• Transactions of the Society of Information Storage Systems
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• v.3 no.3
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• pp.118-122
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• 2007

Phase-change wet-etching technology using GeSbTe phase-change films is developed. Selective etching between an amorphous and a crystalline phase can be carried out with an alkaline etchant of NaOH. Etching selectivity is dependent not only on the concentration of the alkaline etchant but also on the film structure. Specifically, metal films for heat control cause marked effects on the etching properties of GeSbTe film. Surviving amorphous pits can be obtained with Al metal layer, however etched amorphous pits are seen with Ag metal layer. An opposite selective etching behavior can be observed between samples with two different metal layers.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.485-486
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• 2011

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.644-647
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• 2001

Amorphous As-Ge-Se-S thin films have been studied with the aim of identifying optimum etching condition which can be used to produce holographic grating structure for use as diffractive optical elements. In this study, holographic gratings have been formed using He-Ne laser(632.8nm), and fabricated by the method of wet etching using NaOH etchant with various concentration(0.26N, 0.33N, 0.40N). The diffraction efficiency was obtained by +1st order intensity of the diffracted beam. The formed grating profiles were observed by atomic force microscope and showed that the expected grating profile could be achieved by controlling the etching time. Over-etching resulted in under-cutting of the grating lines. The highest 1st order diffraction efficiency for these gratings was about 5.05%.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.180-182
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• 2009

Two different wet etching solutions, NaOH 40% and Acid, were used for etching in tri-crystalline Silicon(Tri-Si) solar cell fabrication. The wafers etched in NaOH40% solution showed higher reflectance compared to the wafers etched in Acid solution after $SiN_x$ deposition. In light current-voltage results, the cells etched in Acid solution exhibited higher short circuit current and open circuit voltage than those of the cells etched in NaOH 40% solution. We have obtained 16.70% conversion efficiency in large area($156cm^2$) Tri-Si solar cells etched in Acid solution.

• Journal of Electrochemical Science and Technology
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• v.11 no.1
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• pp.60-67
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• 2020

In this study, copper (II) oxide powder for electroplating was prepared by recovering CuCl₂ from NaClO₃ type etching wastes via recovered non-sintering two step chemical reaction. In case of alkali copper carbonate [mCuCo₃·nCu(OH)₂], first reaction product, CuCo₃ is produced more than Cu(OH)₂ when the reaction molar ratio of sodium carbonate is low, since m is larger than n. As the reaction molar ratio of sodium carbonate increased, m is larger than n and Cu(OH)₂ was produced more than CuCO₃. In the case of m has same values as n, the optimum reaction mole ratio was 1.44 at the reaction temperature of 80℃ based on the theoretical copper content of 57.5 wt. %. The optimum amount of sodium hydroxide was 120 g at 80℃ for production of copper (II) oxide prepared by using basic copper carbonate product of first reaction. At this time, the yield of copper (II) oxide was 96.6 wt.%. Also, the chloride ion concentration was 9.7 mg/L. The properties of produced copper (II) oxide such as mean particle size, dissolution time for sulfuric acid, and repose angle were 19.5 mm, 64 second, and 34.8°, respectively. As a result of the hole filling test, it was found that the copper oxide (II) prepared with 120 g of sodium hydroxide, the optimum amount of basic hydroxide for copper carbonate, has a hole filling of 11.0 mm, which satisfies the general hole filling management range of 15 mm or less.

• 한국태양에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-387
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• 2009

Multi-crystalline silicon surface etching without grain-boundary delineation is a challenging task for the fabrication of high efficiency solar cell. The use of sodium hydroxide - sodium hypochlorite (NaOH40% + NaOCl 12%) solution for texturing multi-crystalline silicon wafer surface in solar cell fabrication line is reported in this article. in light current-voltage results, the cells etched in NaOH 40% + NaOCl 12% = 1:2 exhibited higher short circuit current and open circuit voltage than those of the cells etched in NaOH 40% + NaOCl 12% = 1:1 solution. we have obtained 15.19% conversion efficiency in large area(156cm2) multi-Si solar cells etched in NaOH 40% + NaOCl 12% = 1:1 solution.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.44-56
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• 1997

Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

• Progress in Medical Physics
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• v.2 no.2
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• pp.129-139
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• 1991

The method of etching tracks in PN-3 dosimeter has been applied to tracks of recoil protons from a neutron source. Both the etch and the detection response of PN-3 has been studied as a function of etched-track diameters against various parameters. We could obtain very useful informations about charge, energy, and mass of particles and the relationship between the track etching rate and the track forming procedure in order to analyze the particle recorded in the solid state track detector. The best etching condition could be found by means of changing the etching circumstances for various energies and particles in order to detect the charged particle accurately. It could be influenced widely that the polymer plastic detector could develep the detecting technique for the low energy level neutron and could be used as a neutron dosimeter in the radiation field such as the nuclear power station, the medical institute and the nondtructive testing institute.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.88-91
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• 2005

본 논문에서는 비정질 As-Ge-Se-S 박막의 에칭 레이트를 측정하였으며 As-Ge-Se-S 박막에 회절격자를 형성 시킨 후 선택적 에칭을 통한 엠보싱 홀로그램을 제작하였다. NaOH 수용액으로 0.26N, 0.33N, 0.40N 농도로 변화시키며 수행하였으며 에칭 시간에 따른 에칭되는 두께의 변화를 측정하였다. 에칭 레이트는 NaOH 용액의 농도가 0.26N, 0.33N, 0.40N 일 때 각각 $2.5{\AA}/s$, $3.3{\AA}/s$, $3.9{\AA}/s$ 였다. 또한 2차원 엠보싱 회절격자를 형성 시킨후 0.26N NaOH용액으로 60초간 선택적 에칭을 수행하여 AFM(Atomic Force Microscopy) 으로 측정한 결과 선명한 엠보싱 형태의 회절격자를 확인 할 수 있었다.

• Clean Technology
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• v.9 no.2
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• pp.57-61
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• 2003

A novel nitric acid-free desmut solution has been developed to remove smut, which is produced from a NaOH etching, on the surface of aluminum alloy metal in metal surface treatment processes. Comparing with the performance of 5% $HNO_3$ desmut solution, the mixed acid solution containing 2% $H_2O_2$, 0.5% HF, and 10% $H_2SO_4$ shows the same effect of smut removal for aluminum alloy samples of A16061 and A15052. To examine the surface alterations of the aluminum samples, in addition, the surface analysis is carried out with scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).