• 한국물환경학회지
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• 제22권1호
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• pp.74-82
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• 2006

In this study, development of M2-Dephanox and M3-Dephanox process has been tried to enhance the nitrogen removal of M-Dephanox process on the basis of previous study about M-Dephanox. The results showed that T-N removal efficiency of M3-Dephanox process was 8.9% or 11.3% higher than M-Dephanox or M2-Dephanox processes, respectively. This result is due to the lower $NO_3{^-}-N$ concentration in the effluent of M3-Dephanox than of M-Dephanox and M2-Dephanox processes. This results were recurrenced by PASS simulator. As result of simulation by PASS program, effluent $NO_3{^-}-N$ concentration of M3-Dephanox process was 1.4 mg/L and 3.6 mg/L lower than M-Dephanox and M2-Dephanox processes. In the study about optimization of M3-Dephanox processes by PASS program, SRT greatly affected T-N removal of M3-Dephanox process, whereas, the recycle rate and recirculation rate did little affect T-N removal efficiency of M3-Dephanox. In the study about optimization of reactors following the nitrification reactor of M3-Dephanox process, it was shown that the best optimum volume ratio of denitrification reactor, intermittently aerated reactor and anoxic reactor for the T-N removal were 29.1(%) : 32.7(%) : 38.2(%). T-N removal efficiency at this volume ratio was similar to T-N removal efficiency at the volume ratio of 36.3(%) : 36.3(%) : 27.4(%) designed for the lab-scale M3-Dephanox.

• 대한전자공학회논문지
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• 제18권4호
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• pp.49-61
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• 1981

N+P, N+PP+ 형 태양전지를 제조하여 얻은 실험자료들을 근거로 실리콘 접합형 태양전지에 일반적으로 적용할 수 있는 컴퓨터 모의 실험 프로그램을 개발하고, 이의 유용성을 확인하였다. 이 모의 실험 프로그램은 N+P, P+N, N+PP+, P+NN+형의 실리콘 태양전지에 적용할 수 있는 것으로, 입사광은 AMI, 등강도 광원, 인공조명으로 많이 사용되는 GE -ELH 광원이고, AR코팅은 Si3N4형과 투과도가 파장에 관계없는 일정형 2종류가 있으며, 프로그램에서 이들 전지의 구조, 광원, AR 코팅 종류에 대한 파장 특성분포도 쉽게 변화시킬 수 있도록 되어 있다. 이 모의실험의 결과들을 토대로 N+와 P 영역에서의 평균도오핑농도와 전지의 두께, AMI 스펙트럼에 대한 집광도, 앞면 접합깊이에 대하여 효율이 최대가 되는 최적치들을 구하였으며, 앞면의 표면 재결합 속도, 접합부에서의 캐리어의 유효 수명, 누설저항에 대하여는 허용 한계치로, 기타 효율변화인자로서 동작온도 직렬저항과 전기장의 세기에 대하여는 효율의 변화율로서 파라미터들이 효율에 미치는 영향들을 분석하였다.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.662-666
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• 2005

Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

• 전자공학회논문지A
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• 제28A권1호
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• pp.30-39
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• 1991

The influence of physical parameters (Al mole fraction, thickness, doping concentration) in the window and emitter on the efficiency characteristics of heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs solar cell is investigated. The maximum efficiency theoretically calculated in this device is obtained when a thickness of the window is in a range of (400-1000))$\AA$and a thickness/doping concentration of the emitter is in a range of (0.5-0.8)$\mu$m/(1-7)${\times}10^{17}cm^{-3}$, respectively. Also is the efficiency improved according to the increase of Al mole fraction in the indirect gap window(0.41${\le}x{\le}1.0$). The optimum designed heteroface cell with an area of 0.165cm$^2$fabricated using MOCVD exhibits an active area conversion efficiency of 17%, having a short circuit current density of 21.2mA/cm\ulcorner an open circuit voltage of 0.94V, and a fill factor of 0.75 under ELH-100mW/cm$^2$illumination.

• 상하수도학회지
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• 제31권4호
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• pp.297-301
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• 2017

Wastewater treatment using ferrate (VI) solution is becoming a promising technology for several years, because it is high efficient and harmless technology. In this study, the ferrate (VI) solution was tested to treatment of desulfurization wastewater. The effluent from desulfurization wastewater treatment process of power plant was used as raw water, and the COD and T-N removal efficiency of ferrate(VI) solution were investigated. In the test, as the injection rate increased from 0.1 to 1.0%, the removal efficiency of COD also slightly increased, about 80% of COD were removed in 1.0% of injection rate. In the case of T-N, about 50% of T-N was removed in the condition of 1.0% of injection rate. The removal efficiency of COD and T-N also affected by reaction time, maximum removal efficiency was shown in 30 min of treatment. From these results, the wastewater treatment with ferrate(VI) solution can be great solutions for treatment of non-biodegradable pollutants in wastewater, especially for the 3rd treatment of wastewater.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.586-589
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• 2002

The Ultra Violet(UV) emission characteristics of Neon + Nitrogen gas-mixture discharge was investigated in AC plasma display panel. The firing voltage of Ne+$N_2$ gas-mixture discharge increased with increasing nitrogen concentration. The UV intensity emitted from the gas discharge also increased with increasing nitrogen concentration. The UV efficiency increase with increasing $N_2$ partial pressure at low $N_2$ concentration, and then UV efficiency is saturated at high $N_2$ concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.

• 한국유기농업학회지
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• 제20권3호
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• pp.357-368
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• 2012

탄질비가 다른 유기자재 시용이 토양중 무기태질소의 시기별 변화와 수수${\times}$수단그라스 교잡종의 질소이용률에 미치는 영향을 조사하기 위해서 2009년부터 2011년까지 수행되었다. 처리구는 질소함량 210kg/ha 수준으로 축분퇴비, 알팔파, 유박, 포함하였다. 유박은 가장 낮은 탄질비를 나타내었고, 축분퇴비는 3년 동안 가장 낮은 질소의 무기화가 관찰되었다. 토양 무기성분과 수수${\times}$수단그라스 교잡종의 건물중은 처리에 따라 일관성 있게 영향을 받지 않았고, 건물중은 재배기간인 5월부터 9월까지의 강수량과 부의 상관관계를 나타내었다. 화학비료는 2009년과 2010년에 질소이용률을 크게 증가시켰고, 축분퇴비는 3년간 가장 낮은 질소이용률을 보였다. 6월부터 8월까지의 강수량 증가는 퇴비로 처리된 수수${\times}$수단그라스 교잡종의 질소이용률을 다소 증가시켰으나 양분의 무기화가 빠른 화학비료는 반대의 양상이 관찰되었다. 본 시험에서는 유기자재의 탄질비 보다는 강수량의 변동이 클 때 작물의 건물중과 질소이용률에 영향을 끼치므로 이를 고려하여 밭토양에 시비를 해야 할 것으로 판단되었다.

• Journal of Information Display
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• 제9권2호
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• pp.14-17
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• 2008

A charge trapping host structure was developed to improve the light-emitting efficiency of green phosphorescent organic light-emitting diodes. N, N'-dicarbazolyl-3,5-benzene(mCP) and a spirobifluorene based triplet host(PHl) were co-deposited as hosts in the emitting layer and the device performance was examined according to the composition mCP and PH1. The results showed that the quantum efficiency could be improved by 30 % using a mixed host of mCP and PH1.

• Communications for Statistical Applications and Methods
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• 제20권1호
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• pp.77-84
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• 2013

This paper deals with the relative efficiency of two kernel estimators $\hat{f}_n$ and $\hat{g}_n$ by using spherical data, as proposed by Park (2012), and Bai et al. (1988), respectively. For this, we suggest the computing flows for the relative efficiency on the 2-dimensional unit sphere. An evaluation procedure between two estimators (given the same kernels) is also illustrated through the observed data on normals to the orbital planes of long-period comets.