• Title/Summary/Keyword: NVRAM

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Energy-Efficient Storage with Flash Device in Wireless Sensor Networks (무선 센서 네트워크에서 플래시 장치를 활용한 에너지 효율적 저장)

  • Park, Jung Kyu;Kim, Jaeho
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.42 no.5
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    • pp.975-981
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    • 2017
  • In this paper, we propose a method for efficient use of energy when using flash device in WSN environment. Typical Flash devices have a drawback to be an energy efficient storage media in the energy-constrained WSNs due to the high standby energy. An energy efficient approach to deploy Flash devices into WSNs is simply turning the Flash device off whenever idle. In this regard, we make the simple but ideal approach realistic by removing these two obstacles by exploiting nonvolatile RAM (NVRAM), which is an emerging memory technology that provides both non-volatility and byte-addressability. Specifically, we make use of NVRAM as an extension of metadata storage to remove the FTL metadata scanning process that mainly incurs the two obstacles. Through the implementation and evaluation in a real system environment, we verify that significant energy savings without sacrificing I/O performance are feasible in WSNs by turning off the Flash device exploiting NVRAM whenever it becomes idle. Experimental results show that the proposed method consumes only about 1.087% energy compared to the conventional storage device.

Design and Implementation of the Flash File System that Maintains Metadata in Non-Volatile RAM (메타데이타를 비휘발성 램에 유지하는 플래시 파일시스템의 설계 및 구현)

  • Doh, In-Hwan;Choi, Jong-Moo;Lee, Dong-Hee;Noh, Sam-H.
    • Journal of KIISE:Computer Systems and Theory
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    • v.35 no.2
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    • pp.94-101
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    • 2008
  • Non-volatile RAM (NVRAM) is a form of next-generation memory that has both characteristics of nonvolatility and byte addressability each of which can be found in nonvolatile storage and RAM, respectively. The advent of NVRAM may possibly bring about drastic changes to the system software landscape. When NVRAM is efficiently exploited in the system software layer, we expect that the system performance can be significantly improved. In this regards, we attempt to develop a new Flash file system, named MiNVFS (Metadata in NVram File System). MiNVFS maintains all the metadata in NVRAM, while storing all file data in Flash memory. In this paper, we present quantitative experimental results that show how much performance gains can be possible by exploiting NVRAM. Compared to YAFFS, a typical Flash file system, we show that MiNVFS requires only minimal time for mounting. MiNVFS outperforms YAFFS by an average of around 400% in terms of the total execution time for the realistic workloads that we considered.

Assessment of the Efficiency of Garbage Collection for the MiNV File System (메타데이타를 비휘발성 램에 유지하는 플래시 파일시스템에서 가비지 컬렉션 수행에 대한 효율성 평가)

  • Doh, In-Hwan;Choi, Jong-Moo;Lee, Dong-Hee;Noh, Sam-H.
    • Journal of KIISE:Computing Practices and Letters
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    • v.14 no.2
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    • pp.241-245
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    • 2008
  • Non-volatile RAM (NVRAM) has both characteristics of nonvolatility and byte addressability. In order to efficiently exploit this NVRAM in the file system layer, we proposed the MiNV (Metadata in NVram) file system in our previous research. MiNV file system maintains all the metadata in NVRAM while storing file data in NAND Flash memory. In this paper, we experimentally analyze the efficiency for the execution of garbage collection in the MiNV file system. Also, we quantify the file system performance gains obtained from efficient garbage collection. Experimental results show that garbage collection on the MiNV file system executes more efficiently that on YAFFS even though these file systems adopt exactly the same garbage collection policy. Specifically, the MiNV file system invokes the aggressive garbage collection mechanism less frequently than YAFFS. Additionally, the MiNV file system postpones the first execution of the aggressive garbage collection mechanism in our experiments. From the experiments, we verify that the efficiency of garbage collection leads to performance improvements of the MiNV file system.

NVRAM Manager and System Service Architecture Design for AUTOSAR-based Automotive Software (AUTOSAR 기반 차량용 소프트웨어를 위한 NVRAM Manager 및 시스템 서비스 구조 설계)

  • Ryu, Hyun-Ki;Cho, Sung-Rae;Jung, Woo-Young
    • Proceedings of the Korean Information Science Society Conference
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    • 2008.06b
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    • pp.437-440
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    • 2008
  • 자동차의 전기/전자 기술 발전과 함께 관련 소프트웨어의 구조 및 복잡성이 날로 증가되고 있으며 이러한 복잡한 구조를 간략화 하여 산업용으로 폭넓게 표준화된 소프트웨어의 인프라를 구축하는 방법이 필요하게 되었다. 이러한 목적에서 AUTOSAR라는 표준 단체가 탄생하게 되었으며 차량용 소프트웨어, 사용자 인터페이스 등의 개발을 위한 차량용 소프트웨어 구조를 정의한다. 본 논문은 AUTOSAR 구조에 기반하여 AUTOSAR 기반 시스템 서비스 및 NVRAM 관리자를 개발하기 위한 표준 구조를 설계 하고자 한다.

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Hardware Platforms for Flash Memory/NVRAM Software Development

  • Nam, Eyee-Hyun;Choi, Ki-Seok;Choi, Jin-Yong;Min, Hang-Jun;Min, Sang-Lyul
    • Journal of Computing Science and Engineering
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    • v.3 no.3
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    • pp.181-194
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    • 2009
  • Flash memory is increasingly being used in a wide range of storage applications because of its low power consumption, low access latency, small form factor, and high shock resistance. However, the current platforms for flash memory software development do not meet the ever-increasing requirements of flash memory applications. This paper presents three different hardware platforms for flash memory/NVRAM (non-volatile RAM) software development that overcome the limitations of the current platforms. The three platforms target different types of host system and provide various features that facilitate the development and verification of flash memory/NVRAM software. In this paper, we also demonstrate the usefulness of the three platforms by implementing three different types of storage system (one for each platform) based on them.

Development of Hybrid Block Storage Consists of NVRAM and DRAM (비휘발성 메모리와 DRAM의 하이브리드 블록 장치 개발)

  • Jeon, taein;Kim, jinsu;Song, seokil;Jeong, yonghwan
    • Proceedings of the Korea Contents Association Conference
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    • 2016.05a
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    • pp.485-486
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    • 2016
  • 이 논문에서는 비휘발성 메모리 (NVRAM)과 DRAM을 결합하여 고속의 신뢰성 있는 하이브리드 블록 스토리지를 개발한다. 기존의 DRAM을 기반으로 하는 리눅스의 RAM 디스크는 고속의 입출력성능을 제공하지만, 시스템 고장이 발행할 경우 모든 데이터를 잃어버리게 된다. 일부에서 DRAM과 하드디스크를 결합하여 시스템 고장에도 안정적으로 데이터를 유지하기 위한 방법이 제안된바 있지만, 입출력 성능이 RAM 디스크에 비해 상당히 저하된다. 이 논문에서는 DRAM, NVRAM, 하드디스크를 결합하여 DRAM의 입출력 성능에 가까우면서 안정적으로 데이터를 저장할수 있는 블록 스토리지를 개발한다.

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Boosting up the Mount Latency of NAND Flash File System using Byte-addressable NVRAM (바이트 접근성을 가지는 비휘발성 메모리 소자를 이용한 낸드 플래시 파일 시스템의 부팅시간 개선 기법)

  • Jeon, Byeong-Gil;Kim, Eun-Ki;Shin, Hyung-Jong;Han, Seok-Hee;Won, Yoo-Jip
    • Journal of KIISE:Computing Practices and Letters
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    • v.14 no.3
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    • pp.256-260
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    • 2008
  • This paper describes an improvement of mount-time delay in NAND Flash file systems. To improve file system mount performance, this work configures a hierarchical storage system with byte-addressable NVRAM and NAND Flash memory, and let the meta data of a file system allocated in the NVRAM. Since the meta data are stored in NVRAM supporting data integrity some of the items, which are stored in Spare area and Object Header area of NAND Flash memory to control meta data of NAND Flash file system, could be eliminated. And also, this work eliminates the scanning operation of the Object Header area of previous work FRASH1.0. The scanning operation is definitely required to find out the empty Object Header address for storing the Object Header data and provokes a certain amount of performance loss in file generation and deletion. In this work, an implemented file system, so-called FRASH1.5, is demonstrated, featuring new data structures and new algorithms. The mount time of FRASH1.5 becomes twice as fast as that of the FRASH1.0. The performance in file generation gets improved by about $3{\sim}8%$. In particular, for most large-size files, the FRASH1.5 has 8 times faster mount time than YAFFS, without any performance loss as seen in the file generation.

Theoretical and Experimental Analysis of Back-Gated SOI MOSFETs and Back-Floating NVRAMs

  • Avci, Uygar;Kumar, Arvind;Tiwari, Sandip
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.1
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    • pp.18-26
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    • 2004
  • Back-gated silicon-on-insulator MOSFET -a threshold-voltage adjustable device-employs a constant back-gate potential to terminate source-drain electric fields and to provide carrier confinement in the channel. This suppresses shortchannel effects of nano-scale and of high drain biases, while allowing a means to threshold voltage control. We report here a theoretical analysis of this geometry to identify its natural length scales, and correlate the theoretical results with experimental device measurements. We also analyze experimental electrical characteristics for misaligned back-gate geometries to evaluate the influence on transport behavior from the device electrostatics due to the structure and position of the back-gate. The backgate structure also operates as a floating-gate nonvolatile memory (NVRAM) when the back-gate is floating. We summarize experimental and theoretical results that show the nano-scale scaling advantages of this structure over the traditional front floating-gate NVRAM.