• Journal of the Korean institute of surface engineering
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• v.52 no.1
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• pp.16-22
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• 2019

The structural change of DLC coatings during long-term wear test and dicing test under the low loading condition was investigated. DLC coatings were applied for the precision injection molds of a modified SNCM steel for the extension of life and the micro-diamond blades for the high cutting efficiency and the increase in life. A ball-on-disc wear tests in the mold steel and a dicing tests in the micro-diamond blades were conducted to understand degradation of DLC coatings. The degradation of DLC coatings for the injection mold steel and the micro-diamond blades during the wear and dicing tests were studied with Raman Spectroscopy. Raman peaks were divided two bands(D band and G band) to study the degradation process of DLC structure. By the wear test, polished condition of wear marks were observed to be maintained until 10 hrs of wear test period is given, but small striation marks appeared in 20 hours wear test. It was observed that $I_D/I_G$ ratios changed as the degradation of DLC coatings is proceeded during the wear tests and the dicing tests. It is suggested that the change in $I_D/I_G$ value possibly reflected from the composition of $sp^2$ and $sp^3$ bondings in DLC layers relevant to the change in mechanical and physical property.

• Korean Journal of Optics and Photonics
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• v.32 no.6
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• pp.259-265
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• 2021

Recently, lens manufacturing and assembly technology has greatly improved. However, tight requirements of manufacturing and assembly lead to an increase in cost and manufacturing time, and in some cases the performance of an optical system may deteriorate depending on the operating environment's conditions, such as temperature or vibration. In addition, the use of a compensator is an effective method to reduce sensitivity in an ultra-precision optical system, but in the case of a small lens, such as that in an endoscope, it is difficult to use a compensator due to the size limitation of the lens barrel. Therefore, minimizing lens sensitivity is the most important technology in lens design. For this reason, there have been various attempts to reduce the lens sensitivity, and there is a trend to add functions to reduce the sensitivity in the lens design S/W. In this paper, we introduce a design technology that minimizes lens sensitivity. We first design a lens with quite good performance, then analyze the sensitivity of this lens, make a multi-configuration with high-sensitivity element error, and then reoptimize it. We prove with an example that this design technique is very effective.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.74-75
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• 2000

The past few decades have witnessed the development of very robust technique, known as magneto-optical trap(MOT), for cooling and trapping of neutral atoms using lasers and magnetic fields. This technique can easily produce cooled atoms to a temperature range of nano-kelvin $s^{(1)}$ . These laser cooled and trapped atoms have found applications in various fields, such as ultrahigh resolution spectroscopy, precision atomic clocks, very cold atomic collision physics, Bose-Einstein Condensation, the Atom laser, etc. Particularly, a few isolated atoms of very low temperature are needed in the cavity QED studies in the optical regime. One can obtain such atoms from a MOT using the atomic fountain technique. The widely used technique for atomic fountain is, first to cool and trap the neutral atoms in MOT. And then launch them in the vertical (1, 1, 1) direction with respect to cooling beams, using moving molasses technique. Recently, this technique combined with the cavity-QED has opened an active area of basic research. This way atoms can be strongly coupled to the optical radiation in the cavity and leads to various new effects. Trapping of single atom after separating it from MOT in the high Q-optical cavity is actively initiated presentl $y^{(2.3)}$. This will help to sharpen our understanding of atom-photon interaction at quantum level and may lead to the development of single-atom laser. Our efforts to develop an $^{85}$ Rb-atomic fountain is in progress. (omitted)

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.13-20
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• 2023

The process of microelectromechanical system (MEMS) fabrication involves surface treatment to impart functionality to the device. Such surface treatment method is the self-assembled monolayer (SAM) technique, which modifies and functionalizes the surface of MEMS components with organic molecule monolayer, possessing a precisely controllable strength that depends on immersion time and solution concentration. These monolayers spontaneously adsorb on polymeric substrates or metal/ceramic components offering high precision at the nanoscale and modifying surface properties. SAM technology has been utilized in various fields, such as tribological property control, mass-production lithography, and ultrasensitive organic/biomolecular sensor applications. This paper provides an overview of the development and application of SAM technology in various fields.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.8 no.1
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• pp.1-11
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• 2013

The femto fusion technology refers to not only the technology for femtosecond($10^{-15}$ second) laser and but also the fusion technology of its application. This technology is comparable to the nano technology, the extreme technology on the space, and is of extreme time-domain technology. Now, we need to develop the hyperfine and high-precision femto fusion process technology which allows to miniaturize and highly integrate the products of mobile, semiconductor and display industries, the national main focusing growth industries. However, The femtosecond laser fabrication technology is essential in the development of fusion technology, but only a few of domestic researchers can handle the former. Under this condition, our government plans to develop the "femto fusion technology infrastructure project" as one of the ICT research infrastructure. So the purpose of this study is to analyze the feasibility of this project. We applied AHP(analytic hierarchy process) for this study. The final result shows that all the repondent's score is over 0.55 and the aggregated score is 0.846. And as a consequence, we can conclude that to do this project is feasible.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.1
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• pp.20-26
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• 2015

Ceramic ink-jet printing technology in art tiles, decorated tablewares and other porcelain products has many advantages of fast and precision printing of various images with high efficiency and low cost. For the application to ink-jet printing, ceramic ink requires a stable dispersibility with nano-sized pigments. In this paper, characteristics of pink-red aqueous ceramic ink for ink-jet printing was demonstrated. $CaCr_{0.1}Sn_{0.8}SiO_5$ pigment was synthesized using solid state reaction and deagglomerated using attrition milling. The aqueous ceramic ink contains 10 wt% of the obtained $CaCr_{0.1}Sn_{0.8}SiO_5$ nanopigment with 0.4 wt% of sodium dodecyl sulfate (SDS) as a dispersion agent. Viscosity of $CaCr_{0.1}Sn_{0.8}SiO_5$ aqueous ceramic ink was adjusted using 0.18 wt% of polyvinyl alcohol (PVA) for a suitable jetting from the nozzle. The prepared pink-red ceramic ink showed a good jetting property with formation of a single sphere-shaped droplet after $180{\mu}s$ without a tail and satellite droplet.