• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.149-154
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• 2000

Bi-layer Mo films were deposited on soda-lime glass substrates using DC magnetron supttering. Increasing gas pressure, the resistivity varied from $1\times10^{-5}\; to\; 8.3\times10^{-3}\; \Omega.cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The micro-structure of the compressively-stressed film which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. The impurity levels in the Mo film exhibited highly concentrated Na, Se and O elements due to less dense micro-structure. The degree of Na diffusion depends on the type of the glass substrate used and the nature of the Mo film.

• Tribology and Lubricants
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• v.10 no.4
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• pp.43-50
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• 1994

In order to elucidate the effects of co-existing additives (S$_{8}$, TBP: Tri butyl phosphate, ZnDTP: Zinc-dialkyl dithiophosphate) and the role of reacted surface film on the friction behavior of MoDTP (molybdenum dialkyl dithiophosphate), a friction experiment using a dual circular pipe edge surface type friction tester and XPS (X-ray photoelectronic spectrum) surface analysis were conducted. Friction reduction with MoDTP lubricant was proved to be greatly influenced by co-existing additive species. It was dependent on the properties of the film formed through the reaction between the additive and the surface. Phosphate film reduced the friction coefficient of MoDTP through suppression of diffusion of Mo compounds towards the metal substrate. On the other hand, sulfate film, which is inherently rich in lattice defects, did not lead to any appreciable friction reduction with MoDTP since the diffusion of the Mo compound towards the metal substrate was not effectively suppressed. With ZnDTP additive, the sulfide film formed through decomposition greatly influenced the lubricating performance of MoDTP. As such, properties of surface films formed from additives were proved to yield significant influence on the lubrication performance of MoDTP.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.218-221
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• 2006

The photovoltaic properties of CIES cells on alumina substrate were improved by using the Na-doped Mo as theabotom layer of hilo back contact. Na was supplied to the CIGS bulk region from alumina/Na-doped Mo/Mo/alumina? structure, as same assimilar to the Na diffusion from soda-lime glass. The content diffusion of Na from Na-doped bfo was smaller more controlled than that from SLG. These Our results indicate that Na-doped bfo act as Na source material and contents of Na amount can be controlled without the use of an alkali barrier layer. The best CIGS solar cell with conversion efficiency of 13.34%, $J_{sc}=34.62mA/cm^2,\;V_{oc}=0.58V$ and FF=66% for an active area of $0.45cm^2$ on the alumina substrate was obtained in the condition of for 100nm Na-doped Mo/1000nm Mo.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.37-37
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• 2002

Diamoncl/Mo/Ni multi-layers on SKH-51 steel substrate was prepared to improve the abrasive wear resistance of a tool and die by a commercial chemical vapor deposition unit and electro-plating. The diamond after 7 hour deposition had cuba-octahedral structure with 2~5$\mu\textrm{m}$ grains. The existence of non-ferrous metals such as chromium, nickel and molybdenum between diamond and SKH-51 substrate results in forming higher quality of diamond layer by retarding carbon diffusion in the diamond layer during deposition, and also improving hardness and wear resistance. Surface cracks on the film was sometimes observed by the difference of by the thermal expansion coefficients between the steel substrate and the deposited layers during cooling.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.192-192
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals like graphene, hexagonal boron nitride (h-BN), molybdenum disulfate ($MoS_2$) and organic thin film have been studied intensely. In this talk, I will demonstrate the $MoS_2$ field effect transistor (FET) toward performance enhancement by insulating h-BN substrate.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.807-811
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• 2002

In this work, we investigated the deposition behavior of Mo/Si multilayer thin film structures simulated by a PVD process simulator based on Monte Carlo method to assist the optimized fabrication of the high quality mask in EUVL(Extreme Ultra-Violet Lithography) process. The shape of simulated thin film structures turned out to be largely dependent on the gas pressure(1∼30 mTorr), the target-substrate distance(1∼30 cm) and the diffusion length(1∼10 nm). From the simulation studies, it was predicted that relatively uniform thin film structures can be fabricated by decreasing gas pressure and increasing the target-substrate distance.

• Applied Science and Convergence Technology
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• v.26 no.1
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• pp.11-15
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• 2017

To improve the adhesion of Mo thin film as a back contact material, a DC magnetron sputtering system was used to deposit in the form of a bi-layer on soda-lime glass. Films with low resistivity and good adhesion were obtained from this deposition, even though the two qualities were found be hard to obtain at the same time. The best Mo bi-layer showed a resistivity of $8.13{\times}10^{-4}{\Omega}{\cdot}cm$ at $500^{\circ}C$ and $3.0{\times}10^{-3}\;Torr$. The XRD measurements showed that the crystallites of the films were mainly oriented in the (110) direction, the FE-SEM images revealed that the resistivity of the Mo films decreased with increasing substrate temperature, which temperature reduction is accompanied by an increase of the grain size. These experimental results were analyzed using the Fuchs-Sondheimer theory. Our Mo bi-layer film with better crystallinity and lower resistivity can be suitably used as a back-contact layer for CIGS solar cells.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.263-267
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• 2006

As technology advances, there is a demand for development of hard solid lubricant coating. (Ti, Cr, Zr)N-$MoS_2$ films were deposited on AISI H13 tool steel substrate by co-deposition of $MoS_2$ with (Ti, Cr, Zr)N using a D.C. magnetron sputtering process. The influence of the $N_2Ar$ gas ratio, the amount of $MoS_2$ in the films and the bias voltage on the mechanical and structural properties of the films were investigated. The highest hardness level was observed at the $N_2/Ar$ gas ratio of 0.3. Hardness of the films did not change much with the increase of the $MoS_2$ content in the films. As the substrate bias potential was increased, hardness level of the film reached maximum at -150 V. Surface morphology of these films indicated that high hardness was attributed to the fine dome structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.321-322
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• 2007

In order to increase the cost effectiveness of solar cells, module production should be treated more comprehensively. Back contact cells offer distinct advantage in the interconnection of cells to modules. Thereby Mo thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the Mo were vapor-deposited in the named order. Among them, Mo were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC power was controlled so that the composition of Mo, while the surface temperature having an effect on the quality of the thin film was changed from R.T$[^{\circ}C]$ to $200[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Micro-structural studies were carried out by XRD (D/MAX-1200, Rigaku Co.) and SEM (JSM-5400, Jeol Co.). Electrical properties were measured by CMT-SR3000 Measurement System.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.