• Korean Journal of Crystallography
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• v.6 no.1
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• pp.27-35
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• 1995

The crystal structure of 1-tert-butoxycarbonyl-4-[N-(tert-butoxycarbonyl)-N-(ethoxycarbonylmethyl)amino]-3-phenylsulfonylpyrrolidind [C24H36O8N2S] has been from single crystal x-ray diffraction study ; C24H36O8N2S triclinic, p1, a=11.363(8)Å, b=11.589(6)Å, c=11.013(10)Å,α=95.32(6)°,β=98.64(7)°,γ=79.57(5)°,V=1406.8(18)Å3, t=293K, Z=2, CuKα(λ=1.5418Å). The molecular structure was solved by diredt method and refined by full-matrix least squares to a final R=9.78% for 3621 unique observed [F≥4σ(F)] reflections and 703 paramenters.

• Journal of the Korean Ceramic Society
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• v.28 no.2
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• pp.130-140
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• 1991

The powders of the system Si3N4-Y2O3-AlN were prepared using Si(OC2H5)4 and YCl3.6H2O together with commercial AlN powder. $\alpha$-Si3N4 was prepared by the carbothermal reduction and nitridation of the hydrolyzed gel at 135$0^{\circ}C$ for 10h in N2 atmosphere. YCl3.6H2O was observed to be changed to Y2O3 during the reaction. $\alpha$-Sialon(X=0.2, 0.4, 0.6) ceramics were obtained by hot-pressing the Si3N4-Y2O3-AlN mixture at 178$0^{\circ}C$ for 1h under 30 MPa. The content of $\alpha$-Sialon increased with increasing metal solubility(x value) and $\alpha$-Sialon single phase was obtained at the metal solubility of 0.6. With increasing metal solubility, flexural strength, fracture toughness and thermal shock resistence were decreased, while the microhardness was increased. Large elongated $\beta$-Si3N4 grains were mainly observed at lower metal solubility. Mechanical prorerties of the sintered ceramics with X=0.2 were measured as follows : flexural strength ; 650 MPa, fracture toughness ; 3.63 MN/m3/2, hardness ; 14.7 GPa, thermal shock resistence temperature ; 58$0^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.30 no.5
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• pp.441-448
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• 1986

Dioxobis(sub.-salicylaldiminato) molybdenum (VI) complexes, $MoO_2\;(X-sal-N-R)_2,\;(X=H,\;5-CH_3,\;R=C_6H_5,\;p-F-C_6H_4,\;m-Cl-C_6H_4,p-I-C_6H_4\;and\;p-C_2H_5-C_6H_4)$, have been prepared by reactions of dioxobis(sub.-salicylaldehydato) molybdenum (VI), $MoO_2(X-sal)_2$ with primary amines, in which $MoO_2(X-sal)_2$ complexes were obtained by acidification of a mixture solution of ammonium paramolybdate in water and appropriate salicylaldehyde in methanol. All these complexes show two strong Mo=O stretching imodes in the 900-940$cm^{-1}$ and p.m.r. spectra exhibited only one signal for the azomethine group. These results confirmed that the complexes are six-coordinated octahedron with a $cis-MoO_2$ group and the geometrical configurations of the complexes possess a C2 axis of symmetry. From the mass analyses of the complexes, it found that the composition ratios of $MoO_2$ : ligand are 1 : 2. The charge transfer transition corresponding to N-Mo, and O-Mo occured at 29,000$cm^{-1}$ and 32,000$cm^{-1}$ respectively. Where, the complexes were found to be non-ionic materials by conductivity measurements in dimethylformamide.

• Journal of the Korean Magnetics Society
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• v.4 no.4
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• pp.335-339
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• 1994

The crystallograpic and magnetic properties of $Eu(Fe_{1-x}In_{x})O_{3}$ (x=0, 0.03과 0.05) have been studied by the methods of X-ray diffraction, $M\"{o}ssbauer$ spectroscopy, and magnetic hysteresis measurement at room temperature. The X-ray results show that the samples have a crystal structure of orthorhombic and unit cell volume of the crystal with the exception of the sample of x=0 increases as increasing the In concentration. In the analysis assuming two sets of six-line of $M\"{o}ssbauer$ spectra, it is found that the magnetic hyperfine field in each of sets decreases increasing x. The linewidth of the absorption lines for the samples increased as increasing x. This implies that the data involve a sum of several hyperfine patterns which have intensity being proportional to $_{n}P_{z}(x)$, the probability of an environment with z such Fe neighbors. The magnetic hysteresis curves show decrease of $M_{s}$ and increase of $H_{c}$ of the samples with increasing x.

• Journal of the Korean Mathematical Society
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• v.54 no.4
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• pp.1301-1316
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• 2017

It is well known that every $x{\in}(0,1]$ can be expanded to an infinite $L{\ddot{u}}roth$ series with the form of $$x={\frac{1}{d_1(x)}}+{\cdots}+{\frac{1}{d_1(x)(d_1(x)-1){\cdots}d_{n-1}(x)(d_{n-1}(x)-1)d_n(x)}}+{{\cdots}}$$, where $d_n(x){\geq}2$ for all $n{\geq}1$. In this paper, the set of points with some restrictions on the digits in $L{\ddot{u}}roth$ series expansions are considered. Namely, the Hausdorff dimension of following the set $$F_{\phi}=\{x{\in}(0,1]\;:\;d_n(x){\geq}{\phi}(n),\;i.o.n}$$ is determined, where ${\phi}$ is an integer-valued function defined on ${\mathbb{N}}$, and ${\phi}(n){\rightarrow}{\infty}$ as $n{\rightarrow}{\infty}$.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.47-51
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• 2013

Current research trends of solar cells has focused on the high conversion efficiency and low-cost production technology. Passivation technology that can be easily adapted to mass production. Therefore, this study conducted experiments with aim of the following two methods for the fabrication of high-efficiency crystalline silicon solar cells. In the first task, an attempt is formation of local Al-BSF to a number of locally doped dots to increase the conversion efficiency of solar cells to reduce the loss of $V_{oc}$ overcome. The second major task, rear surface apply in $Al_2O_3/SiN_x$ stack layer, $Al_2O_3$ prominent negative fixed charge characteristics. As the result of task, Local Al-BSF and $Al_2O_3/SiN_x$ stack layer applied to the p-type single crystalline silicon solar cells, the average $V_{oc}$ of 644mV, $I_{sc}$ of 918mV and conversion efficiency of 18.70% were obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.242.2-242.2
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• 2013

최근 산화물 반도체 박막 트랜지스터의 신뢰성(reliability) 평가에 대한 연구가 활발히 이루어지고 있다. 신뢰성 평가하는 한 방법으로 게이트에 바이어스를 지속적으로 인가하여 소자의 문턱 전압의 변화를 통해 안정성(stability)를 확인한다. 전압을 지속적으로 인가하게 되면 소자를 열화시켜 전기적 특성이 약화된다. 본 연구에선 ITZO 박막 트랜지스터의 신뢰성 평가를 위해 게이트 절연막($SiO_2$, $SiN_x$)에 따른 ITZO 소자를 제작 및 게이트 바이어스 스트레스 후 전기적 특성을 비교, 분석하였다. 제작된 소자의 게이트에 전압을 +15V로 7200초 동안 인가하였다. 스트레스 후 게이트 절연막이 $SiO_2$, $SiN_x$인 ITZO 산화물 박막 트랜지스터 모두 positive 방향으로 이동하였고, 그 결과 문턱 전압, 이동도, 아문턱 기울기의 변화가 발생하였다. $SiO_2$의 경우 아문턱 기울기의 변화가 거의 없이 문턱 전압의 변화만을 보였고, 이는 단순히 ITZO층과 게이트 절연막 계면에 전자가 포획되거나 혹은 게이트 절연막 내에 전자가 주입이 되었기 때문이다. 반면에 $SiN_x$의 경우 ITZO층과 게이트 절연막 계면에 추가적인 결함(defect)이 생성되었기 때문에 $SiO_2$보다 더 많은 전자를 포획하여 아문턱 기울기와 문턱 전압의 변화가 컸다.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.629-635
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• 1997

The effects of the annealing atmospheres(O2, N2) and sintering additives that Bi2O3 is a major composition on the microwave dielectric and sintering propertie of (1-x)CaTiO3-xLaAlO3 system were investigated. The annealing atmospheres and the increase of annealing time after sintering did not affect the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) of (1-x)CaTiO3-xLaAlO3 system. However, the Q.f0 values of (1-x)CaTiO3-xLaAlO3 were very sensitive to annealing atmospheres. As the annealing time increased under O2 atmosphere the Q.f0 values of (1-x)CaTiO3-xLaAlO3 enhanced untill 10 hrs in 0.3$\leq$x$\leq$0.6 region, but degraded over that time. The increasing rate of Q.f0 value increased wth increasing x. On the other hand, as the annealing time increased under N2 atmosphere the Q.f0 values were constant in x$\leq$0.6 region, increased gradually in x$\geq$0.7 region. When 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% as sintering additives were added to (Ca0.5La0.5) (Ti0.5Al0.5)O3 (x=0.5) the sintering temperature of 1$600^{\circ}C$ was lowered to 140$0^{\circ}C$, and the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) were not nearly changed. The addition of 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% to (Ca0.5La0.5)(Ti0.5Al0.5)O3 made the Q.f0 values to be lower about 15% and 34%, respectively.

• Applied Chemistry for Engineering
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• v.19 no.3
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• pp.270-276
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• 2008

$N_2$ doped $TiO_2$ nano-sized powder was prepared using a DC arc plasma jet and investigated with XRD, BET, SEM, TEM, and photo-catalytic decomposition. Recently the research interest about the nano-sized $TiO_2$ powder has been increased to improve its photo-catalytic activity for the removal of environmental pollutants. Nitrogen gas, reacting gas, and titanium tetrachloride ($TiCl_4$) were used as the raw materials and injected into the plasma reactor to synthesize the $N_2$ doped $TiO_2$ power. The particle size and XRD peaks of the synthesized powder were analyzed as a function of the flow rate of the nitrogen gas. Also, the characteristics of the photo-catalytic decomposition using the prepared powder were studied. For comparing the photo-catalytic decomposition performance of $TiO_2$ powder with that of $TiO_2$ coating, $TiO_2$ thin films were prepared by the spin coating and the pulsed laser deposition. For the results of the acetaldehyde decomposition, the photo-catalytic activity of $TiO_{2-x}N_x$ powder was higher than that of the pure $TiO_2$ powder in the visible light region. For the methylene blue decomposition, the decomposition efficiency of $TiO_2$ powder was also higher than that of $TiO_2$ film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.574-577
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• 2001

GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.