• Title/Summary/Keyword: Mode-coupling

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Satellite finite element model updating for the prediction of the effect of micro-vibration (미소진동 영향성 예측을 위한 인공위성 유한요소모델 보정)

  • Lim, Jae Hyuk;Eun, Hee-Kwang;Kim, Dae-Kwan;Kim, Hong-Bae;Kim, Sung-Hoon
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.42 no.8
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    • pp.692-700
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    • 2014
  • In this work, satellite FE (finite element) model updating for the prediction of the effect of micro-vibration is described. In the case of satellites launched in low earth orbit, high agility and more mission accomplishments are required by the customer in order to procure many images from satellites. To achieve the goal, many mechanisms, including high capacity wheels and antennas with multi-axis gimbals have been widely adopted, but they become a source of micro-vibration which could significantly deteriorate the quality of images. To investigate the effect due to the micro-vibration in orbit on the ground, a prediction is conducted through an integrated model coupling the measured jitter sources with FE (finite element) model. Before prediction, the FE model is updated to match simulation results with the modal survey test. Subsequently, the quality of FE model is evaluated in terms of frequency deviation error, the resemblance of mode shapes and FRFs (frequency response functions) between test and analysis.

Analysis of Subwavelength Metal Hole Array Structure for the Enhancement of Quantum Dot Infrared Photodetectors

  • Ha, Jae-Du;Hwang, Jeong-U;Gang, Sang-U;No, Sam-Gyu;Lee, Sang-Jun;Kim, Jong-Su;Krishna, Sanjay;Urbas, Augustine;Ku, Zahyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.334-334
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    • 2013
  • In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

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Optimal Operation Algorithm of Protection Devices in Distribution Systems With PV System (대용량 태양광전원이 연계된 배전선로에 있어서 보호협조기기의 최적 운용알고리즘)

  • Kwon, Soon-hwan;Lee, Hu-dong;Nam, Yang-hyun;Rho, Dae-seok
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.5
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    • pp.17-26
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    • 2018
  • If a photovoltaic (PV) system is installed in a primary feeder interconnected with the PV system, bi-directional power flow can occur, and then, the magnitude and direction of the fault current can change, depending on the fault location and point of common coupling (PCC) of the PV system, and the time current curve (TCC) cannot be properly coordinated between protection devices. Also, it is difficult to obtain a proper time interval for protection devices because the conventional setting approach is applied, even though the PV system is installed and operating. Therefore, this paper presents three operation modes considering the operational conditions of the PV system to obtain setting values for protection devices. Based on the mode, this paper proposes an algorithm to calculate the optimal protection coordination time interval according to the introduction capacity of the PV system. In addition, this paper performs modelling of a distribution system with the PV system and protection devices by using Off-DAS S/W, and analyzes the characteristics of the time interval between the protection devices, such as substation relays, reclosers, customer relays, and PV customer relays. The simulation results confirmed that the proposed operational modes and setting-value algorithms are useful and effective for protection coordination in a distribution system for a PV system.

Traveling-wave Ti:LiNbO3 optical modulator capable of complete switching (완전 스위칭이 가능한 Ti:LiNbO3 진행파 광변조기)

  • 곽재곤;김경암;김영문;정은주;피중호;박권동;김창민
    • Korean Journal of Optics and Photonics
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    • v.14 no.5
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    • pp.545-554
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    • 2003
  • Design of the optical modulator composed of a three-waveguide coupler and CPW traveling-wave electrodes was carried out. Switching phenomena of three-waveguide couplers were analyzed by using the coupled mode theory, and the coupling-lengths of the devices were calculated by means of the FDM. CPW traveling-wave electrodes were analysed by the CMM and SOR simulation technique in order to find the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electrolyte technique. The fabricated modulator chip was end-polished, pig-tailed and packaged in a brass mount with K-connector. The insertion loss and the switching voltage of the optical modulator were about 4㏈ and 19V, respectively. Network analyzer was used to obtain the S parameter and the corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted to be Z$_{c}$= 45 Ω, N$_{eff}$=2.20, and $\alpha$$_{0}$=0.055/cm√GHZ. The measured optical response R($\omega$) was compared with the theoretically estimated one, showing both responses agree well. The measurement results revealed that 3㏈ bandwidth turned out to be about 13 GHz.

Ti:LiNbO3 three-waveguide type traveling-wave optical modulator; outer fed, anti-symmetrical Detuning (Ti:LiNbO3 세 도파로형 진행파 광변조기;바깥입사, 반대칭 Detuning)

  • 이우진;정은주;피중호;김창민
    • Korean Journal of Optics and Photonics
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    • v.15 no.4
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    • pp.375-384
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    • 2004
  • Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

Analysing the Narrative Strategy of Co-produced Transnational Romance Films (한일 공동제작 초국적 로맨스 영화의 내러티브 전략분석)

  • Cho, Jin-Hee
    • The Journal of the Korea Contents Association
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    • v.16 no.7
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    • pp.598-608
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    • 2016
  • This paper attempts to analyze the narrative strategy of co-produced transnational romance films, (2007) and (2010). These films were produced during the heyday of Korean wave, the phenomenon Korean popular culture enjoys overseas fandom. Coupling Korean male star with Japanese female star, and dramatizing their romance, the industries attempted to attract the nations' cultural consumers. International co-production has been considered as a mode of production strategic enough to penetrate into neighboring nations. One of the major benefits of international co-production is to cope with 'cultural discount' between nations. Since producers and directors from different cultural background can participate in the creative process and share ideas, they can devise quite strategic form and content to please culturally heterogeneous consumers. Korea and Japan have long been in socio-political conflict, which makes it crucial for these films' cultural producers not to stir spectators' nationalism. In other words, these films' cultural producers had to develop a narrative strategy not to analogize nations' political reality. This paper, therefore, aims to analyze the narrative structure of these films, and to specify narrative strategy in detail.

EFFECTS OF RESIN CEMENTS, CERAMIC SURFACE TREATMENTS AND THERMOCYCLING ON SHEAR BOND STRENGTH OF IPS EMPRESS CERAMIC (레진시멘트, 표면처리 및 열순환에 따른 IPS Empress의 전단결합강도)

  • Han, Jeong-Min;You, Young-Dae;Lee, Yong-Keun;Im, Mi-Kyung;Lee, Su-Jong
    • Restorative Dentistry and Endodontics
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    • v.24 no.3
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    • pp.473-481
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    • 1999
  • This study evaluated the shear bond properties of IPS Empress glass ceramic to enamel and dentin surfaces with three ceramic surface treatments, and three resin cements. The influence of thermocycling was also investigated. The purpose of this study was to investigate the influences of resin cements, ceramic surface treatments, and thermocycling on shear bond properties. Ninety freshly extracted, noncarious human molars were selected for this study. The surface treatments of ceramic were etching <5.0% hydrofluoric acid, application of silane coupling agents(Tokuso Ceramic Primer, Clearfil porcelain bond, Monobond-S), and the combination of the two methods. Empress cylinders were bonded to enamel and dentin surfaces with three kinds of resin cements(Bistite resin cement, Panavia 21, Variolink). The specimens were aged in $37^{\circ}C$ distilled water for 24 hours. Half of the specimens were then thermocycled 500times between $5^{\circ}C$ and $55^{\circ}C$ with a dwell time of 15 seconds. Each specimen was debonded in shear mode and measured shear bond properties by using the universal testing machine(Zwick 020, Germany). The data were analyzed by SPSS/PC+(one-way ANOVA, Scheffe' s test and t-test). The results were as follows : 1. Without thermocyling, there was significant difference of shear bond strength to enamel surface between Bistite Resin Cement and Panavia 21 in case of etched and silane-treatment(p<0.05). 2. Without thermocyling, the shear bond strength of a group treated with silane and etching was significantly higher than that of a group treated with silane or etching with the application of Panavia 21 and Variolink(p<0.05). 3. A group treated with etching with the application of Variolink only showed a decrease of shear bond strength after thermocycling(p<0.05).

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Kilohertz Gain-Switched Ti:sapphire Laser Operation and Femtosecond Chirped-Pulse Regenerative Amplification (KHz 반복률에서의 Ti:sapphire 이득 스위칭 레이저 발진과 펨토초 처프펄스 재생 증폭)

  • Lee, Yong-In;Ahn, Yeong-Hwan;Lee, Sang-Min;Seo, Min-Ah;Kim, Dai-Sik;Rotermund, Fabian
    • Korean Journal of Optics and Photonics
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    • v.17 no.6
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    • pp.556-563
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    • 2006
  • We present a comprehensive study of a chirped pulse Ti:sapphire regenerative amplifier system operating at 1 kHz. Main constituents of the system are described in detail. The amplifier stage was first converted to a repetition rate-tunable kHz gain-switched nanosecond Ti:sapphire laser. Operation characteristics at different repetition rates such as build-up times of laser pulses, pump power-dependent output powers and pulse durations, damage thresholds, and tunability ranges were studied. Based on the results achieved, the switching time of the Pocket's cell used and the round trip numbers in the regenerative amplifier were optimized at 1 kHz. The output pulses with a pulse width of 50fs from a home-made Ken lens mode-locked Ti:sapphire oscillator were used as seed pulses. The pulses were expanded to 120ps in a grating stretcher prior to coupling into the 3-mirror amplifier cavity. After amplification and recompression, a stable 1kHz Ti:sapphire regenerative amplifier system, which delivers 85-fs, $320-{\mu}J$ pulses, was fully constructed.

The intrinsic instabilities of fluid flow occured in the melt of Czochralski crystal growth system

  • Yi, Kyung-Woo;Koichi Kakimoto;Minoru Eguchi;Taketoshi Hibiya
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.179-200
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    • 1996
  • The intrinsic instabilities of fluid flow occurred in the melt of the Czochralski crystal growth system Czochralski method, asymmetric flow patterns and temperature profiles in the melt have been studied by many researchers. The idea that the non-symmetric structure of the growing equipment is responsible for the asymmetric profiles is usually accepted at the first time. However further researches revealed that some intrinsic instabilities not related to the non-symmetric equipment structure in the melt could also appear. Ristorcelli had pointed out that there are many possible causes of instabilities in the melt. The instabilities appears because of the coupling effects of fluid flow and temperature profiles in the melt. Among the instabilities, the B nard type instabilities with no or low crucible rotation rates are analyzed by the visualizing experiments using X-ray radiography and the 3-D numerical simulation in this study. The velocity profiles in the Silicon melt at different crucible rotation rates were measured using X-ray radiography method using tungsten tracers in the melt. The results showed that there exits two types of fluid flow mode. One is axisymmetric flow, the other is asymmetric flow. In the axisymmetric flow, the trajectory of the tracers show torus pattern. However, more exact measurement of the axisymmetrc case shows that this flow field has small non-axisymmetric components of the velocity. When fluid flow is asymmetric, the tracers show random motion from the fixed view point. On the other hand, when the observer rotates to the same velocity of the crucible, the trajectory of the tracer show a rotating motion, the center of the motion is not same the center of the melt. The temperature of a point in the melt were measured using thermocouples with different rotating rates. Measured temperatures oscillated. Such kind of oscillations are also measured by the other researchers. The behavior of temperature oscillations were quite different between at low rotations and at high rotations. Above experimental results means that the fluid flow and temperature profiles in the melt is not symmetric, and then the mode of the asymmetric is changed when rotation rates are changed. To compare with these experimental results, the fluid flow and temperature profiles at no rotation and 8 rpm of crucible rotation rates on the same size of crucible is calculated using a 3-dimensional numerical simulation. A finite different method is adopted for this simulation. 50×30×30 grids are used. The numerical simulation also showed that the velocity and flow profiles are changed when rotation rates change. Futhermore, the flow patterns and temperature profiles of both cases are not axisymmetric even though axisymmetric boundary conditions are used. Several cells appear at no rotation. The cells are formed by the unstable vertical temperature profiles (upper region is colder than lower part) beneath the free surface of the melt. When the temperature profile is combined with density difference (Rayleigh-B nard instability) or surface tension difference (Marangoni-B nard instability) on temperature, cell structures are naturally formed. Both sources of instabilities are coupled to the cell structures in the melt of the Czochralski process. With high rotation rates, the shape of the fluid field is changed to another type of asymmetric profile. Because of the velocity profile, isothermal lines on the plane vertical to the centerline change to elliptic. When the velocity profiles are plotted at the rotating view point, two vortices appear at the both sides of centerline. These vortices seem to be the main reason of the tracer behavior shown in the asymmetric velocity experiment. This profile is quite similar to the profiles created by the baroclinic instability on the rotating annulus. The temperature profiles obtained from the numerical calculations and Fourier transforms of it are quite similar to the results of the experiment. bove esults intend that at least two types of intrinsic instabilities can occur in the melt of Czochralski growing systems. Because the instabilities cause temperature fluctuations in the melt and near the crystal-melt interface, some defects may be generated by them. When the crucible size becomes large, the intensity of the instabilities should increase. Therefore, to produce large single crystals with good quality, the behavior of the intrinsic instabilities in the melt as well as the effects of the instabilities on the defects in the ingot should be studied. As one of the cause of the defects in the large diameter Silicon single crystal grown by the

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