• Journal of Korean Society for Atmospheric Environment
• /
• v.12 no.4
• /
• pp.495-504
• /
• 1996

The concentrations of dimethylsulfide (DMS) were determined from both seawater and the overlying atmosphere from a station located in the Masan Bay area during a ten-day field campaign period of January 1996. The resulting data were also used to derive saturation ratios (SR) as well as sea-to-air fluxes of DMS. The concentrations and fluxes of DMS for both reservoirs varied extensively over two to three orders of magnitude: DMS in air and seawater were measured at 9 to 4,300 pptv (mean: 600 $\pm$ 1, 170, N=18) and at 0.24 to 10 nM (4.0 $\pm$ 3.4, N=13), respectively, while its fluxes were found from 0.02 to 23 mol $m^{-2} day^{-1} (3.1 \pm 6.8, N=11)$. A comparative analysis between our data and previously reported ones indicate that its atmospheric concentrations are abnormalously high, but its seawater counterparts are slightly lower than expected. In light of high pollution levels of organic-rich materials in and the associated high biological productivity of the study area, the sea-to-air-fluxes derived are notably low relative to those values typically reported from the coastal areas. These complicated features of DMS distributions/fluxes in the study site indicate that the near-by port- based anthropogenic activities from various industrial plants strongly interfere with natural processes leading to the production and release of DMS. It was however striking to find out relatively strong signals of diel cycle in its saturation ratios, concentration gradients between seawater and atmosphere, and the associated fluxes. Although it is yet difficult to provide meaningful explanations for the observed phenomena, the existence of clear diel cycle in some DMS-related parameters suggests that the natural processes may nonetheless exert important controls on the regional cycling of atmospheric sulfur species, of particular DMS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1991.10a
• /
• pp.44-47
• /
• 1991

Electron injection and memory retention chracteristics of the MNOS devices with thin oxide layer of 23${\AA}$ thick and silicon nitride layer of 1000${\AA}$ thick which are fabricated for this experiment. As a result, pulse amplitude increase oxide current is dominated in linearly increasing region of $\Delta$V$\_$FB/the decreasing region after saturation was due to the increased silicon nirtide current. In low pulse ampiltude $\Delta$V$\_$FB/ is not variated on temperature, but as temperature and pulse amplitude increase. $\Delta$V$\_$FB/ is decreased after saturation. And the decay rate during 10$^4$sec after electron injection was ohiefly dominated by the back tunneling of emission from memory trap to silicon. Memory retention characteristics in V$\_$FB/ stage was better than that of OV retention regardless of injection conditions.

• Progress in Superconductivity and Cryogenics
• /
• v.3 no.2
• /
• pp.77-83
• /
• 2001

The thermal characteristics of solid nitrogen are investigated by experiment and analysis for the purpose of evaluating its feasibility as a cooling medium for HTS (high T$_{c}$ superconductor) magnets. A cryostat to refrigerate a liquid-nitrogen container well below its freezing temperature with a 2-stage GM cryocooler is designed and constructed. The spatial distribution of temperature is measure as a function of time during the freezing and melting processes. from which the thermal diffusivity of solid nitrogen can be approximately calculated. the freezing process is formulated and solved by the integral method with an assumption of phase equilibrium at the solid-liquid interface and experimental observation. It may be concluded that the thermal diffusion in solid phase is much slower than in liquid and the degree of super-saturation is quite severe in the solidification of nitrogen.n.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.2
• /
• pp.77-79
• /
• 1992

We propose a self-aligned and double recessed technique for GaAs power MESFETs application. The gate length and the wide recess width are defined by a selective removal of the SiN layer using reactive ion etching(RIE) while the depth of the channel is defined by chemical etching of GaAs layers. The threshold voltages and the saturation drain voltage could be sucessfully controlled using this technique. The lateral-etched distance increases with the dry etching time and the source-drain breakdown voltage of MESFET increases up to about 30V at a pinch-off condition. The electrical characteristics of a MESFET with a gate length of 2 x10S0-6Tm and a source-gate spacing of 33 x10S0-6Tm show maximum transconductance of 120 mS/mm and saturation drain current density of 170-190mA/mm at a gate voltage of 0.8V.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.7
• /
• pp.358-363
• /
• 2004

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

• Proceedings of the Korean Magnestics Society Conference
• /
• 1991.05a
• /
• pp.73-74
• /
• 1991

The films with ferromagnetic fine particles dispersed in nonmagnetic matrix, such as $Fe-Al_2O_3$ and Fe-Cu have been studied for use of magnetic recording medium, optically device and sensor. Their magnetic properties depend strongly on structural parameter such as size and volume fraction of ferromagnetic particles. Fe-Cr-Ni alloy sputtered films also have microstructure with ferromagnetic -- b.c.c phase and nonmagnetic f.c.c phase grains. Magnetic properties of these films depend strongly on such a unique structure. These are depend on the ratio in volume of ferromagnetic particles to nonmagnetic ones $V_F/V_N$, the saturation magnetization Ms increased with increase of $V_F/V_N$. The coercivity Hc of the as-deposited films took maximum value of about 200 Oe at adequate $V_F/V_N$ and then Ms and Squareness S were 500 emu/cc and 0.5, respectively.(omitted)

• Journal of the Korean Society for Heat Treatment
• /
• v.23 no.6
• /
• pp.331-337
• /
• 2010

Aluminum nitride (AlN) thin films containing various amounts of Co content have been deposited by using a two-facing targets type sputtering (TFTS) system. The deposited films were also annealed successively and isothermally at different temperatures. Annealing treatment can control the physical properties as well as the microstructure of AlN films with Co particles. High magnetization and high resistivity are obtainable in AlN films containing dispersed Co particles. The coercivity of the films does not depend on annealing time, but it increases with increasing annealing temperature due to the increase of the grain size. A high saturation magnetization of 46 kG and resistivity of 2200 ${\mu}{\Omega}$-cm was obtained for AlN films containing 25 at% Co.

• Journal of Korean Ophthalmic Optics Society
• /
• v.5 no.2
• /
• pp.151-155
• /
• 2000

We calculated a refractive index of the lens surface by measuring a spectral reflectance for a tinted time on manufacturing of the color lens. The longer a tinted time, the larger a reflectance and reflective index. The refractive index increased for a time up to the colorant's saturation state on the lens surface. The refractive index's change curve of blue color lens for a time depended on the Boltzmann growth curve. then we obtained the parameter's values of $n_{min}=1.482$, $n_{max}=1.497$, $t_c=11.53$ and $d_0=2.287$.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.107-108
• /
• 2006

The effect of WC or NbC addition on various properties of Ti(C0.7N0.3)-Ni cermets was investigated. The microstructure oj Ti(C0.7N0.3)-xWC-20Ni showed a typical core/rim structure, irrespective of the WC content, whereas the structure oj Ti(C0.7N0.3)-xNbC-20Ni was different and was dependent on the NbC content. The hardness (HV) and the fracture toughness (KIC) had a tendency to increase marginally, while the coercive force (HC) and the magnetic saturation $(4{\pi}{\sigma})$ decreased gradually with an increase in WC or NbC content in the systems studied. In addition, increasing WC content in Ti(C0.7N0.3)-xWC-20Ni system, decarburization was retarded, while denitrification was accelerated

• Current Photovoltaic Research
• /
• v.3 no.4
• /
• pp.107-111
• /
• 2015

Current characteristic curve of an illuminated solar cell was used to determine its reverse saturation current density ($J_0$), ideality factor (n) and resistances, by using numerical diode simulation. High efficiency amorphous silicon, heterojunction crystalline Si (HIT), plastic and organic-inorganic halide perovskite solar cell shows n=3.27 for a-Si and n=2.14 for improved HIT cell as high and low n respectively, while the perovskite and plastic cells show n=2.56 and 2.57 respectively. The $J_0$ of these cells remain within $7.1{\times}10^{-7}$ and $1.79{\times}10^{-8}A/cm^2$ for poorer HIT and improved perovskite solar cell respectively.