• Progress in Superconductivity
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• v.3 no.1
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• pp.125-129
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• 2001

NiO buffer layers were deposited on texture Ni tapes fur YBCO coated conductors by MOCVD(metal organic chemical vapor deposition) method, using a single solution source. Variables were deposition temperature and flow rate of $0_2$carrier gas. At higher temperatures, The NiO(111) texture was well developed, but the NiO(200) texture was developed at low temperatures. The best result was obtained at the deposition temperature of$ 470^{\circ}C$ and the gas flow rate of 200 sccm. FWHM value of $\omega$-scan fur NiO(200) of the film and $\Phi$-scan for NiO(111) of the film was $4.2^{\circ}$ and $7^{\circ}$, respectively.

• Bulletin of the Korean Chemical Society
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• v.12 no.5
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• pp.574-582
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• 1991

The CO molecules adsorbed on Ni(111) surface is studied in the cluster approximation employing EH method with self-consistent charge iteration. The effect of CO coverage is simulated by allowing the variation of valence state ionization potentials of each Ni atom in model cluster according to the self-consistent charge iteration method. The CO coverage dependent C-O stretching frequency shift, adsorption site conversion, and metal work function change are attributed to the charge transfer between metal surface and adsorbate. For CO/Ni(111) system, net charge transfer from Ni surface to chemisorbed CO molecules makes surface Ni atoms be more positive with increasing coverage, and lowers Ni surface valence band. This leads to a weaker interaction between metal surface valence band and Co $2{\pi}^{\ast}$ MO, less charge transfer to a single CO molecule, and the bule shift of C-O stretching frequency. Further increase of coverage induces the conversion of 3-fold site CO to lower coordination site CO as well as the blue shift of C-O stretching frequency. This whole process is accompanied by the continuous increase of metal work function.

• Resources Recycling
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• v.21 no.5
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• pp.88-92
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• 2012

We tried to measure the fixed quantity of $Ni^{2+}$ion among the metals which were eluted by distilled water from the Fly Ash Leach Liquor(FALL) with a spectrophotometric method. In addition, we researched absorbance values which had different contained quantity of $V^{3+}$ion in contrast with $Ni^{2+}$ion ppm to find out the influence of the $V^{3+}$ion existed in the FALL on the spectrophotometric fixed quantity of $Ni^{2+}$ion. As a result, when $V^{3+}$ ion has below 50% of amount of $Ni^{2+}$ion, the fixed quantity of $Ni^{2+}$ion among the FALL was able to be confirmed by spectrophotometry.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.776-780
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• 2001

$SiO_2$ and polycrystalline Si layers were sequentially grown on (100) Si. NiSi was formed on this substrate from a 20nm Ni layer or a 20nm Ni/5nm Ti bilayer by rapid thermal annealing (RTA) at $300~500^{\circ}C$ to compare thermal stability. In addition, MOS capacitors were fabricated by depositing a 20nm Ni layer on the Poly-Si/$SiO_2$substrate, RTA at $400^{\circ}C$ to form NiSi, $BF_2$ or As implantation and finally drive- in annealing at $500~800^{\circ}C$ to evaluate electrical characteristics. When annealed at $400^{\circ}C$, NiSi made from both a Ni monolayer and a Ni/Ti bilayer showed excellent thermal stability. But NiSi made from a Ni/Ti bilayer was thermally unstable at $500^{\circ}C$. This was attributed to the formation of insignificantly small amount of NiSi due to suppressed Ni diffusion through the Ti layer. PMOS and NMOS capacitors made by using a Ni monolayer and the SADS(silicide as a dopant source) method showed good C-V characteristics, when drive-in annealed at $500^{\circ}C$ for 20sec., and$ 600^{\circ}C$ for 80sec. respectively.

• Journal of Hydrogen and New Energy
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• v.13 no.1
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• pp.13-23
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• 2002

Hydrogenation properties of Mg-Ni and Mg-Ti-Ni alloys were investigated by Pressure-Composition Isotherm (PCI) test. Those alloys were fabricated by a new alloying method, Rotation-Cylinder Method (RCM). The as-cast microstructure of Mg-10 mass% Ni alloy consists of an island-like hydride forming $\alpha$-Mg phase and the eutectic structure. After 350 cyclic tests, Mg-lO mass % Ni alloy was pulverized into fine particles of 100 nm. The fine particles, which have a large specific surface area, are highly reactive with hydrogen. However, extreme pulvehzation can separate Mg from $Mg_2Ni$ in the eutectic structure, so $Mg_2Ni$ of the eutectic structure cannot behave as a dissociated hydrogen supplier.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.201-206
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• 2001

The evolution of textures in Fe-Ni alloy thin films fabricated by PVD using a sputtering method was investigated with parameters such as deposition time and chemical composition. The textures of the as-deposited films were characterized by fibre-type. In Invar alloy(Fe-36.5 wt%Ni) thin film, the <110>//ND fibre texture as a starting component changed to the <210>//ND fibre texture with increasing deposition time. In Permalloy(Fe-81 wt%Ni) thin film, a mixture of the <221>//ND and <311>//ND fibres developed at the early stage of deposition, and then transformed to the <210>//ND fibre with increasing deposition time. These texture changes were discussed in terms of relationship with the microstructural evolution of the films.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.269-274
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• 2003

The electrical, optical and structural properties of ZnNiO thin _ films deposited on Si substrates using rf-magnetron sputtering method have been investigated before and after the thermal annealing processes. The crystallinity of the ZnNiO thin film become degraded with increasing the Ni contents. This is mainly because the lattice of the thin film was expanded due to the oxygen-deficient conditions. Concerning the electrical properties of the thin film, the carrier concentration increases ($6.81\times10^{14}\textrm{cm}^{-2}$) and Hall mobility decreases (36.3 $\textrm{cm}^2$/Vㆍs) with higher doping concentration of Ni. However, the carrier concentration and Hall mobility became low ($1.10\times10^{14}\textrm{cm}^2$ and high (209.6 $\textrm{cm}^2$/Vㆍs), respectively, after the thermal annealing process at $1000 ^{\circ}C$. We also observed a strong luminescene center peaking at 546 nm in photoluminescence spectra, which was caused by a deep level center in the ZnO band gap with oxygen deficient ZnNiO structure.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.615-621
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• 1999

The new process in order to fabricate of Ni catalyst with high activity by the mechanochemical(MC) method which was combined the mechanical alloying(MA) and the chemical treatment process. The microstructure and characterization of mechanically alloyed Ni-5-wt% Al powder and Ni catalyst gained by alkali leaching were investigated byt he various analysis such as XRD, SEM-EDS, HRTEM and laser particle analyzer. The steady state powder with 1~2$\mu\textrm{m}$ mean particle size was obtained after 30hr milling with the PCA of 2 wt% stearic acid under the condition of grinding stainless steel ball to powder ratio of 60:1 and rotating speed fo 300rpm. According to result of HRTEM diffraction pattern, MA powder of the steady state was nanocrystalline $Al_3$$Ni_2$ intermetallic compound. Ni catalyst was obtained after KOH leaching of the steady state powder was about 20nm nanocrystalline which contained about 8 wt % Al.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.218-222
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• 2012

FeNi alloy nanofibers have been prepared by an electrospinning process followed by air-calcination and H2 reduction to develop electromagnetic (EM) wave absorbers in the giga-hertz (GHz) frequency range. The thermal behavior and phase and morphology evolution in the synthetic processes were systematically investigated. Through the heat treatments of calcination and H2 reduction, as-spun PVP/FeNi precursor nanofiber has been stepwise transformed into nickel iron oxide and FeNi phases but the fibrous shape was maintained perfectly. The FeNi alloy nanofiber had the high aspect ratio and the average diameter of approximately 190 nm and primarily composed of FeNi nanocrystals with an average diameter of ~60 nm. The FeNi alloy nanofibers could be used for excellent EM wave absorbing materials in the GHz frequency range because the power loss of the FeNi nanofibers increased up to 20 GHz without a degradation and exhibited the superior EM wave absorption properties compared to commercial FeNi nanoparticles.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.219-219
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• 2010

Silicides have been commonly used in the Si technology due to the compatibility with Si. Recently the silicide has been applied in solar cells [1] and nanoscale interconnects [2]. The modulation of Ni silicide phase is an important issue to satisfy the needs. The excellent electric-conductive nickel monosilicide (NiSi) nanowire has proven the low resistive nanoscale interconnects. Otherwise the Ni disilicide (NiSi2) provides a template to grow a crystalline Si film above it by the little lattice mismatch of 0.4% between Si and NiSi2. We present the formation of Ni silicide phases performed by the single deposition and the co-deposition methods. The co-deposition of Ni and Si provides a stable Ni silicide phase at a reduced processing temperature comparing to the single deposition method. It also discusses the Schottky contact formation between the Ni silicide and the grown crystalline Si film for the solar cell application.