• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.463-463
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• 2013

This paper reports the synthesis and characterization of ZnO:Ga nano-structures deposited on Au/SiNx/Si(001) by radio-frequency sputtering. The effect of the temperature on the microstructure of the as-grown ZnO:Ga thin films was examined. The growth mode of ZnO:Ga nano-structures can be explained by the profile coating, i.e. the ZnO nano-structures were formed with a morphological replica of Au seeds. Initially, the ZnO:Ga nano-structures were overgrown on top of Au nano-crystals. Small ZnO:Ga nano-dots were then nucleated on hexagonal ZnO:Ga discs.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.211-214
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• 2013

The effects of a Ni coating on the sensing properties of nano ZnO:Ni based gas sensors were studied for $CH_4$ and $CH_3CH_2CH_3$ gases. Nano ZnO sensing materials were prepared by the hydrothermal reaction method. The Ni coatings on the nano ZnO surface were deposited by the hydrolysis of zinc chloride with $NH_4OH$. The weight % of Ni coating on the ZnO surface ranged from 0 to 10 %. The nano ZnO:Ni gas sensors were fabricated by a screen printing method on alumina substrates. The structural and morphological properties of the nano ZnO : Ni sensing materials were investigated by XRD, EDS, and SEM. The XRD patterns showed that nano ZnO : Ni powders with a wurtzite structure were grown with (1 0 0), (0 0 2), and (1 0 1) dominant peaks. The particle size of nano ZnO powders was about 250 nm. The sensitivity of nano ZnO:Ni based sensors for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas was measured at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity of the ZnO:Ni sensor to $CH_4$ gas and $CH_3CH_2CH_3$ gas was observed at Ni 4 wt%. The response and recovery times of 4 wt% Ni coated ZnO:Ni gas sensors were 14 s and 15 s, respectively.

• Journal of Korean Society of Environmental Engineers
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• v.36 no.11
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• pp.771-780
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• 2014

In this study, the various organic supports (i.e., silicone, acrylonitrile-butadiene-styrene, epoxy, and, butadiene rubber) with great sorption capacity of organic contaminants were chosen to develop nano-ZnO/organic composites (NZOCs) and to prevent the detachment of nano-ZnO particles. The water resistance of the developed NZOCs were evaluated, and the feasibility of the developed NZOCs were investigated by evaluating the removal efficiency of 1,1,2-trichloroethylene (TCE) in the aqueous phase. Based on the results from water-resistance experiments, long-term water treatment usage of all NZOCs was found to be feasible. According to the FE-SEM, EDX, and imaging analysis, nano-ZnO/butadiene rubber composite (NZBC) with various sizes and types of porosity and crack was measured to be coated with relatively homogeneously-distributed nano-ZnO particles whereas nano-ZnO/silicone composite (NZSC), nano-ZnO/ABS composite (NZAC), and nano-ZnO/epoxy composite (NZEC) with poorly-developed porosity and crack were measured to be coated with relatively heterogeneously-distributed nano-ZnO particles. The sorption capacity of NZBC was close to 60% relative to the initial concentration, and this result was mainly attributed to the amorphous structure of NZBC, hence the hydrophobic partitioning of TCE to the amorphous structure of NZBC intensively occurred. The removal efficiency of TCE in aqueous phase using NZBC was close to 99% relative to the initial concentration, and the removal efficiency of TCE was improved as the amount of NZBC increased. These results stemmed from the synergistic mechanisms with great sorption capability of butadiene rubber and superior photocatalytic activities of nano-ZnO. Finally, the removal efficiency of TCE in aqueous phase using NZBC was well represented by linear model ($R^2{\geq}0.936$), and the $K_{app}$ values of NZBC were from 2.64 to 3.85 times greater than those of $K_{photolysis}$, indicating that butadiene rubber was found to be the suitable organic supporting materials with enhanced sorption capacity and without inhibition of photocatalytic activities of nano-ZnO.

• Korean Journal of Materials Research
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• v.25 no.6
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• pp.300-304
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• 2015

Nanorod ZnO and spherical nano ZnO for gas sensors were prepared by hydrothermal reaction method and hydrazine method, respectively. The nano-ZnO gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties were investigated for hydrocarbon gas. The effects of Co concentration on the structural and morphological properties of the nano ZnO:Co were investigated by X-ray diffraction and scanning electron microscope (SEM), respectively. XRD patterns revealed that nanorod and spherical ZnO:Co with a wurtzite structure were grown with (100), (002), (101) peaks. The sensitivity of nanorod and spherical ZnO:Co sensors was measured for 5 ppm $CH_4$ and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to the $CH_4$ and $CH_3CH_2CH_3$ gas of spherical nano ZnO:Co sensors was observed at Co 6 wt%. The spherical nano ZnO:Co sensor exhibited a higher sensitivity to hydrocarbon gas than nanorod ZnO.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.260-263
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• 2008

The bending test of an individual ZnO nanorod was performed with a nano-manipulator and a force sensor inside the scanning electron microscope (SEM), and the bending properties of ZnO nanorod were also discussed. The ZnO nanorod used in this experiment was fabricated by means of solution base process. The force sensor used for bending test of ZnO nanorod was typed with cantilever. The force sensor was mounted on the nano-manipulator. The nano-manipulator was controlled and manipulated by a personal computer. The each end of an individual ZnO nanorod was attached on the rigid support and the tip of the force sensor with an electron beam exposure, and then the bending test was carried out by controlling of the nano-manipulator. The bending modulus of a ZnO nanorod was calculated at 69.35GPa after the bending test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.294-295
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• 2006

Varistor fabricated with ZnO nano-powder was studied about the characteristic of energy capability in this paper. ZnO nano-powder varistor were sintered in air at $1050\;^{\circ}C$. The electrical properties and residual voltage of ZnO nano-powder varistor were obtained. Our ZnO nano-powder varistor has about 3 times of electric field at varistor voltage as compared with commercial ZnO varistor fabricated with micro-powder. In the current impulse withstand test, our nano varistor has had better performance than micro varistor. To analysis energy capability take infrared images for pyrexia distribution of each varistor. ZnO Nano-powder varistor has shown much quick response property because of increasing effective cross-section.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.236.1-236.1
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• 2015

The surface morphology of front transparent conductive oxide (TCO) films is very important to achieve high current density in amorphous silicon (a-Si) thin film solar cells since it can scatter the light in a better way. In this study, we present the low cost hydrothermal deposited uniform zinc oxide (ZnO) nano-flower structure with various aspect ratios for a-Si thin film solar cells. The ZnO nano-flower structures with various aspect ratios were grown on the RF magnetron sputtered AZO films. The diameters and length of the ZnO nano-flowers was controlled by varying the annealing time. The length of ZnO nano-flowers were varied from 400 nm to $2{\mu}m$ while diameter was kept higher than 200 nm to obtain different aspect ratios. The ZnO nano-flowers with higher surface area as compared to conventional ZnO nano structure are preferred for the better light scattering. The conductivity and crystallinity of ZnO nano-flowers can be enhanced by annealing in hydrogen atmosphere at 350 oC. The vertical aligned ZnO nano-flowers showed higher haze ratio as compared to the commercially available FTO films. We also observed that the scattering in the longer wavelength region was favored for the high aspect ratio of ZnO nano-flowers. Therefore, we proposed low cost and vertically aligned ZnO nano-flowers for the high performance of thin film solar cells.

• Journal of Powder Materials
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• v.12 no.4 s.51
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• pp.284-290
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• 2005

ZnO nanostructures with various shapes were synthesized under ambient pressure condition by a wet chemical reaction method. Nanorods of ZnO with hexagonal cross-section and their aggregates with radiate shape were synthesized. Precursor concentration affected considerably the shape evolution of ZnO nanorods. Low precursor concentration was proved to be more preferable to the growth of ZnO nanorods, which is attributed to the intrinsic characteristics of chemical reaction in the synthesis of ZnO from zinc compounds.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.313-313
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• 2012

ZnO and $SnO_2$, well-known wide direct band-gap semiconductors, have been considered as the most promising functional materials due to their highly sensitive gas sensing and excellent optical properties. ZnO/$SnO_2$ epitaxial hetrostructure exhibited unique luminescence properties in contrast with individual tetra-pod ZnO and $SnO_2$ nanostructures. Polycrystalline $SnO_2$-based samples $Zn_xSn_{1-x}O_2$(x=0, 0.01, 0.03, 0.05) were prepared by solid state reaction and eco-friendly hydrothermal techniques. Scanning electron microscopy equipped with electron dispersive x-ray spectra confirms the formation of near stoichiometric $Zn_xSn_{1-x}O_2$ nanorods of diameter ~10 nm. X-ray diffraction analysis revealed the rutile structure, except for x=0.07, which may have a small part of $Zn_2SnO_4$ as a secondary phase.