• Korean Chemical Engineering Research
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• v.50 no.1
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• pp.50-54
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• 2012

In this study, PANI and PANI/$TiO_2$ composites were prepared as electrode materials for a supercapacitor application. Cyclic voltammetry (CV) was performed to investigate the supercapacity properties of these electrodes in an electrolyte solution of 6 M KOH. The PANI/$TiO_2$ composites were polymerized by amount of various ratios through a simple in-situ method. The morphological properties of composites were analyzed by SEM and TEM method. The crystallinity of the composite and $TiO_2$ particle size were identified using X-ray diffraction (XRD). In the electrochemical test, The electrode containing 10 wt% $TiO_2$ content against aniline units showed the highest specific capacitance (626 $Fg^{-1}$) and delivered a capacitance of 286 $Fg^{-1}$ reversibly at a 100 $mVs^{-1}$ rate. According to the surface morphology, the increased capacitance was related to the fact that nano-sized $TiO_2$ particles (~6.5 nm) were uniformly connected for easy charge transfer and an enhanced surface area for capacitance reaction of $TiO_2$ itself.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.322-326
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• 2011

Etch process of silicon dioxide layer by using capacitively coupled plasma (CCP) is currently being used to manufacture semiconductor devices with nano-scale feature size below 50 nm. In typical CCP plasma etcher system, plasmas are generated by applying the RF power on upper electrode and ion bombardment energy is controlled by applying RF power to the bottom electrode with the Si wafer. In this case, however, etch results often drift due to heating of the electrode during etching process. Therefore, controlling the temperature of the upper electrode is required to obtain improvement of etch repeatability. In this work, we report repeatability improvement during the silicon dioxide etching under extreme process conditions with very high RF power and close gap between upper and bottom electrodes. Under this severe etch condition, it is difficult to obtain reproducible oxide etch results due to drifts in etch rate, critical dimension, profile, and selectivity caused by unexpected problems in the upper electrode. It was found that reproducible etch results of silicon dioxide layer could be obtained by controlling temperature of the upper electrode. Methods of controlling the upper electrode and the correlation with etch repeatability will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.2-188.2
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• 2015

The presence of the conduction interface in epitaxial $LaAlO_3/SrTiO_3$ thin films has opened up challenging applications which can be expanded to next-generation nano-electronics. The metallic conduction path is associated with two adjacent insulating materials. Such device structure is applicable to frequency-dependent impedance spectroscopy. Impedance spectroscopy allows for simultaneous measurement of resistivity and dielectric constants, systematic identification of the underlying electrical origins, and the estimation of the electrical homogeneity in the corresponding electrical origins. Such unique capability is combined with the intentional control on the interface composition composed of $SrTiO_3$ and $CaTiO_3$, which can be denoted by $SrxCa1-_xTiO_3$. The underlying $Sr_xCa1-_xTiO_3$ interface was deposited using pulsed-laser deposition, followed by the epitaxial $LaAlO_3$ thin films. The platinum electrodes were constructed using metal shadow masks, in order to accommodate 2-point electrode configuration. Impedance spectroscopy was performed as the function of the relative ratio of Sr to Ca. The respective impedance spectra were analyzed in terms of the equivalent circuit models. Furthermore, the impedance spectra were monitored as a function of temperature. The ac-based characterization in the 2-dimensional conduction path supplements the dc-based electrical analysis. The artificial manipulation of the interface composition will be discussed towards the electrical application of 2-dimensional materials to the semiconductor devices in replacement for the current Si-based devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.5
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• pp.187-191
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• 2019

Perovskite-type oxides have consistently attracted considerable attention for their applications in high-temperature electrochemical devices, such as electrolytes and electrodes of solid oxide fuel cells, oxygen permeating membranes and sensors etc. Among them, the electrical conductivity of 10 % Sr and 10 % Mg doped $LaAlO_3$ (LSAM9191) was measured using impedance spectroscopy and 4-probe d.c. method. Below $550^{\circ}C$, the grain boundary resistance mostly determined the overall conductivity; however, it nearly disappeared above $800^{\circ}C$. Using the defect model and curve fitting, the ionic and electronic conductivity contributions were also separated. In the temperature region where the sample resistance is mostly determined by the grain volume property, LSAM9191 was an oxygen ion conductor at low $Po_2$ and a mixed conductor at high $Po_2$. With increasing temperature, the ionic conduction region only slightly increased. Thus, LSAM9191 is a promising material as an oxygen ion conductor at high temperature and in low $Po_2$.

• Composites Research
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• v.26 no.5
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• pp.289-294
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• 2013

A thinner is used to improve the multi-walled carbon nano-tube (CNT) and carbon black (CB) dispersion in a polymer matrix and to make a soft electrode. The electrical and mechanical properties of the soft electrodes are investigated as functions of CNT, CB and thinner content. The optimal mixing condition for the electrode is thinner 80, CNT 3.5, CB 18 (phr) on the basis of matrix (KE-12). The specific resistance of that is 73 (${\Omega}{\cdot}cm$), and tensile strength, tensile modulus, and elongation of that is 0.45 MPa, 0.21 MPa, and 184%, respectively. Also, a simple structure of the actuator with an optimized electrode and elastomer is fabricated and its characteristic is evaluated. At the operating voltage 25 kV, the displacement of an elastomer KE-12 is 2.24 mm, and that of an elastomer KE-12 with thinner 50 (phr) is 4.05 mm. It shows a higher displacement compared to that of 3M 4910 which has similar modulus. The actuator made with elastomer and electrode of the same material (KE-12) may have advantages for fatigue life and application.

• Korean Chemical Engineering Research
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• v.62 no.2
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• pp.147-152
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• 2024

Most medical sensors are disposable products. In order to reduce inspection and diagnosis costs, it is more important to develop the inexpensive electrode materials. We fabricated the CuO NPs/PANI/E-PGE as an electrode material for disposable electrochemical sensors and applied it to a non-enzymatic glucose sensor. For surface activation of PGE, pretreatment was performed using chemical and electrochemical methods, respectively. Electrochemical properties according to the pretreatment method were analyzed through chronoamperometry (CA), cyclic voltammetry (CV) and electrochemical impedance (EIS). From these analytical results, the electrochemically pretreated PGE (E-PGE) was finally adopted. The non-enzymatic glucose sensor based on CuO NPs/PANI/E-PGE shows sensitivity of 239.18 mA/mM×cm² (in a linear range of 0.282~2.112 mM) and 36.99 mA/mM×cm² (3.75423~50 mM), detection limit of 17.6 μM and good selectivity. Based on the results of this study, it was confirmed that the modified PGE is a high-performance electrode material. Therefore, these electrodes can be applied to a variety of disposable sensors.