• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.11a
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• pp.107-109
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• 2007

LED is expected as an environmentally friendly light source with its good reliability and long lifetime. A few ten mW white LED can substitute for the indicator light source, and it is required to study several watt multi-chip semiconductor light sources in order to replace the light sources for general illumination such as incandescent lights and fluorescent lamps. Since the optical technology used for several mW white LED light source uses only 30% to 50% of the light, it is required to develop the design technology of optical system and lens to improve the efficiency more than 80% for insuring the high power of white LED. In this paper, we designed and fabricated new structure reflector to increase the efficiency.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.882-884
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• 2005

A new rectangular shape microlens array having high sag for solid-state lighting is presented. Proposed microlens, which has high sag, over $375{\mu}m$ and large diameter, over 3 mm can enormously enhance output optical extraction efficiency. Rectangular shape of microlens can maximize the fill factor of light-emitting-diode (LED) package and minimize the optical loss at the same time. This wafer level microlens array is fabricated on LED package. It has many advantages in optical properties, low cost, high aligning accuracy, and mass production.

• Journal of the Semiconductor & Display Technology
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• v.4 no.3 s.12
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• pp.17-22
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• 2005

LED lamp was designed by the serial-parallel integration of LED chips in metal-interconnection. The 7 $4.5{\times}4.5\;in^{2}$ masks were designed with the contact type of chrome-no mirror?dark. The white epitaxial thin film was grown by metal-organic chemical vapor deposition. The active layers were consisted with the serial order of multi-quantum wells for blue, green and red lights. The fabricated LED chip showed the electroluminescence peaked at 450, 560 and 600 nm. For the current injection of 20 mA, the operating voltage was measured to 4.25 V and the optical emission power was obtained to 0.7 $\mu$W.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.9
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• pp.1-5
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• 2013

We developed high-efficient 6W-LED package with simple structure by applying Heat Slug and silicone-reflector. LED package was manufactured in $8.5{\times}8.5mm$ sized multi-chip structure having thickness of $500{\mu}m$ achieved by bonding silicon-reflector with prepreg on top of the plate after implementing the reflector placed on copper substrate Half Etching by thickness of $200{\mu}m$. The luminous flux, luminous efficacy, correlated color temperature, color rendering index and thermal resistance of developed LED was evaluated, and it verified the application of products by applying it to 120W-LED road luminaires through simulation. The luminous efficacy of LED package reached over 130lm/W, and it is possible to be manufactured into 120W-LED road luminaires using 18 packages. In addition, the simulation results showed average of horizontal illuminance and overall illuminance uniformity that is suitable for three-lane road.

• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.31-35
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• 2004

A blue light emitting diode with 8 periods InGaN/GaN multi-quantum well structure grown by metal-organic chemical vapor deposition was fabricated with the inclusion of the metal-interconnection process in order to integrate the chips for light lamp. The quantum well structure provides the blue light photoluminescence peaked at 479.2 nm at room temperature. As decreasing the temperature to 20 K, the main peak was shifted to 469.7 nm and a minor peak at 441.9 nm appeared indicating the quantum dot formation in quantum wells. The current-voltage measurement for the fabricated LED chips shows that the metal-interconnection provides good current path with ohmic resistance of 41 $\Omega$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.12
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• pp.23-30
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• 2009

LEDs are increasingly used for many applications including automotive, aviation, display, transportation and special lighting applications. Generally, the RGB multichip LED luminaire applied to signboard, emotional lighting system and display device and the white LED luminaire applied to general lighting system. white LED spectra for general lighting should be designed for high luminous efficacy as well as good color rendering. This paper describes characteristics of LED luminaire white LED and RGB multichip LED. Two type of LED luminaire prototype used experiment physical, electrical and optic test and performance analyzed. RGB multi-chip and phosphor-type white LED luminaire were analyzed by experiment on their color characteristics and luminous efficacy of radiation, distribution curve, and electrical characteristics. Research work is in progress to develop an improved performance for optic and electrical works well for two type of LED luminaires.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.201-205
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• 2015

This paper dealt with the condensing technology of an LED light source that uses a parabolic reflector to replace a searchlight equipped with a xenon lamp. A ray-tracing simulation was conducted to analyze the influence of the diameter of the reflector and the size of the light source on light condensing. The combination of a parabolic reflector with a diameter of 620 mm and a focal distance of 220 mm, and a 9 mm multi-chip package (MCP) with a luminous flux of 7,000 lm showed the narrowest beam angle. The luminous intensity at the center was measured at 7.7×10⁶ cd. The distance between the light source and the point where the illuminance was 1 lx was calculated to be 2.8 km. The power consumption of the system was 95 W, which is only 9.5% of that of the 1 kW xenon searchlight, and the beam angle was 1.03°. In a site experiment, it was confirmed that the light ray reflected from the LED searchlight proceeds forward without any diffusion because of the narrow beam angle.

• Resources Recycling
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• v.24 no.4
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• pp.50-55
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• 2015

In this study, we have investigated solvent extraction of Ga and recovery of high pure Ga solution from MOCVD dust for manufacturing of LED chip. Effect of extractan, concentration of extractant were examined for choosing the more effective extractant and high pure Ga solution was fabricated by multi-stage extraction/stripping process. For extraction/separation of Ga based on the analysis of raw-material in previous study, 3 different extractants PC 99A, DP-8R, Cyanex 272 has been investigated and the extraction efficiency of 1.5 M Cyanex 272 was 43.8%. It was conformed that extraction efficiency of Ga was 83% in multi-stage extraction and 5N high purity Ga stripping solution without impurities also obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.1
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• pp.7-15
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• 2002

This paper is concerned with remote environment monitoring & control for the breeding house as scattering far and wide. The environment data is detected in the breeding house that is collected to one processor. It's adapted to the PSTN(public switch tele-phone network) and multi-processing for exchange the environment data and the control data in between the manager and a breeding house by micro-processor. We have designed the algorithm of the communication sequence through the experimental research. This system is composed of sensor interface, FSK communications, LED display, data latch and MCS-51 single-chip. The S/W is composed with data acquisition by multi-processing, data communication and interrupt. And this paper is Proposed the DB structure algorithm concern to a mount scale using web design. The subject is a performance of effective management for the breeding house.