• 한국터널공학회:학술대회논문집
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• 한국터널공학회 2005년도 학술발표회 논문집
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• pp.282-291
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• 2005

사암 및 이암을 기반암으로 하는 산악지역에 건설되는 2-아치 (2-arch) 터널의 거동을 터널설계 단계에서 분석하기 위하여 대규모 실내 모형실험을 실시하였다. 터널이 시공될 예정인 지반과 유사한 지질공학적 특성을 가지는 콘크리트 블록을 이용하여 모형지반을 조성하였다. 모형실험은 중앙터널 (pilot tunnel) 굴착을 포함한 여러 단계의 굴착과정으로 구분하여 실시되었다. 또한 터널 .공용기간 중 터널의 거동을 연구하기 위하여 터널굴착 완료 후 상재하중을 작용시켰다. 실험결과에 의하면 대부분의 지반변위는 중앙터널 굴착에 의해 발생했으며, 그 이후 터널 굴착단계에서의 변위발생은 미미한 것으로 나타났다. 또한 대부분의 지중변위는 0.25D 이내의 범위에서 발생하였다. 여기서 D 는 터널의 폭이다. 한편 실험결과를 분석하여 경암에 시공되는 2-아치 터널의 중앙벽체(centre pillar)에 작용하는 하중에 대한 경험적인 공식을 제시하였다. 터널시공 완료 후 공용기간 중 상재하중이 작용할 경우 그 크기에 따라서는 터널굴착에 의해 발생한 것보다 더 큰 지중변위가 발생할 수 있는 것으로 분석되었다. 터널의 거동은 중앙벽체의 강성에 큰 영향을 받는 것으로 나타나 이를 터널설계에 반영하여 중앙벽체의 강성을 증가시켰다. 현재 터널시공을 위한 사전작업이 진행 중에 있으며, 터널의 굴착은 2005년 하반기에 실시될 예정이다.

• 한국재료학회지
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• 제32권6호
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• pp.293-300
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• 2022

This study investigated a graded-refractive-index (GRIN) coating pattern capable of improving the light extraction efficiency of GaN light-emitting diodes (LEDs). The planar LEDs had total internal reflection thanks to the large difference in refractive index between the LED semiconductor and the surrounding medium (air). The main goal of this paper was to reduce the trapped light inside the LED by controlling the refractive index using various compositions of (TiO₂)_x(SiO₂)_1-x in GRIN LEDs consisting of five dielectric layers. Several types of multilayer LEDs were simulated and it was determined the transmittance value of the LEDs with many layers was greater than the LEDs with less layers. Then, the specific ranges of incident angles of the individual layers which depend on the refractive index were evaluated. According to theoretical calculations, the light extraction efficiency (LEE) of the five-layer GRIN is 25.29 %, 28.54 % and 30.22 %, respectively. Consequently, the five-layer GRIN LEDs patterned enhancement outcome LEE over the reference planar LEDs. The results suggest the increased light extraction efficiency is related to the loss of Fresnel transmission and the release of the light mode trapped inside the LED chip by the graded-refractive-index.

• 천문학회보
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• 제45권1호
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• pp.51.1-51.1
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• 2020

The Rosette Nebula is the most actively star-forming region in the Monoceros OB2 association. This region hosts more than three stellar groups, including the most populous group NGC 2244 at the center of the region and the smaller stellar groups around the border of the H II bubble. To trace their formation process, we investigate the kinematic properties of these groups using the Gaia astrometric data and high-resolution spectra taken from observation with Hectochelle on MMT. The proper motions of stars in NGC 2244 show a pattern of radial expansion. The signature of cluster rotation is also detected from their radial velocities. On the other hand, the small groups appear to be physically associated with some clouds at the ridge of the H II region. Among them, the group near the eastern pillar-like gas structure shows the signature of feedback-driven star formation. In this presentation, we will further discuss the formation process and dynamical evolution of the stellar groups in the Rosette Nebula, based on the observation and results of N-body simulations.

• Bulletin of the Korean Chemical Society
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• 제34권12호
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• pp.3749-3754
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• 2013

Two 3D isomorphous and isostructural complexes, namely, $[Zn(BDOA)(bpy)(H_2O)_2]_n$ (1) and $[Cd(BDOA)-(bpy)(H_2O)_2]_n$ (2); (BDOA = Benzene-1,4-dioxyacetic acid, bpy = 4,4'-bipyridine) were synthesized under hydrothermal conditions and characterized by means of elemental analyses, thermogravimetric (TG), infrared spectrometry, and single crystal X-ray diffraction. Complexes 1 and 2 crystallize in the triclinic system, space group P-1 and each metal ion in the complexes are six-coordinated with the same coordination environment. In the as-synthesized complexes, $BDOA^{2-}$ anions link central metal ions to form a 1D zigzag chain $[-BDOA^{2-}-Zn(Cd)-BDOA^{2-}-Zn(Cd)-]_{\infty}$, whereas bpy pillars connect metal ions to generate a 1D linear chain $[-bpy-Zn(Cd)-bpy-Zn(Cd)-]_{\infty}$. Both infinite chains are interweaved into 2D grid-like layers which are further constructed into a 3D open framework, where hydrogen bonds play as the bridges between the adjacent 2D layers. Luminescent properties of complex 1 showed selectivity for $Hg^{2+}$ ion.

• Carbon letters
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• 제4권1호
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• pp.1-9
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• 2003

Recently, the control of pore-characteristics of nano-porous materials has been studied extensively because of their unique applications, which includes size-selective separation, gas adsorption/storage, heterogeneous catalysis, etc. The most widely adopted techniques for controlling pore characteristics include the utilization of pillar effect by metal oxide and of templates such as zeolites. More recently, coordination polymers constructed by transition metal ions and bridging organic ligands have afforded new types of nano-porous materials, porous metal-organic framework(porous MOF), with high degree and uniformity of porosity. The pore characteristics of these porous MOFs can be designed by controlling the coordination number and geometry of selected metal, e.g transition metal and rare-earth metal, and the size, rigidity, and coordination site of ligand. The synthesis of porous MOF by the assembly of metal ions with di-, tri-, and poly-topic N-bound organic linkers such as 4,4'-bipyridine(BPY) or multidentate linkers such as carboxylates, which allow for the formation of more rigid frameworks due to their ability to aggregate metal ions into M-O-C cluster, have been reported. Other porous MOF from co-ligand system or the ligand with both C-O and C-N type linkage can afford to control the shape and size of pores. Furthermore, for the rigidity and thermal stability of porous MOF, ring-type ligand such as porphyrin derivatives and ligands with ability of secondary bonding such as hydrogen and ionic bonding have been studied.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• 한국토양비료학회지
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• 제32권1호
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• pp.39-46
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• 1999

Fly ash를 이용(利用)한 zeolite성(性) 물질(物質)의 열수합성(熱水合成)에 있어서 반응재료(反應材料)의 초기구성성분(初期構成成分) 비율(比率)과 여러가지 반응조건(反應條件)이 반응생성물(反應生成物)의 CEC및 결정화도(結晶化度)에 미치는 영향(影響)과 최적반응조건(最適反應條件)을 조사(調査)하였다. $SiO_2/Al_2O_3$ 비율(比率)이 2.55이상(以上)에서는 Na-P1 zeolite가 생성(生成)되었으나, 2.25이하(以下)에서는 hydroxy sodalite가 생성(生成)되었다. 3N-NaOH, $SiO_2/Al_2O_3$ 비율(比率) 2.55, $Na_2O/Al_2O_3$ 비율(比率) 2.0, $103^{\circ}C$에서 12시간(時間) 처리(處理)한 반응생성물(反應生成物)의 CEC 가 $285cmol^+kg^{-1}$으로 다른 반응조건(反應條件)의 생성물(生成物)보다 높았으며, 결정화도(結晶化度)는 2N-NaOH, $SiO_2/Al_2O_3$ 비율(比率) 2.55 $Na_2O/Al_2O_3$ 비율(比率) 2.0, $103^{\circ}C$에서 12시간(時間) 처리(處理)한 반응생성물(反應生成物)이 45.1%로서 가장 높게 나타났다. 반응생성물(反應生成物)의 $SiO_2/Al_2O_3$ 비율(比率)은 fly ash 보다 낮았으며, ignition loss는 결품격자(結品格子) 내(內)의 흡착수(吸着水)에 의해 4.0%로 증가(增加)하였다. 반응생성물(反應生成物)의 XRD peak와 전자현미경사진(電子顯微鏡寫眞)으로 관찰(觀察)한 결과(結果) Na-P1 zeolite의 특징(特徵)을 나타내었다. Fly ash를 이용(利用)한 Na-P1 zeolite의 최적(最適) 열수합성조건(熱水合成條件)은 NaOH 농도(濃度) 2~3N, $SiO_2/Al_2O_3$, 2.55, $Na_2O/Al_2O_3$ 비율(比率) 1.5~2.0, 반응온도(反應溫度) $80{\sim}103^{\circ}C$, 반응시간(反應時間)은 12시간(時間) 이상(以上)으로 판단(判斷)된다.

• Radiation Oncology Journal
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• 제8권2호
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• pp.189-198
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• 1990

저자들은 1980년 1월부터 1980년 12월까지 원자력병원 치료방사선과에서 방사선 치료를 받은 66명의 구강인두 편평상피 종양 환자들을 대상으로 한 후향적 분석을 통하여 다음과 같이 결과를 얻었다. 구강인두 종양의 원발 부위별 환자분포를 보면 편도부위 종양이 42예로 가장 많았고 연구개 종양이 12예, 구강저 종양이 9예 그리고 측인두 및 후인두벽 종양이 3예순이었다. 구강인두 부위에 침범한 병소들을 총체적으로 분석한 경우 원발병소의 병기에 따른 국소관해율은 T1과 T2 그리고 T3와 T4 병기에서 각각 80%와 77% 그리고 73%와 40%였고 전체적으로 70%의 국소관해율를 보였다. 국소관해율은 원발병소의 병기가 낮을수록, 또한 원발부위로 볼때 연구개부위 종양에서, 그리고 분화도상에 미분화된 세포를 가진 경우에 가장 높았다. 국소적 임파선의 병기에 따른 국소임파관해율은 N1과 N2 그리고 N3 병기에서 각각 96%와 63% 그리고 40%였으며 전체적으로 70%의 국소임파관해율를 보였다. 원발병소의 병기에 따른 5년 생존율은 T1과 T2에서 73%, T3와 T4에서 46%였다(p<0.05). 또한, 편도부위에 생긴 종양의 경우 5년 생존율은 주위조직으로의 침범이 없는 군이 있는 군보다 통계적인 유의차로 높았다(p<0.01). 결론적으로 볼때 방사선 요법이 해부학적 형태 유지 및 기능적인 보존측면에서 구강인두 종양에 대한 일차적인 치료방법으로서 효과적인 것으로 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.418-418
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• 2008

The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.

• 한국지반환경공학회 논문집
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• 제21권7호
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• pp.5-16
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• 2020

현재 경주지진 및 포항지진 발생으로 내진설계기준이 강화되어 기존 시설물에 대한 내진성능평가를 실시하고 있다. 기존 시설물의 피해를 최소화하면서 국한된 협소한 장소에서 시공이 가능한 마이크로파일공법을 개선하여 지진 시 내진성능효과를 확보하고자 한다. 개선방법은 주 기둥인 연직말뚝 주변에 우산형태로 경사말뚝을 시공하여 말뚝 상부의 사각접시형 플레이트에서 말뚝을 모두 일체화하는 것이다. 본 논문에서는 수치해석으로 사질토지반에서 다양한 지진파에 대해 우산형 마이크로파일의 수평변위 거동을 분석하였다. 수치해석 결과, 지반이 연약할수록 우산형 마이크로파일의 수평저항력의 효과가 우수하였다. 경사말뚝의 근입심도에 따른 분석결과, 동일한 지반강도에서 근입심도가 15m 이상일 경우에 수평변위 저감 효과가 뚜렷했으며, N치 30 이상의 지반에 정착하면 지진 시에 효과가 있는 것으로 확인되었다. 마이크로파일의 근입심도와 수평변위 억제효과가 비례하였으며, 대체적으로 지반이 약할수록 변위억제 효과가 컸다. 우산형 마이크로파일은 수직말뚝이 모멘트에 대한 저항을 하고, 경사말뚝이 축력에 대한 저항을 하는 복합저항효과가 있었다.