• 센서학회지
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• 제31권1호
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• pp.31-35
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• 2022

The efficacy improvement of the light emitting diode (LED) was studied for the realization of small-size, low power consumption, and highly sensitive bio-sensor instrument. The performance of the LED with Mg delta-doping at the interface of AlGaN/GaN super-lattice in p type cladding layer was simulated. The device with Mg delta-doping showed improved current, radiative recombination rate, electroluminescence, and light output power compared to the conventional LED structure. Under the bias condition of 5 V, the improved device exhibited 20.8% increase in the light output power. This is attributed to the increment of hole concentration from stable ionization of Mg in p type cladding layer. This result is expected to be used for the miniaturization, power saving, and sensitivity improvement of the bio-sensor system.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.37-41
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• 2010

The authors investigated the photoluminescence (PL) and the electron paramagnetic resonance (EPR) from an magnesium (Mg)-doped GaN thin film with a delta-doped layer. The regularly doped sample shows a PL peak at 2.776 eV for the as-grown sample, and the peak shifts to 2.904 eV and increases in intensity for the annealed sample. The delta-doped sample also shows the same PL peak as does the regularly doped sample. However, only the annealed delta-doped layer shows a sharp EPR with a small isotropic Lande g-factor, $g_{II}$, of 2.029. This resonance is attributed to the delta-doped layer, which forms a hole-bound Mg-N atomic structure instead of the $Mg_{Ga}-V_N$ defect complex, indicating that the delta-doped sample was not optically activated to form PL centers but was instead electrically activated to form a hole-bound state.

• 반도체디스플레이기술학회지
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• 제23권3호
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• pp.29-34
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• 2024

We investigated the n-type δ-doping activation of the tunneling junctions of Si nanolayers for silicon tandem cell applications. The thin film growth of pn junction with the inclusion of phosphorus monolayer was performed by plasma-enhanced chemical vapor deposition with the implement on 6-inch wafers of p-Si microtextured substrates. The rapid thermal annealing processes with various temperatures were performed to activate the δ-doped layer. The activation was confirmed by the electron spin resonance with Lande factor g=2.006085 for the delocalized conduction electron from the phosphorus δ-doped layer at the magnetic field of 3357.5 Gauss. The tunneling junction shows the Ohmic character at the low voltage and the Schottky character at the high voltage bias.

• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.1-5
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• 2005

Electon spin resonance measurements have been performed on the Mg-doped wurtzite GaN thin films grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition. The sample set included films as-grown with the regular Mg doped and Mg delta doped samples and the corresponding annealed ones. The resonance signal has been observed from the annealed Mg delta-doped sample with the Lande g value of 2.029. This indicates that the singlet resonance signal originates from the neutral Mg acceptor located at 0.24 eV above the valence band edge and 0.13 eV above the Fermi level because of the nuclear hyperfine spin 1=0 of Mg and the larger value than the free electron g=2.0023.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.209.2-209.2
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• 2013

We proposed and fabricated zinc oxide thin-film transistors (TFTs) employing 4-mercaptophenol (4MP) doped ZnO by atomic layer deposition (ALD) that results in highly stable and high performance. The 4MP concentration in ZnO films were varied from 1.7% to 5.6% by controlling Zn:4MP pulses. The n-type carrier concentrations in ZnO thin films were controlled from $1.017{\times}10^{20}/cm^3$ to $2.903{\times}10^{17}/cm^3$ with appropriate amount of 4MP doping. The 4.8% 4MP doped ZnO TFT revealed good device mobility performance of 8.4 $cm^2/Vs$ and the on/off current ratio of 106. Such 4MP doped ZnO TFTs exhibited relatively good stability (${\Delta}V_{th}$: 2.4 V) under positive bias-temperature stress while the TFTs with only ZnO showed a 4.3 ${\Delta}V_{th}$ shift, respectively.

• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• 한국진공학회지
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• 제2권2호
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• pp.181-187
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• 1993

Si 이방성 에칭 용액인 EPW(Ethylenediamine, Pyrocatechol, Water) 용액내에서 potentiostat를 이용한 cyclic polarization 방법으로 양극 산화막의 연구를 수행하였다. p-Si 및 n-Si에서 양극 산화막의 breakdown potential은 동일한 값을 보였으며, $p^+$-Si의 경우에는 양극 산화막의 breakdown이 일어나지 않았다. 산화막의 XPS 분석결과 n-Si과 p-Si의 경우 Si 2p photopeak의 chemical shift는 각각 ${\Delta}$3.62eV, ${\Delta}$3.55eV였으며, $p^+$-Si의 경우에는 ${\Delta}$4.25eV였다. 따라서 $p^+$-Si의 양극 산화막이 light doping의 경우와 비교하여 커다란 에칭 저항성을 보이는 것은 산화막의 화학적 조성차이에 기인하는 것이라 생각된다. $p^+$-Si이 에칭 용액내에서 anodic bias 상태에 농이게 되면 boron이 표면으로 diffuse-out되는 것을 SIMS 분석을 통해 알 수 있었는데, 그 원인은 아직 분명하지는 않지만, 이것은 실제 etch-stop이 일어나는 임계 boron 농도가 일반적으로 알려진 값보다 훨씬 높을 것이라는 것을 시사한다.