• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.158-160
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• 2001

${\beta}-Ga_2O_3$ nanobelts and nanoparticles were synthesized by a thermal annealing of as-milled GaN powders at $930^{\circ}C$ in nitrogen and oxygen atmosphere. respectively. The width of the nanobelts are $20\;nm{\sim}1000\;nm$. the thickness of the nanobelts are 100 nm. A bundle of the nanobelts is several centimeters in length. The lattice structure of these nanobelts and nanoparticles was identified to be a monoclinic ${\beta}-Ga_2O_3$ by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED).

• Advances in nano research
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• 제1권4호
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• pp.211-218
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• 2013

A low-cost, green and reproducible citric acid assisted synthesis of nanocrystalline $Al_{0.5}Ag_{0.5}TiO_3$ (n-AAT) powder is reported. X-ray, FTIR, energy dispersive X-ray, transmission electron microscopy and scanning electron microscopy analyses are performed to ascertain the formation of n-AAT. X-ray diffraction data analysis indicated the formation of monoclinic structure. Spherical shaped particles having the sizes of 3-15 nm are found. The mechanism of nano-transformation for the soft-chemical synthesis of n-AAT has been explained using simple organic chemistry rules and nucleation and growth theory. Dielectric study revealed that AAT ceramic might be a suitable candidate for capacitor applications.

• 한국세라믹학회지
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• 제49권5호
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• pp.454-460
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• 2012

The nano-sized zirconia powders were synthesized in an impregnation method using pulp and $ZrOCl_2{\cdot}8H_2O$ as an initial material. The synthesized powders were characterized by XRD and FE-SEM. The particle size of the powder was controlled by preparation conditions, such as drying temperature and time. As a result of the various drying and calcination conditions, 30~50 nm sized homogeneous zirconia particles were obtained at $800^{\circ}C$ for 1 h. Crystallization and the rapid growth of particles were accelerated with increasing calcination temperature and time. Tetragonal phase generated below $800^{\circ}C$ were transferred to monoclinic phase with increasing calcination temperature and time. Moreover, above $800^{\circ}C$, heat treatment time had very large influence on the particle growth, and the change of drying condition also had large influence on the growth of a crystal.

• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.397-400
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• 2010

Zirconium oxide thin films deposited on the p-type Si(100) substrates by radio-frequency (RF) reactive magnetron sputtering with different plasma gas ratios have been studied by using spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The deposition of the films was monitored by the oxygen gas ratio which has been increased from 0 to 80%. We found that the thickness and roughness of the zirconium oxide thin films are relatively constant. The XRD revealed that the deposited thin films have polycrystalline phases, Zr(101) and monoclinic $ZrO_2$ ($\bar{1}31$). The XPS result showed that the oxidation states of zirconium suboxides were changed to zirconia form with increasing $O_2$ gas ratio.

• 소성∙가공
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• 제7권5호
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• pp.481-488
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• 1998

The active metal brazing was applied to bond Alumina and Ni-Cr steel by Ag-Cu-Zr-Sn alloy and the interfacial microstructure and reaction mechanism were investigated. Polycrystalline monoclinic $ZrO_2$ with a very fine grain of 100-150 nm formed at the alumina grain boundary contacted with Zr segregation layer at the interface. The $ZrO_2$ layer containing the inclusions and cracks were developed at the boundary of inclusion/$ZrO_2$ due to the difference in specific volume. The development of $ZrO_2$ at the interface was successfully explained by the preferential penetration of $ZrO_2$ at the interface was successfully explained by the preferential penetration of Zr atoms a higher concentration of oxygen and a high diffusion rate of Al ions into molten brazing alloy.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.61.1-61
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• 2003

Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.62.2-62
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• 2003

Material Characteristics of zirconium oxide thin films obtained by plasma enhanced chemical vapor deposition on p-type Si(100) substrates were investigated to explain their unable electrical properties. The films obtained without heating had polycrystalline nanograins that are mostly of a tetragonal phase under oxygen-deficient plasma conditions but transformed into a monoclinic phase with increasing $O_2$ addition in the plasma. Mostly amorphous bulk $ZrO_2$ with a relatively thicker and smoother interfacial layer was obtained from oxygen-rich plasmas, resulting in a decrease in both the overall dielectric constant and the leakage current density. the interfacial layer formed between the bulk $ZrO_2$ and Si substrate was analyzed to be zirconium silicate, which approached $SiO_2$ as its zirconium content decreased with the increasing gas phase $O_2$ content.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권2호
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• pp.85-90
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• 2003

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were monoclinic structure. The temperature dependence of optical energy 9ap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

• 한국세라믹학회지
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• 제31권8호
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• pp.879-885
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• 1994

Coprecipitation technique was used to synthesize ZrO2+12 mol% CeO2 powders with ZrOCl2.8H2O and Ce(NO3)3.6H2O as starting materials. The powders were dried on different conditions such as distilled water, ethanol, and azeotropic distillation. The powders prepared by azeotropic distillation showed weak aggregation of particles and the average particle size of powders calcined at 85$0^{\circ}C$ for 1 hour was 0.19 ${\mu}{\textrm}{m}$. The optimum sintering temperature and holding time are 130$0^{\circ}C$ and 2.5~10 hours, respectively. Beyond the optimum conditions, a phase transition from tetragonal to monoclinic causes to produce cracks in the sintered bodies and to decrease the density.

• The Korean Journal of Ceramics
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• 제1권1호
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• pp.35-39
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• 1995

Yttrium aluminum garnet(YAG) powders were synthesized by spray-drying of the hydroxides coprecipitated from a mixture of aqueous solutions of $Al(NO_3)_3.9H_2O \;and\; Y(NO_3)_3.6H_2O$ Phase formation in the powders during heat treatments and their sintering charactristics were investigated. In the powder obtained by washing the hydroxides before spray-drying, a metastable yttrium aluminum hexagonal (YAH) phase was first crystallized and then transformed into YAG as temperature was increased. The formation of YAH was attributed to a deviation in compositions of the particles from the starting composition of YAG. However, the powder prepared without washing step contained a stable yttrium aluminum monoclinic(YAM) phase in addition to YAG due to a large deviation from the starting composition. A powder compact of a single phase YAG was pressureless-sintered for 4 hrs at $1700^{\circ}C$ and the density was 93% of the theoretical density.