• Title/Summary/Keyword: Monocrystalline

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Molecular Dynamics Simulation of Friction and Wear Behavior Between Carbon and Copper (탄소와 구리의 마찰 및 마모에 관한 분자 동역학 시뮬레이션)

  • Kim Kwang-Seop;Kang Ji-Hoon;Kim Kyung-Woong
    • Tribology and Lubricants
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    • v.20 no.2
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    • pp.102-108
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    • 2004
  • In this paper, friction and wear behaviors between monocrystalline, defect-free copper and carbon on the atomic scale are investigated by using 2-dimensional molecular dynamics simulation. It is assumed that all interatomic forces are given by Morse potential. The deformation of carbon is assumed to be neglected and vacuum condition is also assumed. Average friction and normal forces for various surface conditions, various scratch speeds and scratch depths are obtained from simulations. Changes of wear behaviors for various scratch speeds and surface conditions are investigated by observing snapshots in scratch process. The effects of surface conditions, scratch speeds, and scratch depths on the friction force, normal force, and friction coefficient are also investigated.

A Computer Model for Polycrystalline Silicon $n^+$ -p Solar Cells (다결정 실리콘 $n^+$ -p 태양전지의 Computer Model)

  • 정호선
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.18 no.6
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    • pp.30-37
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    • 1981
  • Numerical calculations have beee made of the effect of grain size on the three-dimensional carrier density, the quantum efficiency, and the AMI efficiency of 30$\mu$m polycrystalliue silicon p-n junction solar cells. Quantum efficiencies calculated for the polycrystalline silicon solar cells are compared to the monocrystalline cases. An efficiency of 12% can theoretically be obtained with grain size 100$\mu$m, and 6% for 5$\mu$m grains.

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Fabrication and Characteristics Study of $n-Bi_2O_3$/n-Si Heterojunction

  • Ismail, Raid A.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.2
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    • pp.119-123
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    • 2006
  • This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.

An a-D film for flat panel displays prepared by FAD

  • Liu, Xianghuai;Mao, Dongsheng
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.7-14
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    • 1998
  • Details are given of an study of the characteristics of field-induced electron emission from hydrogen-free high $sp^3$ content(>90%) amorphous diamond (a-D) film deposited on heavily doped ($\rho$<0.01 $\Omega\cdot\textrm{cm}$) n-type monocrystalline Si(111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. Emission current can reach 0.9 $\mu$A at applied field as low as 1 V/$\mu\textrm{m}$, and emission current density can be obtained about several mA/$\textrm{cm}^2$. The emission current is stable when the beginning current is at 50 $\mu$A within 72 hours. Uniform fluorescence display of electron emission from whole face of the a-D film under the electric field of 10~20 V/$\mu\textrm{m}$ was also observed. It can be considered that the contribution of excellent electron emission property results from its smooth, uniform, amorphous surface and high $sp^3$ content of the a-D films.

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A Study on the Physical Properties of Slag-based Glass-Ceramics (Slag를 위주로 한 Glass-Ceramics 의 물리적 성질에 관한 연구)

  • 장승현;정형진
    • Journal of the Korean Ceramic Society
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    • v.17 no.1
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    • pp.27-34
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    • 1980
  • The synthesis of glass-ceramic materials from glasses based on industrial wastes or natural rocks their physical properties were studied. Glasses of composition, CaO14.7∼16.1, MgO7.4∼9.0, Al2O38.3∼19.3, SiO2 48.9∼51.0wt% were prepared from domestic blast furnace slag, serpentine, sea sand and etc. with additions of chromic oxide, and fluoride as nucleating agent. The glasses were subjected to controlled heat treatments and yielded fine microstructure of glass-ceramics which were composed of monocrystalline phase of aluminous diopside. X-ray diffraction techniques were adopted to identify the crystalline phases and to determine the degree of crystallization quantitatively. Density, coefficient of thermal expansion, young's modulus, microhardness and modulus of rupture were measured and the resulting properties were discussed in terms of the heat-treatment conditions, the degree of crystallization, species of crystaline phase, the microstructures formed in glass-cramics and the chemical compositions of mother glasses.

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Investigation of porous silicon anti-reflection coatings for monocrystalline silicon solar cells (다공성 실리콘 반사방지막을 적용한 단결정 실리콘 태양전지에 대한 연구)

  • Kim, Beom-Ho;Choe, Jun-Yeong;Lee, Eun-Ju;Lee, Su-Hong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.04a
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    • pp.155-156
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    • 2007
  • 본 연구에서는 태양전지 표면에 입사된 빛의 반사율을 최소화하기 위해서 단결정 실리콘 기판 표면에 다공성 실리콘층을 적용하여 반사방지막(Anti-Reflection Coating, ARC)을 형성하는 실험을 하였다. 다공성 실리콘(Porous silicon, PSi)은 실온에서, 기판 성질에 따라 일정 비율로 만든 전해질 용액($HF-C_2H_5OH-H_2O$)을 사용하여 실리콘 표면에 양극산화처리 함으로써 단순 공정만으로 실리콘 기판의 반사율을 낮출 수 있다. 본 연구는 일정한 면저항을 가지는 단결정 실리콘 기판에 다공성 실리콘층을 여러 조건으로 형성하여 반사방지막으로써의 특성을 비교 분석하였다.

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Effect of Saw-Damage Etching Conditions on Flexural Strength in Si Wafers for Silicon Solar Cells (태양전지용 실리콘 기판의 절삭손상 식각 조건에 의한 곡강도 변화)

  • Kang, Byung-Jun;Park, Sung-Eun;Lee, Seung-Hun;Kim, Hyun-Ho;Shin, Bong-Gul;Kwon, Soon-Woo;Byeon, Jai-Won;Yoon, Se-Wang;Kim, Dong-Hwan
    • Korean Journal of Materials Research
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    • v.20 no.11
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    • pp.617-622
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    • 2010
  • We have studied methods to save Si source during the fabrication process of crystalline Si solar cells. One way is to use a thin silicon wafer substrate. As the thickness of the wafers is reduced, mechanical fractures of the substrate increase with the mechanical handling of the thin wafers. It is expected that the mechanical fractures lead to a dropping of yield in the solar cell process. In this study, the mechanical properties of 220-micrometer-solar grade Cz p-type monocrystalline Si wafers were investigated by varying saw-damage etching conditions in order to improve the flexural strength of ultra-thin monocrystalline Si solar cells. Potassium hydroxide (KOH) solution and tetramethyl ammonium hydroxide (TMAH) solution were used as etching solutions. Etching processes were operated with a varying of the ratio of KOH and TMAH solutions in different temperature conditions. After saw-damage etching, wafers were cleaned with a modified RCA cleaning method for ten minutes. Each sample was divided into 42 pieces using an automatic dicing saw machine. The surface morphologies were investigated by scanning electron microscopy and 3D optical microscopy. The thickness distribution was measured by micrometer. The strength distribution was measured with a 4-point-bending tester. As a result, TMAH solution at $90^{\circ}C$ showed the best performance for flexural strength.

Quantitative analysis of mutans streptococci adhesion to various orthodontic bracket materials in vivo (다양한 교정용 브라켓 원재료에 부착하는 mutans streptococci 양의 비교분석)

  • Yu, Jin-Kyoung;Ahn, Sug-Joon;Lee, Shin-Jae;Chang, Young-Il
    • The korean journal of orthodontics
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    • v.39 no.2
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    • pp.105-111
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    • 2009
  • Objective: To estimate the effects of bracket material type on enamel decalcification during orthodontic treatment, this study analyzed the adhesion level of mutans streptococci (MS) to orthodontic bracket materials in vivo. Methods: Three different types of orthodontic bracket materials were used: stainless steel, monocrystalline sapphire, and polycrystalline alumina. A balanced complete block design was used to exclude the effect of positional variation of bracket materials in the oral cavity. Three types of plastic individual trays were made and one subject placed the tray in the mouth for 12 hours. Then, the attached bacteria were isolated and incubated on a mitis salivarius media containing bacitracin for 48 hours. Finally, the number of colony forming units of MS was counted. The experiments were independently performed 5 times with each of the 3 trays, resulting in a total of 15 times. Mixed model ANOVA was used to compare the adhesion amount of MS. Results: There was no difference in colony forming units among the bracket materials irrespective of jaw and tooth position. Conclusions: This study suggested that the result of quantitative analysis of MS adhesion to various orthodontic bracket materials in vivo may differ from that of the condition in vitro.

Effects of Surfactant Addition in Texturing Solution for Monocrystalline Si Solar Cells (단결정 실리콘 태양전지용 텍스쳐링 용액의 계면활성제 첨가 효과)

  • Kang, Byung Jun;Kwon, Soonwoo;Lee, Seung Hun;Chun, Seungju;Yoon, Sewang;Kim, Donghwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.74.1-74.1
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    • 2010
  • 단결정 실리콘 태양전지 공정에서 이방성 습식 식각 용액을 이용하여 기판 표면에 피라미드 구조를 형성하는 것을 텍스쳐링이라고 한다. 실리콘 기판의 표면을 식각하여 요철구조를 만들어줌으로써 셀 내부로 입사되는 광량을 증가시켜 태양전지의 단락 전류 및 효율 향상 효과를 얻을 수 있다. 일반적인 태양전지 공정에서는 요철구조를 형성할 시 따로 마스크를 사용하지 않으며, 태양전지 급 웨이퍼를 절삭손상층 식각 한 후, 강염기성 용액과 알코올의 혼합용액에 담가서 이방성 식각을 실시하여 요철 구조를 형성한다. 본 연구는 기존의 텍스쳐링 공정에서 사용되는 대표적인 용액인 수산화칼륨(potassium hydroxide, KOH)과 알코올의 혼합용액과 사메틸수산화암모늄(Tetramethylammonium Hydroxide, TMAH)과 알코올의 혼합용액에 Triton X-100 계면활성제를 각각 첨가하여 실험을 진행하였다. 식각된 태양전지용 실리콘 기판의 표면은 주사전자현미경(Scanning Electron Microscope)을 통하여 관찰하였고, 분광광도계(UV/VIS/NIR Spectrophotometer)로 반사도 값을 측정하여 기판의 특성을 평가하였다.

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Plasma nitridation of atomic layer deposition-Al2O3 by NH3 in PECVD

  • Cha, Ham cho rom;Cho, Young Joon;Chang, Hyo Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.304.1-304.1
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    • 2016
  • We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

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