• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.155-159
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• 2003

We report on the annealing effect and ferromagnetic characteristics of Zn$_{0.7}$Mn$_{0.3}$O film prepared by sol-gel method on the silicon (100) substrate using field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry. Magnetic measurements show thatZn$_{0.7}$Mn$_{0.3}$O films exhibit ferromagnetism at 5 K revealing the coercive field of ∼110 Oe for as grown sample and 360, 1035 Oe for samples annealed at 700, 800 $^{\circ}C$, respectively. Our experimental evidence suggests that ferromagnetic precipitates of a manganese oxide may be responsible for the observed ferromagnetic behaviors of the film.he film.

• Resources Recycling
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• v.26 no.1
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• pp.22-29
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• 2017

When the ambient air pressure was $0.1kg/cm^2$, there were few spherically formed droplets, which showed very badly fragmented state. The average particle size of the particles constituting the droplet was about 40 nm. When the air pressure increased to $0.5kg/cm^2$, the ratio of the spherical droplet forms increased, but still showed a state of severe disruption. The average particle size of the particles was reduced to about 35 nm. As the air pressure increased to $3kg/cm^2$, the ratio of spherical droplet form significantly increased, the degree of fragmentation even further decreased and the average particle size decreased to 30 nm. When the air pressure increased from 0.1 to $1kg/cm^2$, the XRD peak intensity showed little change, but the specific surface area was decreased. As the air pressure increased to $3kg/cm^2$, the intensity of XRD peaks showed a little decrease, while the specific surface area increased.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.343-348
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• 2003

Indium tin oxide (ITO) thin films (170 nm) were grown by DC magnetron sputtering deposition on Coming glass substrates without a post annealing. The electrical transport and optical properties of the films have been investigated as a function of deposition temperature $T_{s}$ (10$0^{\circ}C$$\leq$ $T_{s}$$\leq$35$0^{\circ}C$) and oxygen partial pressure $P_{o_{2}}$, (0 $P_{o_{2}}$ $\leq$ 10$^{-5}$ torr). Films were deposited from a high density (99% of theoretical density) ITO target (I $n_2$ $O_3$: Sn $O_2$= 90 wt% : 10 wt%) made of ITO nano powders. With an increase of $T_{s}$ the electrical resistivity p of ITO thin films was found to decrease, but the mobility $\mu$$_{H}$ was found to increase. The carrier density nu shows the maximum value of 6.6$\times$10$^{20}$ /㎤ at $T_{s}$ = 30$0^{\circ}C$. At fixed Is, with an increase of the oxygen partial pressure, $n_{H}$ and $\mu$$_{H}$ were found to decrease, but p was found to increase. The minimum resistivity and maximum mobility values of the ITO films were found to be 0.3 mΩ.cm and 39.3 $\textrm{cm}^2$/V.s, respectively. The visible transmittance of the ITO films was above 80%.. 80%..

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.75-81
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• 2018

The effect of $Ar-N_2$ plasma treatment on Cu surface as one of solutions to realize reliable Cu-Cu wafer bonding was investigated. Structural characteristic of $Ar-N_2$ plasma treated Cu surface were analyzed using X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope. Ar gas was used for a plasma ignition and to activate Cu surface by ion bombardment, and $N_2$ gas was used to protect the Cu surface from contamination such as -O or -OH by forming a passivation layer. The Cu specimen under high Ar partial pressure plasma treatment showed more copper oxide due to the activation on Cu surface, while Cu surface after high $N_2$ gas partial pressure plasma treatment showed less copper oxide due to the formation of Cu-N or Cu-O-N passivation layer. It was confirmed that nitrogen plasma can prohibit Cu-O formation on Cu surface, but nitrogen partial pressure in the $Ar-N_2$ plasma should be optimized for the formation of nitrogen passivation layer on the entire surface of Cu wafer.

• Journal of Powder Materials
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• v.29 no.1
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• pp.47-55
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• 2022

Tungsten carbide is widely used in carbide tools. However, its production process generates a significant number of end-of-life products and by-products. Therefore, it is necessary to develop efficient recycling methods and investigate the remanufacturing of tungsten carbide using recycled materials. Herein, we have recovered 99.9% of the tungsten in cemented carbide hard scrap as tungsten oxide via an alkali leaching process. Subsequently, using the recovered tungsten oxide as a starting material, tungsten carbide has been produced by employing a self-propagating high-temperature synthesis (SHS) method. SHS is advantageous as it reduces the reaction time and is energy-efficient. Tungsten carbide with a carbon content of 6.18 wt % and a particle size of 116 nm has been successfully synthesized by optimizing the SHS process parameters, pulverization, and mixing. In this study, a series of processes for the high-efficiency recycling and quality improvement of tungsten-based materials have been developed.

• The Journal of Korean Academy of Prosthodontics
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• v.54 no.3
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• pp.193-202
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• 2016

Purpose: This study was performed in order to assess the effect of the surface treatment methods and the use of bonding agent on the shear bond strength (SBS) between the aged CAD-CAM (computer aided design-computer aided manufacturing) hybrid materials and added composite resin. Materials and methods: LAVA Ultimate (LU) and VITA ENAMIC (VE) specimens were age treated by submerging in a $37^{\circ}C$ water bath filled with artificial saliva (Xerova solution) for 30 days. The surface was ground with #220 SiC paper then the specimens were divided into 9 groups according to the combination of the surface treatment (no treatment, grinding, air abrasion with aluminum oxide, HF acid) and bonding agents (no bonding, Adper Single Bond 2, Single Bond Universal). Each group had 10 specimens. Specimens were repaired (added) using composite resin (Filtek Z250), then all the specimens were stored for 7 days in room temperature distilled water. SBS was measured and the fractured surfaces were observed with a scanning electron microscope (SEM). One-way ANOVA and Scheffe test were used for statistical analysis (${\alpha}=.05$). Results: Mostly groups with bonding agent treatment showed higher SBS than groups without bonding agent. Among the groups without bonding agent the groups with aluminum oxide treatment showed higher SBS. However there was no significant difference between groups except two subgroups within LU group, which revealed a significant increase of SBS when Single Bond Universal was used on the ground LU specimen. Conclusion: The use of bonding agent when repairing an aged LAVA Ultimate restoration is recommended.

• Journal of the Korean Magnetics Society
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• v.12 no.6
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• pp.231-234
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• 2002

Magnetic properties are investigated for top- and bottom-type spin valves of Si/SiO$_2$/NiO(60nm)/Co(2.5nm)/Cu(1.95nm)/Co(4.5nm)/NOL(t nm; Nano Oxide layer). The MR ratios of the bottom-type spin valves with NOL are larger than those of the top-type spin valves. However, the enhancement of the former is lower than the latter. Both of spin-valves also showed almost constant Ap and smaller p. Enhanced MR ratios of spin valves with NOL result mainly from small values of with constant Ap which due to specular diffusive electron scattering at NOL(NiO)/metal interfaces.

• Korean Chemical Engineering Research
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• v.50 no.4
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• pp.738-742
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• 2012

Here, we develop a new nanofilter device for the rapid and efficient separation of nanoparticles and biomolecules, exploiting the use of AAO mebrane with ordered nanopores in the range from 20 nm to 200 nm. Briefly, the chip comprises of a series of the upper and lower PDMS channels containing embedded inlet and outlet ports, and $50{\mu}m$ width microfluidic channel, and AAO membrane to be made the filtering zone. After assembling these components, the acrylate plastic plates were used to fix the device on the top and bottom side. When introducing the samples into the inlet ports of the upper PDMS channel, we were able to separate and concentrate the nanoparticles and target molecules at the filtering zone, and to elute the solutions containing the unwanted materials toward the lower PDMS channels normal to the direction of AAO membrane. To demonstrate the usefulness of the device we apply it to the SERS detection of nucleic acid sequences associated with Dengue virus serotype 2. We report a limit of detection for Dengue sequences of 300 nM and show excellent enhancement of Raman signals from the filter zone of the nanofilter device.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.163-167
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• 2002

Improved optical switching property of electrochromic nickel hydroxide/nickel glass thin film is reported. Nickel metal film was deposited on glass by e-beam evaporation before following electrochemical redox cycling to form nickel hydroxide for electrochromic activation. Without ITO (indium tin oxide) layer as electrical conductor, this electrode showed more rapid coloration rate than nickel hydroxide film on ITO substrate in the change of the electric voltage and optical transmittance. XPS analysis confirmed the existence of ultra-thin nickel metal layer (${\sim}10{\AA}$) between electrochemically grown nickel hydroxide and the glass substrate. It is concluded that the remained nickel metal nano-layer attribute to the conduction layer and the enhanced response time.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.693-695
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• 2012

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.