• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.256-259
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• 1996

$(Sr_{1-x}{\cdot}Ca_x)TiO_3+yNb_2O_5$($0.05{\leq}x{\leq}0.2$, 0.004$1350[^{\circ}C]$ in a reducing atmosphere($N_2$ gas). Dielectric propertries were investigated with contents of $Nb_2O_5$. The grain size and dielectric constant increase with increase $Nb_2O_5$, but decrease in $Nb_2O_5$ exceed($Nb_2O_5=0.6[mol%]$). Also, the temperature characteristics of the dielectric loss factor exhibited a stable value within 0.5[%]. The capacitance characteristics appeals a stab]e value in ${\pm}10[%]$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.172-175
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• 2003

We have investigated effects of the lattice mismatch between the LPE films and the substrates. We have grown $La_{2-x}Sr_{x}CuO_{4}$(x=0.1 to 0.15) single crystalline films on single crystalline substrates having different lattice parameter ratio c/a e.g., $La_{2-x}Sr_{x}Cu_{1-y}Zn_{y}O_{4},\;La_{2-x}Ba_{x}CuO_{4},\; LaSrAlO_{4}\;and\;La_{2-x}Sr_{x}Cu_{1-y}Al_{y}O_{4}$ etc., using the IR-LPE technique. The superconducting properties of the grown films were found to vary significantly depending on the lattice mismatch with different substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.133-138
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• 2021

Ternary Ti-X-N coatings, where X = Al, Si, Cr, O, etc., have been widely used for machining tools and cutting tools such as inserts, end-mills, and etc. Ti-Al-N-O coatings were deposited onto silicon wafer and WC-Co substrates by a cathodic arc evaporation (CAE) technique at various negative substrate bias voltages. In this study, the influence of substrate bias voltages during deposition on the microstructure and mechanical properties of Ti-Al-N-O coatings were systematically investigated to optimize the CAE deposition condition. Based on results from various analyses, the Ti-Al-N-O coatings prepared at substrate bias voltage of -80 V in the process exhibited excellent mechanical properties with a higher compressive residual stress. The Ti-Al-N-O (-80 V) coating exhibited the highest hardness around 30 GPa and elastic modulus around 303 GPa. The improvement of mechanical properties with optimized bias voltage of -80 V can be explained with the diminution of macroparticles, film densification and residual stress induced by ion bombardment effect. However, the increasing bias voltage above -80 V caused reduction in film deposition rate in the Ti-Al-N-O coatings due to re-sputtering and ion bombardment phenomenon.

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.1
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• pp.55-61
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• 2006

신규 $Nb_2Zr_6O_{17-x}N_x$ 광촉매를 고상합성법처리(solid state synthesis) 후 암모니아가스($NH_3$)에 의한 기상처리법(ammonolysis)으로 합성하였다. 합성된 신규 광촉매 및 이를 다시 Pt 및 $RuO_2$를 도핑 하여 $H_2S$를 광분해하여 수소를 발생 실험을 수행하였다. 이 신규 oxynitrid계 광촉매는 가시광하에서 $H_2S$를 광분해하여 수소를 발생하는(Quantum yield = 13.5 %) 우수한 광촉매 활성을 보여주었다.

• Bulletin of the Korean Mathematical Society
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• v.41 no.1
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• pp.27-43
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• 2004

Let he(x) and $h_{o}(x)$ denote the limits of the sequences $\{^{2n}x\}\;and\;\{^{2n+1}x\}$, respectively. Asymptotic formulas for the functions E\$h_e\;and\;h_o$ at the points $e^{-e}$ and 0 are established.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.108.2-108
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• 2003

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.42-42
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• 2007

무독성 원소로 조성된 Ti-30Ta-xZr(x=3, 7, 10, 15) 합금을 제조하여, HA박막과 금속사이의 계면이 생기는 문제점을 개선하기 위해 합금 표면에 HA/TiN 및 HA/ZrN 이중층을 형성시킨 후 전기화학적 방법으로 코팅의 영향을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.129-133
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• 1994

$ZnO_{x}$ films were deposited by conventional thermal evaporation method. Zinc acetate was used as precursor. XRD and SEM results shows films as mixed stats of ZnO and zinc acetate. And EDX measurements reseal composition of films as $ZnO_{x}$.

• Journal of applied mathematics & informatics
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• v.15 no.1_2
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• pp.457-466
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• 2004

Let{$X_{ni}$\mid$\;1\;{\leq}\;i\;{\leq}\;k_n,\;n\;{\geq}\;1$} be an array of rowwise negatively associated random variables such that $P$\mid$X_{ni}$\mid$\;>\;x)\;=\;O(1)P($\mid$X$\mid$\;>\;x)$ for all $x\;{\geq}\;0,\;and\; \{k_n\}\;and\;\{r_n\}$ be two sequences such that $r_n\;{\geq}\;b_1n^r,\;k_n\;{\leq}\;b_2n^k$ for some $b_1,\;b_2,\;r,\;k\;>\;0$. Then it is shown that $\frac{1}{r_n}\;max_1$\mid${\Sigma_{i=1}}^j\;X_{ni}$\mid$\;{\rightarrow}\;0$ completely convergence and the strong convergence for weighted sums of N A arrays is also considered.