• Title/Summary/Keyword: Molybdenum (Mo)

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Polymerization of 3-Ethynylphenol Try Transition Metal Catalysts

  • Gal, Yeong-Soon;Lee, Won-Chul;Jin, Sung-Ho;Lee, Hyung-Jong
    • Macromolecular Research
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    • v.8 no.5
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    • pp.231-237
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    • 2000
  • The polymerization of 3-ethynylphenol, phenylacetylene having hydroxy functionality, was carried out by tungsten and molybdenum-based transition metal catalysts. The polymerization proceeded to give a moderate yield of polymer. The effects on the mole ratio of monomer to catalyst (M/C), initial monomer concentration ((Mb), and the polymerization temperature for the polymerization of 3-ethynylphenol were investigated. The catalytic activity of W-based catalysts was found to be greater than that of Mo-based catalysts. The resulting polymers were brown or black powders and mostly insoluble in organic solvents. Structural analysis of the polymer by instrumental methods revealed the conjugated polymer backbone structure carrying hydroxyphenyl moieties. Thermal and morphological properties of the resulting poly(3-ethynylphenol) were also discussed.

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Search for new red phosphors under NUV/blue excitation - the stimulating future for solid state lighting

  • Vaidyanathan, Sivakumar;Jeon, Duk-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1350-1352
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    • 2008
  • Research on down conversion phosphor materials is the key for the development of solid state lighting (SSL). Especially finding alternative red phosphor for white LEDs based on blue or NUV LEDs are important research task. Under this view, we have synthesized a series of $Eu^{3+}$ substituted $La_2W_{2-x}Mo_xO_9$ (x = 0 ~ 2, insteps of 0.1) red phosphor and characterized by X-ray diffraction (XRD) and photoluminescence. XRD results reveal a phase transition from triclinic to cubic structure for $x\;{\geq}\;0$. All the compositions show broad charge transfer band due to charge transfer from oxygen to tungsten/molybdenum and red emission due to $Eu^{3+}$ ions. Select compositions show high red emission intensity compared to the commercial red phosphor under NUV/blue ray excitation. Hence, this candidate can be possible red emitting phosphors for white LEDs.

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Effect of Hydrogen Plasma Treatment on the Photoconductivity of Free-standing Diamond Film (다이아몬드막의 광전도성에 관한 수소 플라즈마 표면 처리의 효과)

  • Sung-Hoon, Kim
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.337-350
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    • 1999
  • Thick diamond film having ~700${\mu}{\textrm}{m}$ thickness was deposited on polycrystalline molybdenum (Mo) substrate using high power (4kW) microwave plasma enhanced chemical vapor deposition (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconductivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

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Effect of hydrogen plasma treatment on the photoconductivity of free-standing diamond film

  • Kim, Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.4
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    • pp.441-445
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    • 1999
  • Thick diamond film having $~700\mu\textrm{m}$ thickness was deposited on polycrystalline molybdenum(Mo) substrate using high power (4 kW) microwave plasma-enhanced chemical vapor depostion (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconcuctivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

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Form of Molybdenum in the Carbonaceous Black Slates of the Ogcheon Belt (옥천대 탄질 흑색 점판암내 몰리브덴의 존재 형태)

  • 정기영;이석훈
    • Journal of the Mineralogical Society of Korea
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    • v.14 no.1
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    • pp.52-57
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    • 2001
  • 옥천대의 탄질 흑색 점파암에 최대 1000 ppm까지 부화되어 있는 몰리브덴의 광물학적 존재형태를 밝히기 위하여 충청북도 괴산군 덕평지역 흑색점판암에 대하여 박편제작, X선회절분석, 중성자활성화학분석, 주사전자현미경관찰, 에너지분산 X선분석, 파장분산 X선분석 등을 실시하였다. 그결과 몰리브덴은 두께 $1~2\mu$m 정도의 극미립 엽상 휘수연석($MoS_2$)으로 존재함이 판명되었다. 휘수연석은 흔히나이트의 포획물로 산출된다. 탄질흑색 점판암에 우라늄 및 바다듐과 함께 다량의 몰리브덴이 함유되어 있음에도 과거의 연구에서 그 존재형태가 규명되지 않은원인은, 극미립 휘수연석이 불투명한 세립 탄질기질에 분산 분포하기 때문이다.

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The development of high brightness IPS mode for LCD Monitors

  • Kang, In-Byeong;Youn, Won-Gyun;Cho, So-Haeng;Song, In-Duk;Ahn, In-Ho;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.11-12
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    • 2000
  • An 18.1" Thin Film Transistor Liquid Crystal Display (TFT LCD) monitor adopting high brightness In Plane Switching (IPS) technology was realized. While conventional IPS structure used a Chromium (Cr) and Molybdenum (Mo) for a drain electrode, Indium Tin Oxide (ITO) was proposed and verified in this paper. Black sticky micropeal spacers were introduced for the reduction of light scattering phenomena, which was observed at dark room with the conventional micropeal spacers. With the proposed method, more than 10 % aperture ratio was increased and the excellent image quality was obtained.

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Design and fabrication of film Bulk Acoustic Resonator for flexible Microsystems (Flexible 마이크로시스템을 위한 압전 박막 공진기의 설계 및 제작)

  • 강유리;김용국;김수원;주병권
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1224-1231
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    • 2003
  • This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91%.

Tandem white organic light emitting diodes comprising of red, green, blue emission

  • Yang, Jung-Jin;Suman, C.K.;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.820-822
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    • 2009
  • Tandem white organic light emitting diodes (WOLEDs) are fabricated by using a transparent interconnecting layer of Al:LiF composite/molybdenum oxides ($MoO_3$). We demonstrate two types of tandem WOLEDs consisting of two color emissions (red and blue emission) and three color emissions (red, green and blue emission). Tandem WOLED consisting of three color emission shows higher external quantum efficiency and current efficiency.

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Synthesis of Diamond films for Radiation Detector (방사선 검출기용 다이아몬드 막의 합성)

  • 박상현;김정달;박재윤;김경환;구효근;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.366-369
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    • 1999
  • Synthetic diamond films have been deposited on the silicon(100) surface and molybdenum substrates using an microwave plasma enhanced vapor deposition (MWPECVD) method. The effect of deposition time, surface morphology, X-ray diffraction pattrm, infrared transmittance and Raman Scattering have been studied, The diamond film deposited on Mo substrate for (100) hours at 40 torr H$_2$-CH$_4$O$_2$ gas system have been shown 1${\mu}{\textrm}{m}$/h of growth rate and good crystallization

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Semi-analytical Modeling of Transition Metal Dichalcogenide (TMD)-based Tunneling Field-effect Transistors (TFETs)

  • Huh, In
    • Proceeding of EDISON Challenge
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    • 2016.03a
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    • pp.368-372
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    • 2016
  • In this paper, the physics-based analytical model of transition metal dichalcogenide (TMD)-based double-gate (DG) tunneling field-effect transistors (TFETs) is proposed. The proposed model is derived by using the two-dimensional (2-D) Landauer formula and the Wentzel-Kramers-Brillouin (WKB) approximation. For improving the accuracy, nonlinear and continuous lateral energy band profile is applied to the model. 2-D density of states (DOS) and two-band effective Hamiltonian for TMD materials are also used in order to consider the 2-D nature of TMD-based TFETs. The model is validated by using the tight-binding non-equilibrium Green's function (NEGF)-based quantum transport simulation in the case of monolayer molybdenum disulfide ($MoS_2$)-based TFETs.

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