advantageous properties of earth's abundance, bio-friendly, large-scale production, and flexibility. Conventional metal oxides with novel structures of nanorods, nanospindles, nanowires and nanobelts are being developed for emerging electronic and chemical sensing applications. In this work, both ZnO (n-type) nanorod arrays (NRAs) and CuO (p-type) nanospindles (NSs) were synthesized on cellulose papers and the p-n junction property was investigated using the electrode of indium tin oxide coated polyethylene terephthalate film. To synthesize ZnO and CuO nanostructures on cellulose paper, a simple and facile hydrothermal method was utilized. First, the CuO NSs were synthesized on cellulose paper by a simple soaking process, yielding the well adhered CuO NSs on cellulose paper. After that, the ZnO NRAs were grown on CuO NSs/cellulose paper via a facile hydrothermal route. The as-grown ZnO/CuO NSs on cellulose paper exhibited good crystalline and optical properties. The fabricated p-n junction device showed the I-V characteristics with a rectifying behaviour.

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Growth Mechanism of Self-Catalytic Ga2O3 Nano-Burr Grown by RF Sputtering

  • 박신영;최광현;강현철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.462-462
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    • 2013
  • Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nanobelts, and nano-dots. In contrast to typical vaporliquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nanostructures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 chestnut burr were synthesized by using radio-frequency magnetron sputtering method. In contrast to typical sputtering method with sintered ceramic target, a Ga2O3 powder (99.99% purity) was used as a sputtering target. Several samples were prepared with varying the growth parameters, especially he growth time and the growth temperature to investigate the growth mechanism. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of Ga2O3 nano chestnut burr will be reported.

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산화아연 압전 나노전력발전소자 기반 에너지 하베스팅

  • 김상우
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.49-49
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    • 2010
  • Nanopiezotronics is an emerging area of nanotechnology with a variety of applications that include piezoelectric field-effect transistors and diodes, self-powered nanogenerators and biosystems, and wireless nano/biosensors. By exploiting coupled piezoelectric and semiconducting characteristics, it is possible for nanowires, nanobelts, or nanorods to generate rectifying current and potential under external mechanical energies such as body movement (handling, winding, pushing, and bending) and muscle stretching, vibrations (acoustic and ultrasonic waves), and hydraulic forces (body fluid and blood flow). Fully transparent, flexible (TF) nanogenerators that are operated by external mechanical forces will be presented. By controlling the density of the seed layer for ZnO nanorod growth, transparent ZnO nanorod arrays were grown on ITO/PES films, and a TF conductive electrode was stacked on the ZnO nanorods. The resulting integrated TF nanodevice (having transparency exceeding 70 %) generated a noticeable current when it was pushed by application of an external load. The output current density was clearly dependent on the force applied. Furthermore, the output current density depended strongly on the morphology and the work function of the top electrode. ZnO nanorod-based nanogenerators with a PdAu, ITO, CNT, and graphene top electrodes gave output current densities of approximately $1-10\;uA/cm^2$ at a load of 0.9 kgf. Our results suggest that our TF nanogenerators are suitable for self-powered TF device applications such as flexible self-powered touch sensors, wearable artificial skins, fully rollable display mobile devices, and battery supplements for wearable cellular phones.

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대기 분위기에서 열증발법에 의해 성장된 여러 가지 형상의 일차원 MgO 나노구조 (One-Dimensional MgO Nanostructures with Various Morphologies Grown by Thermal Evaporation Method under Atmospheric Environment)

  • 김남우;김진수;이근형
    • 한국재료학회지
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    • 제33권7호
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    • pp.279-284
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    • 2023
  • One-dimensional MgO nanostructures with various morphologies were synthesized by a thermal evaporation method. The synthesis process was carried out in air at atmospheric pressure, which made the process very simple. A mixed powder of magnesium and active carbon was used as the source powder. The morphologies of the MgO nanostructures were changed by varying the growth temperature. When the growth temperature was 700 ℃, untapered nanowires with smooth surfaces were grown. As the temperature increased to 850 ℃, 1,000 ℃ and 1,100 ℃, tapered nanobelts, tapered nanowires and then knotted nanowires were sequentially observed. X-ray diffraction analysis revealed that the MgO nanostructures had a cubic crystallographic structure. Energy dispersive X-ray analysis showed that the nanostructures were composed of Mg and O elements, indicating high purity MgO nanostructures. Fourier transform infrared spectra peaks showed the characteristic absorption of MgO. No catalyst particles were observed at the tips of the one-dimensional nanostructures, which suggested that the one-dimensional nanostructures were grown in a vapor-solid growth mechanism.

수열법으로 성장한 ZnO Nanorod/ZnO/Si(100)의 특성 (Characteristics of ZnO Nanorod/ZnO/Si(100) Grown by Hydrothermal Method)

  • 정민호;진용식;최성민;한덕동;최대규
    • 한국재료학회지
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    • 제22권4호
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    • pp.180-184
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    • 2012
  • Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

나노인덴터 압입팁의 특성에 따른 표면 이미지 오차 연구 (Errors of Surface Image Due to the Different Tip of Nano-Indenter)

  • 김수인;이찬미;이창우
    • 한국진공학회지
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    • 제18권5호
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    • pp.346-351
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    • 2009
  • 선폭의 감소와 소자 집적도의 증가로 인하여 향후 현재 사용되고 있는 탑-다운(Top-down) 생산방식에서 바텀-업(Bottomup) 방식의 소자 생산이 예상되고 있으며, 이와 관련된 연구가 활발히 진행 중에 있다. 대표적으로 나노와이어(Nanowire)와 나노벨트(Nanobelt)를 이용한 소자 개발이 한 대안이며, 이러한 소자 개발을 위해 물질의 물성 특성 연구를 위하여 나노인덴터를 이용한 물성 연구가 진행 중이다. 특히 나노인덴터는 나노 크기의 구조물에 대한 연구를 위하여 부가적으로 원자힘현미경(AFM; atomic force microscope) 기능을 제공하며, 이를 통하여 얻어진 표면 이미지를 이용하여 나노 구조물의 정확한 위치에 대한 물성 정보를 제공하게 된다. 그러나 나노인덴터에서 사용되는 팁(tip)은 기존의 원자현미경에서 사용되는 팁에 비하여 상대적 크기가 상당히 큰 특징이 있어 나노인덴터에 의한 표면 이미지에는 상당한 오차가 발생하게 된다. 따라서 본 연구에서는 나노인덴터에서 대표적으로 사용되는 50nm 벌코비치 팁(Berkovich tip)과 1um $90^{\circ}$ 원뿔형 팁(Conical tip)을 이용하였으며, 각 팁에 대한 표면 특성을 확인하기 위하여 박막 표면을 각 팁으로 압입하여 압입 후 표면 영상과 압입 깊이를 통하여 팁의 특성을 확인하였다. 이후 나노인덴터를 이용하여 100nm급 나노 구조물에서 표면 주사를 실시하여 획득된 이미지와 기존 원자현미경을 이용한 표면 이미지를 비교하여 오차를 획득하였다. 또한 각 팁의 외형으로 이론적으로 계산된 오차와 비교하였다.