• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.4
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• pp.53-58
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• 2023

As smartphones increasingly support the execution of various applications, the function of virtual memory swapping is becoming important. However, unlike traditional computer systems, mobile platforms do not basically support swapping. This is because swapping results in frequent writes to flash memory, which may degrade the performance of smartphone's storage significantly. To cope with this situation, this paper suggests two multi-swap architectures, hierarchical swapping and hybrid swapping, and compares their performance quantitatively. Specifically, this paper shows that hybrid swapping with the consideration of single-access data can reduce swapping traffic to flash memory, and improve the performance compared to traditional swapping.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.146-152
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• 2011

Thermal stability of $Ge_2Sb_2Te_5$ (GST) and $SiO_2$ doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at $325^{\circ}C$ for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged. Layer density of GST also steeply decreased from 72.48 to 68.98 $g/cm^2$ and composition was largely varied from Ge : Sb : Te = 22.3 : 22.1 : 55.6 to 24.2 : 22.7 : 53.1, while those of SGST were almost unchanged. It was confirmed that the addition of a small amount of $SiO_2$ into GST film restricted the deterioration of physical and chemical properties of GST film, resulting in the better thermal stability after isothermal annealing.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.20.1-20.1
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• 2011

The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.6
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• pp.65-70
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• 2021

Recently, as the number of mobile apps rapidly increases, the memory size of smartphones keeps increasing. Smartphone memory consists of DRAM and as it is a volatile medium, continuous refresh operations for all cells should be performed to maintain the contents. Thus, the power consumption of memory increases in proportion to the DRAM size of the system. There are attempts to configure the memory system with low-power non-volatile memory instead of DRAM to reduce the power consumption of smartphones. However, non-volatile memory has weaknesses in write operations, so analysis of write behaviors is a prerequisite to realize this in practical systems. In this paper, we extract memory reference traces of mobile apps and analyze their characteristics specially focusing on write operations. The results of this paper will be helpful in the design of memory management systems consisting of non-volatile memory in future smartphones.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.1
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• pp.65-70
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• 2022

As fast storage has become popular, the memory management system designed for hard disks needs to be reconsidered. In this paper, we observe that memory access latency is sensitive to the page size when fast storage is adopted. We find the reason from the TLB miss rate, which has the increased impact on the memory access latency in comparison with the page fault rate, and there is trade-off between the TLB miss rate and the page fault rate as the page size is varied. To handle such situations, we model the page fault rate and the TLB miss rate accurately as a function of the page size. Specifically, we show that the power fit and the exponential fit with two terms are appropriate for fitting the TLB miss rate and the page fault rate, respectively. We validate the effectiveness of our model by comparing the estimated values from the model and real values.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.3
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• pp.93-98
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• 2022

Recently, fast storage media such as Optane have emerged, and memory system configurations designed for disk storage should be reconsidered. In this paper, we analyze the effect of the page size on the memory system performances when fast storage is adopted. Based on this, we design a page size model that can guide an appropriate page size for given workloads in virtualized environments. Configuring different page sizes for various workloads is not an easy matter in traditional systems, but due to the widespread adoption of cloud systems, page sizing performed in our model is feasible for virtual machines, which are generated for executing specific workloads. Simulation experiments under various virtual machine scenarios show that the proposed model improves the memory access time significantly by configuring page sizes for given workloads.

• The Korean Journal of Pesticide Science
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• v.5 no.2
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• pp.45-50
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• 2001

In recent, non virus-induced mosaic symptoms(NVMS) on potato leaves were observed in the seed potato fields, and its incidence rate was $5{\sim}20%$ nationwide. It made difficult to rogue out virus-infected plants, and caused much arguments between seed potato production farmers and seed potato inspectors. The objectives of these experiments were to find out the causes of NVMS, and also to induce mosaic symptom(phytotoxicity) on potato plants by treatment of several herbicides. No significant correlations were found between incidence rates of NVMS and values from soil analyses; soil pH, soil EC, organic matter content, and contents of inorganic constituents($P_2O_5,\;NO_3$, Ca, Mg, K) in the soil around the potato planted. The examinations by ELISA, virus indicator plants, and TEM showed that NVMS on potato leaves was not caused by the viruses infection. But, the use of herbicides could induced the NVMS on potato leaves. The incidence rates of potato treated with pendimethalin linuron of 400 mL/10 a, pendimethalin of 200 mL/10 a, pendimethalin.oxadiazon of 300 mL/10 a, and control were 61.1%, 47.2%, 19.4%, and 1.4%, respectively. Based on these results, we confirmed that the treatment of pendimethalin alone and in mixture with other herbicides were the reason of NVMS on potato leaves. The yields among test plots were similar except dicamba treated plot, which decreased by about 23% compared to control plot. When their progenies harvested in 1999 were planted in the following season, no symptoms of mosaic were observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.