• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.535-538
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• 2005

We report the influence of the threshold voltage and mobility fluctuation in TFT on current mode digital circuit performance. We found that the threshold voltage showed more serious circuit malfunction. We studied new circuit configuration for improvement.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.15 no.1
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• pp.114-130
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• 2021

With the drastic growth of Information and Communication Technology (ICT) industry, global energy consumption is exponentially increased by mobile communications. The huge energy consumption and increased environmental awareness have triggered great interests on the research of dynamic distribution of cell user and traffic, and then designing the energy efficient cellular network. In this paper, we explore the temporal and spatial characteristics of human mobility and traffic distribution using real data set. The analysis results of cell traffic illustrate the tidal effect in temporal and spatial dimensions and obvious periodic characteristics which can be used to design Base Station (BS) dynamic with sleeping or shut-down strategy. At the same time, we designed a new Cell Zooming and BS cooperation mode. Through simulation experiments, we found that running in this mode can save about 35% of energy consumption and guarantee the required quality of service.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.81-92
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• 1990

We developed the technologies of wuperlattice and HEMT structures grown by MOCVD, and their characterization. In the case of GaAs/AlGaAs superlattice, the periodicity, interface abruptness and Al compositional uniformity were confirmed through the shallow angle lapping technique and double crystal x-ray measurement. Photoluminesence spectra due to quantum size effect of isolated quantum wells were also observed. The heterojunction abruptness was estimated to be within 1 monolayer fluctuation by the analysis of the relation between PL FWHM(Full Width at Half Maximum) and well width. HEMT structure was successfully grown by MOCVD. The 2 dimensional electron gas formation at heterointerface in HEMT structure were evidenced through the C-V profile, SdH (Shubnikov-de Haas)oscillation and low temperature Hall measurement. Low field mobility were as high as $69,000cm^2/v.sec$ for a sheet carrier density of $5.5{\times}10^{11}cm^-2$ at 15K, and $41,200cm^2/v.sec$ for a sheet carrier density of $6.6{\times}10^{11}cm^-2$ at 77K. In addition, well defined SdH oscillation and quantized Hall plateaues were observed.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.416-422
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• 2007

Prime movers in most large merchant ships adapt two stroke low speed diesel engine which has higher efficiency, mobility and durability. However, severe torsional vibration in these diesel engines may be induced by higher fluctuation of combustion pressures. Consequently, it may lead sometimes to propulsion shafting failure due to the accumulated fatigue stresses. Shaft fatigue strength analysis had been done traditionally in time domain but this method is complicated and difficult in analysing bi-modal vibration system such as the case of cylinder misfiring condition. In this paper authors introduce an assessment method of fatigue strength estimation for propulsion shafting system with two stroke low speed diesel engine in the frequency domain.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.85-90
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• 2012

In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.14-25
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• 1995

The main contribution of this paper can be summarized in two items as follws. Firstly, a modelling of mobile communication channel with Rayleigh fading characteristics is presented. Actual signal environments can be approximated as being real measurements by a proper mathematical representation of fluctuation of channel parameters due to Doppler effect, that is determined by the relative speed between transmitter and receiver, and noises, that vary at each sampling time. Secondly, an alternative procedure of synthesizing an adaptive equalizers is presented for recovering original signals that have been corrupted through the modelled channel. In order to compute the optimal tap coefficients for a high speed data(512 k symbol/sec) on a real-time basis, the CGM that guarantees fast and stable convergency is adopted during the training period of each frame. The coefficients obtained by the CGM are used as initial values for the LMS algorithm to trace the optimal coefficients during the data period that vary at each sampling time due to the mobility and noise at the receiver. Using the modelling presented in this paper, distributions of received signal power in various signal environments are demonstrated. The performance of the eqalizer proposed in this paper is shown as a function of BER under the various signal circumstances of mobile communications.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.487-492
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• 2008

In this paper, Thermocatalytic decomposition of methane in a fluidized bed reactor (FBR) was studied. The technical approach is based on a single-step decomposition of methane over carbon catalyst in air/water vapor free environment. The factors affecting methane decompostion catalyst activity in methane decomposition reactions were examined. The fluidization phenomena in a gas-fluidized bed of catalyst was determined by the analysis of pressure fluctuation properties, and the results were confirmed with characteristics of methane decomposition. The effect of parameters on the H2 yield was examined for methane decompostion. The decompstion rate was affected by the fluidization quality such as mobility, U-Umf, carbon attrition, elutriation and effectiveness density of fluidization gas.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.10
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• pp.4886-4907
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• 2019

The use of mobile devices is increasing in multimedia applications. The multimedia contents are delivered to mobile users over heterogeneous networks. Due to fluctuation in bandwidth and user mobility, the service providers are facing difficulties in providing Quality of Service (QoS) guaranteed delivery for multimedia applications. Multimedia applications depend on QoS parameters such as delay, bandwidth, and jitter to offer better user experience. The existing schemes use the single source and multisource delivery but are unable to balance between stream quality and network congestion for mobile users. We proposed a Quality Oriented Multimedia Content Delivery Scheme (QOMCDS) for the mobile cloud to deliver better quality multimedia contents for the mobile user. The multimedia contents are delivered to the mobile device based on the device's parameters and network environment. The objective video quality assessment models like Peak Signal-to-Noise Ratio (PSNR), Structural Similarity (SSIM), and Video Quality Measurement (VQM) are used to measure the quality of the video. The client side Quality of Experience metric such as Startup delay, Rebuffering events, and Bitrate switch count was used for evaluation. The proposed scheme is evaluated using dash.js and is compared to existing schemes. The results show significant improvement over existing multimedia content delivery schemes.