• 한국전기전자재료학회논문지
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• 제20권12호
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• pp.1017-1021
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• 2007

To implement tera bit level non-volatile memories of low power and fast operation, proving statistical reproductivity and satisfying reliabilities at the nano-scale are a key challenge. We fabricate the charge trapping nano scaled SONOS unit memories and 64 bit flash arrays and evaluate reliability and performance of them. In case of the dielectric stack thickness of 4.5 /9.3 /6.5 nm with the channel width and length of 34 nm and 31nm respectively, the device has about 3.5 V threshold voltage shift with write voltage of $10\;{\mu}s$, 15 V and erase voltage of 10 ms, -15 V. And retention and endurance characteristics are above 10 years and $10^5$ cycle, respectively. The device with LDD(Lightly Doped Drain) process shows reduction of short channel effect and GIDL(Gate Induced Drain Leakage) current. Moreover we investigate three different types of flash memory arrays.