• Title/Summary/Keyword: Nano-texturing

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Far-Infrared Emission Characteristics of Germanium Included Fabrics for Emotional Garment (게르마늄 함유 감성의류용 직물의 원적외선 방출 특성)

  • Kim, Hyun-Ah;Kim, Seung-Jin
    • Science of Emotion and Sensibility
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    • v.13 no.4
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    • pp.687-692
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    • 2010
  • This paper surveys emission characteristics of Far-infrared of the fabrics fabricated with germanium imbedded sheath-core conjugate composite filaments. For this purpose, master batch chip was prepared with PET semi-dull chip and nano sized germanium particles and sheath-core type conjugate composite filament was spun using this master batch chip and polyester semi dull. The emission power and emissivity of the germanium imbedded fabrics were measured and investigated using FT-IR spectrophotometer by KICM- FIR 1005 measurement method. In addition, the fabric mechanical properties were measured and discussed with the effects of the optimum texturing process conditions and fabric structural design conditions. The sheath/core type PET composite germanium imbedded filaments were manufactured by the optimum spinning condition, its tenacity and breaking strain showed the same level as the regular PET filament. The tenacity and breaking strain of the DTY showed good physical properties and no problem in the weaving process. Then, wet and dry shrinkages showed higher values than those of regular PET filament. The emission power of the germanium imbedded fabric was $3.53{\times}10^2W/m^2$ at the $5-20{\mu}m$ wave length range, and emissivity was 0.874. The fabric hand of germanium imbedded fabrics was inhanced by the optimum texturing process and fabric structural design with improved mechanical properties such as fabric bending and compressional properties.

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Effect of Substrate Temperature on the Emission Characteristics of ZnO Films Grown by Pulsed Laser Deposition (기판 온도의 영향에 따른 펄스레이저 증착법으로 성장된 ZnO 박막의 발광 특성)

  • Kim, Y.H.;Kim, S.I.
    • Journal of the Korean Vacuum Society
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    • v.18 no.5
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    • pp.358-364
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    • 2009
  • We investigated the growth of ZnO thin films with prominent emission characteristics through minimizing the formation of defects by using pulsed laser deposition (PLD). To do so, the ZnO films were deposited on sapphire(0001) substrates at the substrate temperature of $400-850^{\circ}C$ and then the variation of their structural and optical properties were analyzed by x-ray diffraction, atomic force microscope and photoluminescence. As a result, all ZnO films were grown with c-axis preferential orientation irrespective of the substrate temperature. However, the crystallinity and stress state were dependent on the substrate temperature and the ZnO film deposited at $600^{\circ}C$ showed the best surface morphology and crystallinity with nearly no strain. And also this film exhibited outstanding emission characteristics from the viewpoint of full width half maximum of UV emission peak as well as visible emission due to defects. These results indicate that the emission characteristics of the ZnO films are strongly related to their structural characteristics influenced by substrate temperature. Consequently, ZnO films with strong UV emission and nearly no visible emission, which are applicable to UV emission devices, could be grown at the substrate temperature of $600^{\circ}C$ by PLD.