• Title/Summary/Keyword: MoSe2

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Preperation of CuInSe2 Nanoparticles by Solution Process Using Precyrsors

  • Choe, Ha-Na;Lee, Seon-Suk;Jeong, Taek-Mo;Kim, Chang-Gyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.376-376
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    • 2011
  • I-III-VI2 chalcopyrite compounds, particularly copper, indium, gallium selenide(Cu(InxGa1-x)Se2, CIGS), are effective light-absorbing materials in thin-film solar application. They are direct band-gap semiconductors with correspondingly high optical absorption coefficients. Also they are stable under long-term excitation. CIS (CIGS) solar cell reached conversion efficiencies as high as 19.5%. Several methods to prepare CIS (CIGS) absorber films have been reported, such as co-evaporation, sputtering, selenization, and electrodeposition. Until now, co-evaporation is the most successful technique for the preparation of CIS (CIGS) in terms of solar efficiency, but it seems difficult to scale up. CIS solar cells have been hindered by high costs associated with a fabrication process. Therefore, inorganic colloidal ink suitable for a scalable coating process could be a key step in the development of low-cost solar cells. Here, we will present the preparation of CIS photo absorption layer by a solution process using novel metal precursors. Chalcopyrite copper indium diselenide (CuInSe2) nanocrystals ranging from 5 to 20nm in diameter were synthesized by arrested precipitation in solution. For the fabrication of CIS photo absorption layer, the CuInSe2 colloidal ink was prepared by dispersing in organic solvent and used to drop-casting on molybdenum substrate. We have characterized the nanoparticless and CIS layer by XRD, SEM, TEM, and ICP.

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Hydrothermal Synthesis, Characterization and Improved Activity of a Visible-Light-Driven ZnSe-Sensitized TiO2 Composite Photocatalyst

  • Zhu, Lei;Peng, Mei-Mei;Cho, Kwang Youn;Ye, Shu;Sarkar, Sourav;Ullah, Kefayat;Meng, Ze-Da;Oh, Won-Chun
    • Journal of the Korean Ceramic Society
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    • v.50 no.6
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    • pp.504-509
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    • 2013
  • In this study, ZnSe-$TiO_2$ composites were synthesized by a facile hydrothermal-assisted sol-gel process and characterized by nitrogen adsorption isotherms (77 K), X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis, transmission electron microscopy (TEM) and UV-vis diffuse reflectance spectrophotometry. The photocatalytic activity was investigated by decoloration methylene blue (MB), methyl orange (MO), and rhodamine B (Rh.B) in an aqueous solution under visible light irradiation. The results revealed that the photocatalytic activity of the ZnSe-$TiO_2$ photocatalyst was much higher than that of pure$TiO_2$. The ZnSe nanoparticles, which act as a photosensitizer, not only extend the spectral response of $TiO_2$ to the visible region but also reduce charge recombinations.

Co-evaporator를 이용하여 제작한 CIGS Precursor Stack 구조 및 RTP 조건에 따른 Selenization 효과에 관한 연구

  • Kim, Chan;Kim, Dae-Hwan;Seong, Si-Jun;Gang, Jin-Gyu;Lee, Il-Su;Do, Jin-Yeong;Park, Wan-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.404-405
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    • 2011
  • Cu(InGa)$Se_2$ (CIGS) 박막 태양전지의 저가 및 대면적화를 위한 양산화 공정인 two-step process (sputter/selenization) 공정에서는 sputtering으로 형성한 metal precursor stack을 $H_2$ Se gas를 이용하여 selenization하는 공정을 주로 이용한다. 하지만 이러한 selenization 공정은 유독한 $H_2$ Se gas를 이용해야 한다는 점과 긴 시간 동안 열처리를 해야 하는 단점을 가지고 있다. 이에 metal precursor stack 위에 Se 막을 우선 증착하고, Rapid Thermal Process (RTP)를 이용하여 selenization하는 방법이 현재 많은 관심을 끌고 있다. 본 논문에서는 sputtering 이후 RTP를 이용한 CIGS 흡수층 제작에 대한 선행연구의 일환으로 co-evaporator 장비를 이용하여 다양한 구조의 precursor를 제작하고 RTP 조건에 따른 selenization 효과를 연구하였다. Co-evaporator를 이용하여 CIGS, CIG/Se, CuGa/In/Se, In/CuGa/Se 4가지 구조의 precursor stack을 Mo coated soda lime glass 위에 제작하였다. 이때 amorphous 상태의 precursor stack을 만들기 위하여 기판에 열은 가하여 주지 않았으며, 각각의 stack 구조에서 가지고 있는 Cu, In, Ga, Se의 총량을 동일하게 유지하기 위하여 각 stack의 증착 시간을 동일하게 유지하였다. Selenization을 위한 RTP 조건은 550, $600^{\circ}C$ 각각에 대하여 1, 5, 10분으로 split을 진행하였다. Precursor stack의 증착 후 관찰한 XRD 결과는 비정질 상태를 잘 나타내었으며, SEM 결과 CIGS precursor stack을 제외한 나머지 구조의 stack에서는 In 박막의 surface roughness로 인하여 박막의 평탄화가 좋지 않음을 확인하였다. CIGS precursor stack의 경우, RTP 온도와 시간 split와 상관없이 결정화가 잘 이루어졌으나 grain의 성장이 부족하였다. 이에 비하여 CIG/Se, CuGa/In/Se, In/CuGa/Se 구조의 precursor stack의 경우, $550^{\circ}C$ 열처리에서는 InSe의 결정상이 관찰 되었으며 $600^{\circ}C$, 5분 이상 열처리에서 CIGS 결정상이 관찰되었다. 이러한 결과는 Se이 metal 원소들과 함께 있는 CIGS 구조에 비하여 metal precursor stack 위에 Se을 증착한 stack 구조들의 경우는 CIGS 결정을 형성하기 위해 Se이 metal 층들로 확산되어 반응을 하여야 하므로 상대적으로 많은 열에너지가 필요한 것으로 이해할 수 있으며, RTP를 이용한 selenization 공정으로 CIGS 박막 태양전지의 흡수층 형성이 가능함을 확인하였다.

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반응성 스퍼터의 Se Cracker Reservoir Zone 온도에 따른 특성분석

  • Kim, Ju-Hui;Park, Rae-Man;Kim, Je-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.585-585
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    • 2012
  • $Cu(In_{1-x}Ga_x)Se_2$(CIGS) 박막 태양전지는 Chalcopyrite 계 박막 태양전지로 Cu, In, Ga, Se 각 원소의 조성을 적절히 조절하여 박막을 성장시킨다. 성장시킨 CIGS 박막은 광흡수계수가 $10^5cm^{-1}$로 다른 물질보다 뛰어나고 직접 천이형 반도체로서 얇은 두께로도 고효율의 박막 제작이 가능하다. CIGS 태양전지를 제조하는 방법은 3-stage 동시 증착법, 금속 전구체의 셀렌화 공정법, 전기 증착법 등이 있다. 그 중에 금속 전구체의 셀렌화 공정법은 다른 제조 방법에 비해 대면적 생산에 유리한 장점이 있다. 하지만 아직 상대적으로 3-stage 동시 증착법에 비해 낮은 에너지 변환 효율이 보고된다. 본 실험에서는 기존의 금속 전구체의 셀렌화 공정법과는 달리 전구체 증착과 셀렌화 공정을 동시에 하고, Se cracker를 통하여 Se 원료를 주입하는 방식인 반응성 스퍼터링 공정에서 reservoir zone의 온도 변화에 따른 특성을 분석하였다. Se cracker의 reservoir zone 온도가 증가할수록 Cu/(In+Ga) 비가 증가한다. CIGS 박막 태양전지의 구조는 Al/Ni/ITO/i-ZnO/CdS/CIGS/Mo/Soda lime glass이다. CIGS 박막의 조성비가 Cu/(In+Ga)=0.89, Ga/(In+Ga)=0.17인 박막 태양전지에서 개방전압 0.34 V, 단락전류밀도 $32.61mA/cm^2$, 충실도 56.2% 그리고 변환 효율 6.19%를 얻었다. 본 연구는 2011년도 지식경제부의 재원으로 한국에너지 기술평가원(KTEP)의 지원을 받아 수행한 연구 과제입니다(No.20093020010030).

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Studies on Effect of S/Se Ratio on the Properties of Cu2ZnSn(SxSe1-x)4 (CZTSSe) Thin Films by Sulfo-Selenization of Stacked Precursor Thin Films (열처리 시 S/Se 분말 비율에 따른 Cu2ZnSnSe4 (CZTSSe) 박막의 합성 및 특성 평가)

  • Gang, Myeng Gil;He, Ming Rui;Hong, Chang Woo;Kim, Jin Hyeok
    • Current Photovoltaic Research
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    • v.2 no.4
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    • pp.177-181
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    • 2014
  • $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) absorber thin films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu precursor thin films. The Zn-Sn-Cu precursor thin films were sulfo-selenized inside a graphite box containing S and Se powder using rapid thermal processing furnace at $540^{\circ}C$ in Ar atmosphere with pre-treatment at $300^{\circ}C$. The effect of different S/Se ratio on the structural, compositional, morphological and electrical properties of the CZTSSe thin films were studied using XRD (X-ray diffraction), XRF (X-ray fluorescence analysis), FE-SEM (field-emission scanning electron microscopy), respectively. The XRD, FE-SEM, XRF results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the S/Se composition ratio. In particular, the CZTS thin film solar cells with S/(S+Se)=0.25 shows best conversion efficiency of 4.6% ($V_{oc}$ : 348 mV, $J_{sc}$ : $26.71mA/cm^2$, FF : 50%, and active area : $0.31cm^2$). Further detailed analysis and discussion for effect of S/Se composition ratio on the properties CZTSSe thin films will be discussed.

Electrodeposition of CuInSe2 Photovoltaic Thin Films and Growth Morphology (CuInSe2 태양전지 박막의 전해증착 및 성장형상)

  • Gho, Jung-Hwan;Kim, Myung-Han
    • Korean Journal of Materials Research
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    • v.20 no.1
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    • pp.12-18
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    • 2010
  • $CuInSe_2$ (CIS) thin films were electrodeposited on Mo-coated glass substrates in acidic solutions containing $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ ions, depending on deposition parameters such as deposition potential (-0.4 to -0.8 V[SCE]) and pH (1.7 to 1.9). The influences of PH and deposition potential on the atomic composition of Cu, In, and Se in the deposited films were observed. The best chemical composition, approaching 1:1:2 atomic ratio for the elements, was achieved at -0.5 V (SCE) and pH 1.8. The as-deposited films showed low crystallinity and were annealed at 300 to $500^{\circ}C$ for 30 min to improve crystallization. The surface morphologies, microstructures, and crystallographic structures of the annealed films as well as the as-deposited films were analyzed with AFM, SEM, and XRD. The defects of spherical particles appeared on the surfaces of CIS thin films in the as-deposited state and decreased in size and number with increasing annealing temperatures. Additionally, the crystallization to chalcopyrite structure and surface roughness (Ra) of the as-deposited thin films were improved with the annealing process.

Mineral Phase Transitions of Jarosite Substituted by Oxyanions during the Reductive Dissolution Using Oxalate Solution (옥살레이트 용액을 이용한 환원성 용해 시 산화음이온으로 치환된 자로사이트의 광물 상변화)

  • Lee, Myoungsin;Lee, Dongho;Chun, Herin;Kim, Yeongkyoo;Baek, YoungDoo
    • Korean Journal of Mineralogy and Petrology
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    • v.34 no.2
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    • pp.95-106
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    • 2021
  • The SO4 in the jarosite structure can be substituted by other oxyanions, and therefore, the transition of jarosite to goethite plays a very important role in controlling the behavior of oxyanions. In this study, the phase change according to the species of the oxyanion in jarosite and the related behavior of the oxyanion was studied by mineralogical and geochemical methods when jarosite, which is coprecipitated with various oxynions, undergoes a phase change by a reductive dissolution. Jarosite substituted by five oxyanions by 5 mol% was used in this study. The mineral phase change induced by reductive dissolution using ammonium oxalate was investigated, and the order of phase transition rate of jarosite to goethite was MoO4-jarosite ≥ SeO4-jarosite ≥ CrO4-jarosite > pure jarosite > SeO3-jarosite > AsO4-jarosite, showing that the transition rates vary depending on the substituted oxyanion. The resultant concentration of the leached Fe was slightly different depending on the type of oxyanion and time but did not show a noticeable difference. The concentration of each oxyanion leached according to the change of the mineral phase showed that the order of concentration of oxyanions was Mo > Se(SeO3) > As > Se(SeO4) > Cr in general, and showed a slight increase with time. This trend was related to the species of oxyanions rather than mineral phase change. The results of this study showed that the phase transition of jarosite to goethite was affected by the species of oxyanions, but this tendency did not affect the concentrations leached oxyanions.

Electrodeposition of Cu(InxGa(1-x))Se2 Thin Film (CIGS 박막의 전착에 관한 연구)

  • Lee, Sang-Min;Kim, Young-Ho;Oh, Mi-Kyung;Hong, Suk-In;Ko, Hang-Ju;Lee, Chi-Woo
    • Journal of the Korean Electrochemical Society
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    • v.13 no.2
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    • pp.89-95
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    • 2010
  • The chalcopyrite $Cu(In_xGa_{(1-x)})Se_2$ (CIGS) is considered to be one of the effective light-absorbing materials for thin film photovoltaic solar cells. We describe the electrodeposition of CIGS thin films in ambient laboratory conditions, and suggest the electrochemical conditions to prepare stoichiometric CIGS thin films of Ga/(In + Ga) = 0.3. In acidic solutions containing $Cu^{2+}$, $In^{3+}$, $Ga^{3+}$ and $Se^{4+}$ ions, the CIGS films of different Cu/In/Ga/Se chemical compositions were electrodeposited onto Mo/Glass substrate. The structure, morphology and chemical composition of electrodeposited CIGS films were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), and Energy dispersive X-ray spectroscopy (EDS), respectively.