• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.577-578
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Journal of the Korean Applied Science and Technology
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• v.14 no.2
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• pp.81-85
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• 1997

Tris(8-hydroxyquinoline)-aluminum complex($AlQ_3$) having greenish luminescent characteristics was synthesized and it was confirmed with UV-Vis absorption spectroscopy, elemental analysis, and FT-IR spectroscopy that $AlQ_3$ was successfully synthesized. Thin films of $AlQ_3$ having multilayer structure were prepared by spin coating method and vacuum evaporation technique. Photopluminescent characteristics of these films were investigated by Luminescence spectroscopy and Current-Voltage(I-V) characteristics of these films were also investigated.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1243-1244
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1703-1704
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.215-219
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• 2007

In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

• Composites Research
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• v.32 no.6
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• pp.314-318
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• 2019

A simple and very flexible automatic dipping machine was constructed for producing functional multilayer films on wide substrates via the layer-by-layer (LbL) assembly technique. The proposed machine exhibits several features that allow a fully automated coating operation, such as various depositing recipes, control of the dipping depth and time, operating speed, and rinsing flow, air-assist drying nozzles, and an operation display. The machine uniformly dips a substrate into aqueous mixtures containing complementary (e.g., oppositely charged, capable of hydrogen bonding, or capable of covalent bonding) species. Between the dipping of each species, the sample is spray cleaned with deionized water and blow-dried with air. The dipping, rinsing, and drying areas and times are adjustable by a computer program. Graphene-based thin films up to ten-bilayers were prepared and characterized. This film exhibits the highly filled multilayer structures and low thermal resistance, indicating that the robotic dipping system is simple to produce functional thin film coatings with a variety of different layers.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.353-356
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• 2010

InSb thin films with a thickness of approximately 300 nm were prepared using single- and double-source vacuum evaporation methods and their structures and properties were investigated in terms of a heat treatment procedure. The double-source InSb films, prepared by the alternate stacking of In and Sb, were polycrystalline in structure and included small amounts of unreacted In and Sb phases. After annealing at elevated temperatures below the melting point of InSb (525$^{\circ}C$), the films changed into the InSb phase and were found to contain small amounts of unreacted In. The formation capability of the InSb compound was slightly lower for multilayer films than for single-layer films. The electrical and galvanomagnetic properties were found to be strongly related to the microstructures of the films. The maximum value of the Hall mobility and the magnetoresistance were determined to be $4.3{\times}10^3cm^2$/Vs and 70%, respectively, for the single-layer films, while these values for the alternately stacked films were respectively $2.9{\times}10^3cm^2$/Vs and 29% for the $[Sb(2.5)/In(2.5)]_{60}$ films, and $3.1{\times}10^3cm^2$/Vs and 10% for the $[Sb(150)/In(150)]_1$ films.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.300-306
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• 1998

We have studied the optical effects in dielectric multilayer due to the interdiffusion formed during the deposition process. We suggest a numerical method to calculate the optical properties of periodical multilayer thin-films with gradient-index profiles. Using this method the spectral transmittance and reflectance were obtained for Fabry-Perot type filters, broad-band total reflectors and antireflection filters with interdiffusion layers. Interdiffusion reduced the spectral band width of high reflectance in total reflectors, and deteriorated the characteristics of multilayer AR-coatings leading to a large variation of reflectance if the number of the layers is large.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.9-17
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• 1994

Optical properties of $TiO_2$ thin films prepared by ion-beam assisted deposition(1BAD) were investigated. The result shows that the refractive index of IBAD TiOL thin films measured by an envelope method is closer to that of the corresponding bulk than that of conventionally deposited $TiO_2$ thin films and the packing density of IBAD $TiO_2$ thin films measured by a vacuum-to-air spectral shift of films increases drastically. The vacuum-to-air spectral shift of an IBAD $(TiO_2/SiO_2)$ multilayer interference filter was negligible as compared to that of a conventional interference filter and so the IBAD filter is denser and more stable optically than the conventional filter. Also it is observed that the IBAD and conventional $TiO_2$ thin films are stoichiometric and amorphous.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.15-21
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• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.