• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.1-8
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• 2007

The DC characteristics of GaAs Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.2
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• pp.51-54
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• 2005

In this work, the attempt has been made to investigate the morphology of self-assembled dipyridinium dithioacetate on Au(111) substrate by Scanning Tunneling Microscopy(STM). Also, we measured electrical properties(I-V) using Scanning Tunneling Spectroscopy(STS). Sample used in this experiment is dipyridinium dithioacetate, which contains thiol functional group, this structure that can be self-assembled easily to Au(111) substrate. The self-assembly procedure was used for two different concentrations, 0.5 mM/ml and 1 mM/ml. Dilute density of sample by 0.5 mM/ml, 1 mM/ml and observed dipyridinium dithioacetate's image by STM after self-assembled on Au(111) substrate. The structure of STM tip-SAMs-Au(111) substrate has been used measurement for electrical properties(I-V) using STS. The current-voltage(I-V) measurement result, observed negative differential resistance(NDR) properties.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1572-1574
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• 2002

In this paper, we discuss the electrical properties of self-assembled (2'-amino-4,4-di(ethynylp henyl)-5'-nitro-1-(thioacetyl)benzene), which has been well known as a conducting molecule having possible application to molecular level NDR device. The phenomenon of negative differential resi(NDR) is characterized by decreasing current th a junction at increasing voltage, also fabricatio MIM-type molecular electronic device and the Molecular Level Using Scanning Tunneling Microscopy.

• KOREAN POULTRY JOURNAL
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• v.12 no.12 s.134
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• pp.98-99
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• 1980

한국의 양계산업 시찰차 방한하여 지난 11월 14일 본회를 내방한 Peter Lewis씨는 영국의 Haper Adoms College 를 졸업하고 동대학에서 닭에 대한 NDP 학위와 토끼에 대한 NDR 학위를 받은 바 있으며 현재 Tetra Poultry 농장의 수출책임자로 있다.

• Journal of the Korean Society of Food Science and Nutrition
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• v.32 no.7
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• pp.1059-1065
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• 2003

Antimicrobial activity of Mokdan bark (Paeonia suffruticosa $A_{NDR}$) was investigated. Methanol extract of dried Mokdan was fractionated to hexane, chloroform, ethylacetate, butanol and aqueous fraction. Ethylacetate fraction among these fractions showed the highest inhibitory effect on the microorganisms such as L. monocytogenes, and E. coli at 500 $\mu\textrm{g}$/disc. Ethylacetate fraction was further fractionated into 3 fractions by silica gel column and thin layer chromatography (TLC). The results showed that ethylacetate fractions No. 1 and 2 had the highest antimicrobial activity. They were mixed again, reseparated, and 3 fractions were obtained. Among them, No. 1 had the highest inhibitory effect on the microorganisms, No. 1 fraction was identified as isobutyl isopentanoate by HPLC, and GC-MS.

• Nuclear industry
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• v.36 no.6
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• pp.51-56
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• 2016

러시아의 흑연감속원자로해체기술센터(NDR 센터)는 2015년 말에 우라늄흑연로인 EI-2의 해체 작업을 성공적으로 마쳤다. DNR 센터의 최고 책임자인 Andrey Izmestyev는 세계 최초로 수행된 이 프로젝트에서 "우리는 많은 기술적, 환경적 어려움을 극복하고 성공적으로 임무를 완수했다"고 말했다.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1730-1733
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• 2004

Device miniaturization and high integrated circuit design is of major interest for the development of electronic devices. Various studies have been conducted to develop new material and processing technique[1]. Negative Differential Resistance(NDR) is the defining behavior in several electronic components, including the Esaki diode and most notably, resonant tunneling diodes(RTD)[2]. We made a comparison of electrical properties between 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene and 4-[2,5-dimethoxy-4-(p henylethynyl)phenyl]ethynylphenylethanethioate, which have been well known as a conducting molecule having possible application to molecular level NDR devices. As a result, we measured current-voltage curves using Scanning Tunneling microscopy(STM), I-V curves also showed several current peaks between negative and positive bias region.

• Progress in Medical Physics
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• v.19 no.2
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• pp.113-119
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• 2008

In this study, we have estimated error of calculation results for 5-type RTP systems and investigated a toleration for error of the RTPs referenced from the evaluation items of AAPM Report-62. For this study, we have introduced the concept of 'normal dose rate(NDR)' and compared the results of experiment and calculation from RTPs at the same reference level. The results from all RTPs were satisfied at various field shapes and heterogeneous phantom materials except the surface irregularity.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.51-57
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• 1995

The theoretical analysis for AlInAs/GaInAs resonant tunneling diodes (RTDs), which have shown the improved negative differential resistance (NDR) characteristics, has scarcely been made in comparison with AlGaAS/GaAs RTDs. In this paper, the static current-voltage relation of Al$_{0.48}In_{0.52}As/Ga_{0.47}In_{0.53}$As RTDs were numerically estimated by using a self-consistent method. Assuming a simplified RTD with single quantum well structure and spacer layers, the peak current density (J$_{P}$) and the peak-to-valley current ratio (PVCR) were analysed as the function of the thickness of the well, the barrier and the spacer layer, and temperature. As the results, the peak current density and the peak-to-valley current ratio indicated a reciprocal relation roughly in respect to the thicknesses of the well and the barrier, and it was theoretically predicted that it be not attainable to provide a high peak current desity (J$_{P}$) over 1${\times}10^{5}A/cm^{2}$ as well as the large peak-to-valley current ratio (PVCR) over 10 that were the the critical conditions for the practical use.

• Progress in Superconductivity and Cryogenics
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• v.16 no.1
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• pp.1-5
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• 2014

We calculated the resonance tunneling energy band in the BCS gap for Type-II superconductor in which periodic potential is generated by external magnetic flux. In this model, penetrating magnetic flux was assumed to be in a fixed lattice state which is not moving by an external force. We observed the existence of two subbands when we used the same parameters as for the $Nd_{1.85}Ce_{0.15}CuO_X$ thin film experiment. The voltages at which the regions of negative differential resistivity (NDR) started after the resonant tunneling ended were in a good agreement with the experimental data in the field region of 1 T - 2.2 T, but not in the high field regions. Discrepancy occurred in the high field region is considered to be caused by that the potential barrier could not be maintained because the current induced by resonant tunneling exceeds the superconducting critical current. In order to have better agreement in the low field region, more concrete designing of the potential rather than a simple square well used in the calculation might be needed. Based on this result, we can predict an occurrence of the electromagnetic radiation of as much difference of energy caused by the 2nd order resonant tunneling in which electrons transit from the 2nd band to the 1st band in the potential wells.