• Title/Summary/Keyword: N-Oxide

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Electricial properties of oxynitride films prepared by furnace oxidation in $N_2O$ ($N_2O$ 가스에서 형성된 oxynitride막의 전기적 특성)

  • Bae, Sung-Sig;Seo, Yong-Jin;Kim, Tae-Hyung;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.90-93
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    • 1992
  • In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an $N_2O$ ambient have been studied. Compared with the oxides grown in $O_2$, $N_2O$ oxides show significantly improved breakdown field and low flat band voltage. Also, $N_2O$ oxide is more controllable for ultrathin film growth than $O_2$ oxide. This improvement is caused by nitrogen incorporation into the $N_2O$ oxide. Therefore, the nitrogen-rich-layer at the Si/$SiO_2$ interface formed during $N_2O$ oxidation not only strengthen $N_2O$ oxide structure at the interface and improves the gate dielectric quality, it also acts as a oxidant diffusion barrier that reduces the oxidation rate significantly.

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Chromatographic Determination of the Absolute Configuration in Sanjoinine A That Increases Nitric Oxide Production

  • Soohyun Um;Hyeongju Jeong;Joon Soo An;Se Jin Jo;Young Ran Kim;Dong-Chan Oh;Kyuho Moon
    • Biomolecules & Therapeutics
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    • v.31 no.5
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    • pp.566-572
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    • 2023
  • A chiral derivatization strategy with phenylglycine methyl ester (PGME) was employed to develop a straightforward method to determine the absolute configurations of N,N-dimethyl amino acids. The PGME derivatives were analyzed using liquid chromatography-mass spectrometry to identify the absolute configurations of various N,N-dimethyl amino acids based on their elution time and order. The established method was applied to assign the absolute configuration of the N,N-dimethyl phenylalanine in sanjoinine A (4), a cyclopeptide alkaloid isolated from Zizyphi Spinosi Semen widely used as herbal medicine for insomnia. Sanjoinine A displayed production of nitric oxide (NO) in LPS-activated RAW 264.7 cells.

A Study on the Fluxless Bonding of Si-wafer/Solder/Glass Substrate (Si 웨이퍼/솔더/유리기판의 무플럭스 접합에 관한 연구)

  • ;;;N.N. Ekere
    • Journal of Welding and Joining
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    • v.19 no.3
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    • pp.305-310
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    • 2001
  • UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

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Effect of Pt Layers on the Photoelectrochemical Properties and Stability of a Copper Oxide/n-Si Electrode (Copper oxide/n-Si 전극의 광전기화학 변환 특성과 안정성에 미치는 Pt 층의 영향)

  • 윤기현;홍석건;강동헌
    • Journal of the Korean Ceramic Society
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    • v.37 no.3
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    • pp.263-270
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    • 2000
  • The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

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Analysis of Diethylcarbamazine and Diethylcarbamazine-N-oxide by Gas Chromatography

  • Lee, Suk-Hyang;M.S;Pharm.D
    • Archives of Pharmacal Research
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    • v.19 no.6
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    • pp.475-479
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    • 1996
  • Diethylcarbamazine (DEC, 1-diethylcarbamyl-4-methylpiperazine) is an antiparasitic piperazine derivative used in the treatment of lymphatic filariasis caused by Wuchereria bancrofti, Brugia malayi or grugia timori. DEC-N-oxide is a major metabolite in humans and has antifilarial activity. In carrying out pharmacokinetic studies, gas chromatographic analysis of DEC in plasma can be complicated by the presence of the metabolite, since the thermally unstable DEC-N-oxide is converted back to a material which coelutes with DEC under the conditions of the analysis. We now report a method to separate DEC-N-oxide from DEC in plasma using solid phase extraction with subsequent gas chromatographic analysis using a nitrogen specific detector. One-diethylcarbamyl-4-ethylpiperazine (E-DEC) was the internal standard. The standard curve of DEC was linear in the range of 10 to 200 ng/ml as described by Y=0.0350+0.0128X, $R^2=0.999$. The limit of quantitation was 4 ng/mL. Reproducibility at 10, 100 and 200 ng/mL concentration points of the standard curve gave coefficient variations of 6.1%, 7.8% and 1.6%, respectively. The recovery following solid phase extraction was 99.3% for DEC and 94.8% for the internal standard. This sensitive and specific analytical method is suitable for pharmacokinetic studies of DEC.

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Assessing Heavy Metals for Estrogenicity Using a Combination of In vitro and In vivo Assays (In vitro 및 In vivo Assay를 통한 중금속의 에스트로겐성 평가)

  • Park, Chul;Kim, So-Jung;Shin, Wan-Chul;Kim, Hae-Gyoung;Choe, Suck-Young
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.33 no.9
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    • pp.1486-1491
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    • 2004
  • The estrogenicities of six heavy metal compounds, which contaminate frequently in foods, were assayed using a combination of in vitro and in vivo assays. The assays were 1) estrogen receptor dependent transcriptional expression assay, 2) E-screen assay and, 3) the uterotropic assay in mice. The chemicals studied were 17$\beta$ -estradiol, diethylstilbestrol (DES), arsenic oxide, bis(tri-n-butyltin), cadmium chloride, chromium chloride, lead acetate, and mercuric chloride. Using the estrogen receptor dependent transcriptional expression assay, the following estrogenicity ranking was measured: bis(tri-n-butyltin) > cadmium chloride > chromium chloride >> mercuric chloride >lead acetate = arsenic oxide. Using E-screen test, the following estrogenicity ranking was measured: bis(tri-n-butyltin) > cadmium chloride > chromium chloride >> mercuric chloride > lead acetate = arsenic oxide. Results from the uterotropic assay showed that bis(tri-n-butyltin), cadmium chloride, chromium chloride caused an increase in uterine wet weight, while lead acetate, mercuric chloride, and arsenic oxide failed to do so. Bis(tri-n-butyltin), cadmium chloride and chromium chloride showed the highest estrogenicity in three assay systems. Recent studies suggesting that bis(tri-n-butyltin), cadmium chloride have estrogenicities are compatible with the present finding. Furthermore, our study is suggesting that chromium chloride may be estrogenic. The results demonstrate that this three level-assay combination (transcriptional activation, cell proliferation, and an in vivo effect in an estrogen-responsive tissue) could serve as a useful method to assess the estrogenicity of heavy metals.

Annealing Effect on the Electrical Characteristics for Oxide Semiconductor ITO_{(n)}/Si_{(p)}$ Solar Cell (산화물 반도체 ITO_{(n)}/Si_{(p)}$ 태양전지의 전기적 특성에 미치는 열처리 효과)

  • 김용운
    • Journal of the Korean Society of Safety
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    • v.18 no.3
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    • pp.64-68
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    • 2003
  • ITO_{(n)}/Si_{(p)}$ solar cell is fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The maximum output of fabricated solar cell is obtained when the composition of the thin film is consisted of indium oxide 91[mole %] and tin oxide 9(mole %). The solar cell electrical charateristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min].

Ozonolyses of Cycloalkenes: Trapping of Carbonyl Oxide by Trifluoroacetophenone

  • 이주연;이치원;허태성
    • Bulletin of the Korean Chemical Society
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    • v.19 no.11
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    • pp.1244-1248
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    • 1998
  • Ozonolysis reactions of cyclic olefins 1a-c and norbomene In in the presence of trifluoroactophenone 6 provided the corresponding cross-ozonides 7a-c and 7n. Further reactions of ozonides 7a-c and 7n with the independently prepared carbonyl oxide 11 gave diozonides of structure l0a-c and 10n. The ozonolysis of 1methylcyclopentene 12a and 1-methylcyclohexene 12b in the presence of trifluoroactophenone 6 provided exclusively ozonide 15 and 16 derived from capture of carbonyl oxide 13. All of the new ozonides have been isolated as pure substances and characterized by their 1H NMR and 13C NMR spectra.

Performance and SILC Characteristics of Flash Memory Cell With Ultra thin $N_2O$ Annealed Tunneling Oxide (초박막의 $N_2O$ 어닐링한 터널링 산화막을 갖는 Flash Memory Cell의 SILC 특성 및 성능)

  • Son, Jong-Hyoung;Chong, Jong-Wha
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.10
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    • pp.1-8
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    • 1999
  • In this paper, we have studies the transport mechanism and origin of SILC for the various thickness of wet oxide. Also, SILC characteristics of $N_2O$ annealed oxide was included in this study. We made the flash memory cell with $N_2O$ annealed oxide of 60Athick under $0.25{\mu}m$ design rule, and measured the characteristics of the cell. As a result, we have found that the origin of SILC is due to the trap formed inside of the oxide layer by electrical stress. And we reached the conclusion that the transport mechanism of SILC is ruled by the modified F-N tunneling if the electric field is lower than 8MV/cm or typical F-N tunneling if the electric field is higher than 8MV/cm. We could also confirm the fact that $N_2O$ annealed oxide of 60Athick have an improved resistance effect against SILC. In case that we apply $N_2O$ annealed oxide of 60Athick to the flash memory, we could confirm $10^6$ times endurance and more than 10 years drain disturb, and could get 8V programmable flash memory characteristics.

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