Low-frequency Noise Characteristics of Si0.8Ge0.2 pMOSFET Depending upon Channel Structures and Bias Conditions (채널구조와 바이어스 조건에 따른 Si0.8Ge0.2 pMOSFET의 저주파잡음 특성)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.19 no.1
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- pp.1-6
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- 2006