• 제목/요약/키워드: Monoclinic

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Palladium(II) Schiff Base Complexes Derived from Allylamine and Vinylaniline

  • Uh, Yoon-Seo;Zhang, Hai-Wen;Vogels, Christopher M.;Decken, Andreae;Westcott, Stephen A.
    • Bulletin of the Korean Chemical Society
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    • 제25권7호
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    • pp.986-990
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    • 2004
  • Condensation of salicylaldehyde $(2-HOC_6H_4C(O)H)$ with allylamine afforded the unsaturated salicylaldimine, $2-HOC_6H_4C(H)=NCH_2CH=CH_2$. Similar reactivity was observed with substituted salicylaldehydes. Further reaction of these Schiff bases with palladium acetate or $Na_2PdCl_4$ afforded complexes of the type $PdL_2$, where L = deprotonated Schiff base. The molecular structure of the parent salicylaldimine palladium complex $[trans-(2-OC_6H_4C(H)=NCH_2CH=CH_2)_2Pd]$ (1) was characterized by an X-ray diffraction study. Crystals of 1 were monoclinic, space group $P2_1/n,\;a\;=\;14.0005(9)\;{\AA},\;b\;=7.2964(5)\;{\AA},\;c\;=\;17.5103(12)\;{\AA},\;{\beta}\;=\;100.189(1)^{\circ}$, Z = 4. Analogous chemistry with 4-vinylaniline also gave novel palladium complexes containing a pendant styryl group. Crystals of $[trans-(2-HOC_6H_4C(H)=N-4-C_6H_4CH=CH_2)_2Pd]$ (4) were monoclinic, space group $P2_1/c$, a = 13.7710(14) ${\AA}$, b = 11.0348(11) ${\AA}$, c = 7.8192(8) ${\AA}$, ${\beta}\;=\;98.817(2)^{\circ}$, Z = 2.

인가 전압이 Y-TZP의 저온열화에 미치는 영향 (Influence of Applied Electric Field on Low Temperature Degradation of Y-TZP)

  • 장주웅;이홍림;김대준;오남식;이득용
    • 한국세라믹학회지
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    • 제34권12호
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    • pp.1254-1260
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    • 1997
  • Influence of applied electric field on the low temperature degradation of 3 mol% YaO3 stabilized tetragonal zirconia polycrystals(3Y-TZP) was investigated using X-ray diffractometry of specimens aged under the dc field of 1.1 kV/mm in silicone oil both of 12$0^{\circ}C$-21$0^{\circ}C$. After the aging, the tetragonal to monoclinic phase transformation was observed only on the specimen surface of 3Y-TZP faced to the anode. This indicated that the surface was overcrowded with oxygen ions as a result of diffusion of oxygen vacancies toward the cathode-sided surface. To elucidate an influence of the applying time of the electric field on the extent of the degradation of 3Y-TZP in air, specimens were aged fore 0-2 hours under the electric field in the oil bath of 12$0^{\circ}C$ and then subsequently aged for 3h at 22$0^{\circ}C$ in air. The longer the specimens were aged under the field, the more extensive the transformation to the monoclinic phase was on the specimen surface faced to the cathode, probably originated from a high diffusion rate of oxygen ions due to a steep oxygen vacancy concentration gradient.

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Characterization of the Oxide Layer Formed on the Cu-Zr Based Metallic Glass during Continuous Heating

  • Lim, Ka-Ram;Kim, Won-Tae;Kim, Do-Hyang
    • Applied Microscopy
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    • 제42권3호
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    • pp.174-178
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    • 2012
  • In the present study, the oxidation behavior of $Cu_{50}Zr_{50}$ and $Cu_{46}Zr_{46}Al_8$ metallic glasses has been investigated using transmission electron microscopy with a particular attention on the oxidation behavior in the supercooled liquid state. Identification of the oxidation product after continuous heating treatment shows that in $Cu_{50}Zr_{50}$ metallic glass, $ZrO_2$ with the monoclinic structure forms on the supercooled liquid as well as on the crystallized matrix. On the contrary, in $Cu_{46}Zr_{46}Al_8$ metallic glass, $ZrO_2$ with the tetragonal structure forms on the supercooled liquid, but that with the monoclinic structure forms on the crystallized matrix. The result indicates that the $Cu_{50}Zr_{50}$ metallic glass exhibits far better oxidation resistance in the supercooled liquid state than the $Cu_{46}Zr_{46}Al_8$ metallic glass.

Neo-inositol 및 Scyllo-inositol의 結晶 및 分子 構造 (The Crystal and Molecular Structures of Neo-inositol and Two Forms of Scyllo-inositol)

  • Yeon, Younghee
    • 한국결정학회지
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    • 제12권3호
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    • pp.150-156
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    • 2001
  • Nea-inositol is triclinic P???, with a =4.799(1), b=6.520(1), c=6.505(1) Å, α=70.61(1), β=69.41(1), γ=73.66(1)°, Z=1, molecular symmetry ???. Scyllo-inositol, from A, is monoclinic, P2₂/c, with a=5.089(1), c=11.948(2)Å, β=116.98(2)°, Z=2, molecular symmetry ???. Form B is triclinic, P???, with a=6.725(1), b=6.797(1), c=8.635(2)° Å, α=95.45(2), β=99.49(2), γ=99.19(2)°, Z=2, molecular symmetry ???. This crystal structure is pseudo-monoclinic, having two centrosymmetrical molecules with the almost identical conformation and orientation in the crystal lattice. The molecules have the expected chair conformations with puckering parameters of Q=0.609(2)Å for n대, 0.581(2)Å for Scyllo-A, and 0.566(2) Å for Scyllo-B. The bond lengths and angles are normal, C-C, 1.505 to 1.531 8A, C-O, 1.415 to 1.440 Å, C-C-C, 108.2 to 112.9°. The molecules are linked by systems of finite and infinite chains of hydrogen bonds.

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$Al_{71.6}Ge_{28.4}$ 공정합금의 미세구조 및 기계적 성질의 평가 (Microstructural evolution and mechanical properties of $Al_{71.6}Ge_{28.4}$ eutectic alloy)

  • 박진만;육완;김도향
    • 한국주조공학회지
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    • 제27권4호
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    • pp.167-172
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    • 2007
  • In the present study, the microstructural evolution and mechanical properties of $Al_{71.6}Ge_{28.4}$ eutectic alloy have been investigated. Stable (fcc ${\alpha}$-Al and diamond cubic ${\beta}$-Ge) and various metastable crystalline (monoclinic, rhombohedral) phases were produced by competitive phase selection during non-equilibrium processing methods i.e. melt spinning and injection casting. The as-injection casted samples containing metastable-equilibrium eutectic (${\alpha}$-Al + monoclinic) structure showed much higher strength than samples with equilibrium eutectic (${\alpha}-Al+{\beta}-Ge$) structure but plasticity disappointingly diminished. In order to endow the enhanced ductility without significant strength drop, the alloys was heat-treated at transition temperature from metastable phase to stable phase. The annealed specimen displayed the phase transformed microstructural evolution and enhanced macroscopic plasticity.

Observation of Unusual Structural Phase Transition in $VO_2$ Thin Film on GaN Substrate

  • 양형우;손정인;차승남;김종민;강대준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.573-573
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    • 2012
  • High quality $VO_2$ thin films were successfully grown on GaN substrate by optimizing oxygen partial pressure during the growth using RF sputtering technique. The $VO_2$ thin film grown on GaN substrate exhibited an unusual metal insulator transition behavior, which was known to be observed only either in doped sample or under uniaxial stress. Raman spectra also confirmed that metal insulator transition occurred from monoclinic M1 to rutile R phase via monoclinic M2 phase with increasing temperature. We believe that large lattice mismatch between $VO_2$ and GaN substrate may cause M2 phase to be thermodynamically stable. Optical transmittance and its electrical switching behavior were carefully investigated to elucidate the underlying physics of its metal insulator transition behavior. This study may lead to a unique opportunity to better understand the growth mechanism of M2 phase dominant $VO_2$ thin films.

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$Cd_{4}GeS_{6}$$Cd_{4}GeS_{6}:Co^{2+}$ 단결정의 성장 (Crystal Growth of Cd4GeS6 and Cd4GeS6:Co2+Single Crystals)

  • 김덕태;김형곤;김남오
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집
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    • pp.1-6
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    • 2004
  • In this paper author describe the undoped and $Co^{2+}$ (0.5mole%)doped $Cd_4GeS_6$ single crystals were grown by the chemical transporting reaction(CTR) method using high purity(6N) Cd, $GeS_2$, S elements. It was found from the analysis of X-ray diffraction that the undoped and $Co^{2+}$(0.5mole%) doped $Cd_{4}GeS_{6}$ compounds have a monoclinic structure in space grop Cc. The optical energy band gap was direct band gap and temperature dependence of optical energy gap was fitted well to Varshni equation. Impurity optical absorption peaks due to the doped cobalt in the $Cd_4GeS_6:Co^{2+}$ single crystal were observed at 3593cm-1, 5048cm-1, 5901cm-1, 7322cm-1, 12834cm-1, 13250cm-1, 14250cm-1,and 14975cm-1 at 11.3K.

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$Zn_4SnSe_6:Co^{2+}$ 단결정의 성장방법에 관한 연구 (The Single Crystal Growth Method of undoped and Co-doped $Zn_4SnSe_6$)

  • 김덕태;박광호;현승철;방태환;김남오;김형곤
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.27-30
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    • 2006
  • In this paper, the undoped and Co-doped $Zn_4SnSe_6$ single crystals grown by the chemical transporting reaction(CTR) method using iodine as a transporting agent are investigated. For the crystal growth, the temperature gradient of the CTR furnace was kept at $680^{\circ}C$ for the source zone and at $780^{\circ}C$ for the growth zone for 7days. It was found from the analysis of x-ray diffraction that the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ compounds have a monoclinic structure. The direct optical energy band gap of the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ single crystals at 300K were found to be 2.146eV and 2.042eV.

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Effect of annealing atmosphere on the properties of chemically deposited Ag2S thin films

  • Pawar, S.M.;Shin, S.W.;Lokhande, C.D.;Kim, J.H.
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.34.2-34.2
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    • 2009
  • The silver sulphide (Ag2S) thin films have been chemically deposited from an alkaline medium (pH 8 to 10) by using a silver nitrate and thiourea as a Ag and S ion precursor sources. Ethylene Damine tetraacetic acid (EDTA) was used as a complexing agent. The effect of annealing atmosphere such as Ar, N2+H2S and O2 on the structural, morphological and optical properties of Ag2S thin films has been studied. The annealed films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques for the structural, morphological, and optical properties, respectively. XRD studies reveal that the as-deposited thin films are polycrystalline with monoclinic crystal structure, is converted in to silver oxide after air annealing. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. Optical absorption study shows the as-deposited Ag2S thin films with band gap energy of 0.92eV and after air annealing it is found to be 2.25 eV corresponding to silver oxide thin films.

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졸-겔법으로 제조한 $ZrO_2.SiO_2$계 결정화유리의 결정화 및 파괴인성에 관한 연구 (A Study of Crystallization and Fracture Toughness of Glass Ceramics in the $ZrO_2.SiO_2$ Systems Prepared by the Sol-Gel Method)

  • 신대용;한상목;강위수
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.50-56
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    • 2000
  • Precursor gels with the composition of xZrO2·(100-x)SiO2 systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence of tetragonal to monoclinic transformation of ZrO2 was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal ZrO2 occurred through 3-dimensional diffusiion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about 310∼325±10kJ/mol. The growth of t-ZrO2, in proportion to the cube of radius, increased with increasing heating temperature and hteat-treatment time. It was suggested that the diffusion of Zr4+ ions by Ostwald ripening was rate-limiting process for thegrowth of t-ZrO2 crystallite size. The fracture toughness of xZrO2·(100-x)SiO2 systems glass ceramics increased with increasing crystallite size of t-ZrO2. The fracture toughness of 30ZrO2·70SiO2 system glass ceramics heated at 1,100℃ for 5h was 4.84 MPam1/2 at a critical crystaliite size of 40 nm.

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