• Horticultural Science & Technology
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• v.33 no.6
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• pp.845-853
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• 2015

The objective of this study was to predict the timing of nitrogen (N) demand through analyzing chlorophyll fluorescence (ChlF), soil-plant analysis development (SPAD), and normalized difference vegetation index (NDVI), which are positively correlated with foliar N concentration in star cluster (Pentas lanceolata). The plants were grown in potting soil under optimal conditions for 30 d, followed by weekly irrigation with five concentrations (0, 4, 8, 16, and 24 mM) of N for an additional 30 d. These five N application levels corresponded to leaf N concentrations of 2.62, 3.48, 4.00, 4.23, and 4.69%, respectively. We measured 13 morphological and physiological parameters, as well as the responses of these parameters to various N-fertilizer treatments. The general increases in Dickson's quality index (DQI), above-ground dry weight (DW), total DW, flowering rate, ${\Delta}F/Fm$', and qP in response to treatment with 0 to 8 mM N were similar to those of SPAD, NDVI, and Fv/Fm. Consistent and strong correlations ($R^2$= 0.60 to 0.85) were observed between leaf N concentration (%) and SPAD, NDVI, ${\Delta}F/Fm$', and above-ground DW. Validation of leaf S PAD, NDVI, and ${\Delta}F/Fm$' revealed that these vegetation indices are accurate predictors of leaf N concentration that can be used for non-destructive estimation of the proper timing for N-solution irrigation of P. lanceolata. Moreover, irrigation with 8 mM N-fertilizer i s recommended w hen leaf N concentration, SPAD, NVDI, and ${\Delta}F/Fm$' ratios are reduced from their saturation values of 4.00, 50.68, 0.64, and 0.137%, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

• Journal of the Korean Ceramic Society
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• v.29 no.12
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• pp.942-948
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• 1992

Ultrafine iron oxide powder, {{{{ gamma }}-Fe2O3 and $\alpha$-Fe2O3, were prepared by the thermal decomposition of organometallic compounds. The formation process of powder includes the thermal decomposition and oxidation of the organometallic precursors, Fe(N2H3COO)2(N2H4)2 (A) and N2H5Fe(N2H3COO)3.H2O (B). The organometallic precursors, A and B, were synthesized by the reaction of ferrous ion with hydrazinocarboxylic acid, and characterized by quantitative analysis and infrared spectroscopy. The mechanistic study for the thermal decomposition was performed by DAT-TG. The iron oxide powder was obtained by the heat treatment of the precursors at 20$0^{\circ}C$ and $600^{\circ}C$ for half an hour in air. The phases of the resulting product were proved {{{{ gamma }}-Fe2O3 and $\alpha$-Fe2O3 respectively. The particle shape was equiaxial and the particle size was less than 0.1 ${\mu}{\textrm}{m}$. Magnetic properties of the {{{{ gamma }}-Fe2O3 powder obtained from A and B was 234 Oe of coercivity, 64.26 emu/g of saturation magnetization, 23.59 emu/g of remanent magnetization and 24.1 Oe, 47.27 emu/g, 3.118 emu/g respectively. The value of $\alpha$-Fe2O3 powder was 1.494 Oe, 0.4862 emu/g, 0.1832 emu/g and 1,276 Oe, 0.4854 emu/g, 0.1856 emu/g respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.99.2-99.2
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• 2012

현재 양산 중인 대부분의 결정질 실리콘 태양전지는 p-type 실리콘 기판의 전면에 인 (phosphorus) 을 확산시켜 에미터로 사용한 스크린 프린티드 태양전지 (Screen Printed Solar Cells) 이다. 위 태양전지의 단점은 p-type 기판의 광열화현상 (Light Induced Degradation) 문제와 후면 알루미늄 금속 전극으로 인한 휨 현상 등이 있다. 이러한 단점을 해결하기 위해 n-type 기판의 전면에 보론 (Boron) 을 도핑하여 에미터로 사용하고, 후면 전계 (Back Surface Field) 로 인 (Phosphorus)을 도핑한 태양전지에 대한 연구가 활발히 진행 중이다. 본 연구에서는, 튜브 전기로 (tube furnace) 를 이용해 n-type 실리콘 웨이퍼 전면에 보론 도핑을 하고 이와 마찬가지로 웨이퍼 후면에 인 도핑을 실시하였다. 그리고 전면과 후면의 패시베이션을 위해 얇게 산화막을 형성한 후 실리콘 질화막 (SiNx) 을 증착하였다. 에미터와 후면 전계 그리고 패시베이션 층의 특성을 평가하기 위해 QSSPC (Quasi-Steady-State PhotoConductance) 로 소수반송자 수명 (Minority Carrier Lifetime) 과 포화 전류 (Saturation current) 값을 측정하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1190-1195
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• 2003

In this paper, it is shown how a robot with n passive trailers can be controlled in backward direction. When driving backward direction, a kinematic model of the system is represented highly nonlinear equations. The problem is formulated as a trajectory following problem, rather than control of independent generalized coordinates. Also, the state and input saturation problems are formulated as a trajectory generation problem. The trajectory is traced by a rear hinge point of the last trailer, and reference trajectories include line segments, circular shapes and rectangular turns. Experimental verifications were carried out with the PSR-2(public service robot $2^{nd}$ version) with three passive trailers. Experimental result showed that the backward motion control can be successfully carried out using the proposed control scheme.

• Journal of the Korean Magnetic Resonance Society
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• v.1 no.2
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• pp.103-111
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• 1997

Proper pulse sequences and experimental optimization for the 3D 15N edited TOCSY and NOESY spectra were described. Using sensitivity enhancement approach with coherent selection by pulsed field gradients described by Kay and co-workers, an considerable gain in sensitivity was achieved. The sensitivity was also improved by minimal water saturation using water flip-back pulse. Among the three types of TOCSY mixing pulse, named MLEV-17, DIPSI-2rc, DIPSI-2rc sequence gave the most sensitive spectrum. These results suggest an appropriate pulse sequence for for those 3D experiments for large proteins.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.282-282
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• 2013

The antimony sulfide ($Sb_2S_3$) thin films were deposited using the gas phase method which known as atomic layer deposition (ALD) on mesoporous micro-films. Tris (dimethylamido) antimony (III[$(Me_2N)_3Sb$] and hydrogensulfide ($H_2S$) were used as precursors to deposit $Sb_2S_3$. Self-terminating nature of $(Me_2N)_3Sb$ and $H_2S$ reaction were demonstrated by growth rate saturation versus precursors dosing time. Absorption spectra and extinction coefficient were investigated by UV-VIS spectroscopy. Scanning electron microscopic analysis and X-ray photoelectron spectroscopy (XPS) depth profile were employed to determine the conformal deposition.

• Nuclear Engineering and Technology
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• v.30 no.1
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• pp.40-46
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• 1998

A set of experiments using a 1/10 scale model pump which was manufactured to simulate performance of reactor coolant pump(RCP) of Y.G.N # 3 and 4, was executed in single phase(at atmospheric pressure and room temperature) and near-saturation(300 ~ 600kPa). The pump characteristics in single phase flow was similar to the characteristics of the RCP. The pump characteristic curves at nearly saturated state were correlated in terms of flow coefficient and head coefficient for subcooled temperature using the cavitation number defined as (equation omitted), which can be predicted the cavitation possibility. The pump behavior around the saturated temperature almost consists with single phase behavior until the cavitation occurs(When cavitation occurs. When the flow coefficient is about 0.12), the pump head rapidly degrades. In this situation, subcooled temperature is about 1.8~8$^{\circ}C$ and cavitation number of model pump is 1.0 ~ 1.7.