• Journal of the Korean Society for Precision Engineering
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• v.33 no.1
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• pp.11-16
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• 2016

Lithography techniques are generally used to manufacture nano-patterns on silicon, however, it is difficult to make a V-shaped pattern using these techniques. Although silicon is a brittle material, it can be treated as a ductile material if mechanically machined at extremely low force scale. The manufacturing technique of nano-patterns on single crystal silicon using a mechanical method was developed in this study. First, the linear pattern was machined on the silicon with increasing thrust force. Then, the correlation between measured cutting force and machined pattern was analyzed. Based on the analysis, the critical thrust force was quantitatively determined, and then the silicon was machined at a force lower than the critical thrust force. The machined pattern was observed using SEM and AFM to check for the occurrence of brittle fractures. Finally, the sharp V-shaped nano-pattern was manufactured on the single crystal silicon.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.11a
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• pp.50-51
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2004.06a
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• pp.46-47
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• 2004

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3437-3440
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• 2010

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2003.10a
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• pp.112-113
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• 2003

• Korean Journal of Materials Research
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• v.18 no.8
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• pp.444-449
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• 2008

Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.

• Advances in nano research
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• v.3 no.1
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• pp.39-47
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• 2015

We study a device structure which can be used to generate pure valley current and valley polarized current using quantum adiabatic pumping. The design of the structure allows the flexibility of changing the structure from one for pure valley current generation to one for valley polarized current generation by changing the applied electric potentials through changing the symmetry of the structure. The device is useful for the development of valleytronic devices.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.146.1-146.1
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• 2008

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3775-3778
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• 2011

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.479-482
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• 2018

Polystyrene superstructure films show faint rainbow color, and this low color saturation limits its wide application. In this paper, polystyrene superstructure films with single bright blue color were prepared by vertical deposition self-assembly method using polystyrene microspheres with average diameter of $310{\pm}10nm$ as raw material. Polystyrene superstructure films were modified by adding nano-carbon powder, and effect of the amount of nano-carbon powde on color performance was studied. The results showed that without addition of nano-carbon powder, the superstructure films showed a faint rainbow color, while with addition of nano-carbon power, the superstructure films exhibited a single bright blue under the same natural light source. Changing the amount of nano-carbon powder addition could adjust color saturation of the film. With increasing the amount of nano-carbon powder addition from 0.008 wt% to 0.01 wt%, color saturation of the superstructure film increased gradually. Further increasing the amount of nano-carbon powder addition to 0.011wt%, color saturation of the superstructure film didn't increase anymore and tended to get dark.