• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.597-598
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• 2006

This paper describes a development of a new $1.4{\times}1.1$ and $2.0{\times}1.4mm$ RF SAW filters made by PCB substrate instead of HTCC package, and this technology can reduce the cost of materials down to 40%. We have investigated the multi-layered PCB substrate structures and raw materials to find out the optimal flip-bonding condition between the $LiTaO_3$ wafer and PCB substrates. Also the optimal materials and processing conditions of epoxy laminating film were found out through the experiments which can reduce the bending moment caused by the difference of the thermal expansion between the PCB substrate and laminating film. The new PCB SAW filter shows good electrical and reliability performances with respect to the present SAW filters.

• 대한전자공학회논문지SD
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• 제43권11호
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• pp.8-13
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• 2006

최근 RF용 탄성표면파 필터는 HTCC 패키지를 이용한 칩스케일 패키지 공법으로 제작되고 있다. 본 연구에서는 HTCC 패키지를 이용하는 대신에 BT 레진 계열의 PCB 기판을 이용하여 $1.4{\times}1.1$과 $2.0{\times}1.4mm$ 규격을 가지는 새로운 SAW RF 필터를 개발하였다. 본 기술을 적용하여 기존대비 약 40% 이상의 재료비 절감효과를 얻을 수 있다. 다층 PCB 기판과 $LiTaO_3$ 탄성표면파 기간간의 플립 본딩 조건을 최적화하였고, 적절한 PCB 재료선정을 통하여 PCB 기판 및 에폭시 라미네이팅 필름간의 열팽창계수 차이로 인해 발생하는 응력을 최소화시켰다. 이렇게 개발된 탄성표면파 필터는 기존의 제품에 비해 신뢰성 및 전기적 특성면에서 향상된 특성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.