• 한국표면공학회지
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• 제37권1호
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• pp.1-4
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• 2004

MoS$_2$-Ti films were deposited on SKD-11 tool steel substrate by a D.C. magnetron sputtering system. The influence of deposition parameters on the adhesion of the films was investigated by the scratch test. Crosssection morphology was evaluated using FE-SEM. The plasma etching played an important role on the adhesion of the films. The appropriate etching conditions roughened the surface, resulting In the improved adhesion of the film. The adhesion of the film increased with the interlayer thickness up to 110 nm and then decreased slightly with further increasing of interlayer thickness. The adhesion was highest at a bias voltage of -50 V. Further increase of the bias voltage decreased the film adhesion.

• Applied Science and Convergence Technology
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• 제26권1호
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• pp.11-15
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• 2017

To improve the adhesion of Mo thin film as a back contact material, a DC magnetron sputtering system was used to deposit in the form of a bi-layer on soda-lime glass. Films with low resistivity and good adhesion were obtained from this deposition, even though the two qualities were found be hard to obtain at the same time. The best Mo bi-layer showed a resistivity of $8.13{\times}10^{-4}{\Omega}{\cdot}cm$ at $500^{\circ}C$ and $3.0{\times}10^{-3}\;Torr$. The XRD measurements showed that the crystallites of the films were mainly oriented in the (110) direction, the FE-SEM images revealed that the resistivity of the Mo films decreased with increasing substrate temperature, which temperature reduction is accompanied by an increase of the grain size. These experimental results were analyzed using the Fuchs-Sondheimer theory. Our Mo bi-layer film with better crystallinity and lower resistivity can be suitably used as a back-contact layer for CIGS solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.142-142
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• 2005

• 한국전자파학회지:전자파기술
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• 제14권3호
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• pp.15-19
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• 2003

본 연구에서는 RF magnetron sputtering으로 상온에서 증착된 ZnO압전박막을 이용하여, 1.96 GHz 대역의 air gap type의 FBAR BPF를 개발하였다. FBAR BPF는 Si wafer에 절연막으로 열 산화막층(SiO$_2$)을 형성한 후, 형성된 산화막 위에 바닥전극(Al), ZnO압전층 그리고 상부전극(Mo)를 차례로 RF magnetron sputter장비를 사용하여 증착시키고, Si wafer를 dry etching하여 air hole을 구현함으로써 device를 제조하였다. 제조된 FBAR BPF의 ZnO압전층의 XRD분석 결과 (002)면 방향으로 우선 배향되었으며, XRC의 $\sigma$값은 1.018이었다. 삽입손실 1 dB 내외로 우수한 특성을 나타내었다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.786-788
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• 2013

몰리브덴(Molybdenum) 박막은 높은 전기전도성을 가진 금속으로 CIGS계 태양전지의 후면전극으로 많이 사용되고 있다. 스퍼터링법을 통해 증착되는 몰리브덴 박막의 경우, 전기 전도성 및 기판과의 밀착성은 스퍼터 전력 및 압력과 같은 공정 조건에 따라 변화된다. 본 연구에서는 DC 마그네트론 스퍼터링법을 이용하여 몰리브덴 박막을 Ar 가스 분위기에서 압력별로 증착하였다. SEM(scanning electron microscope), XRD(X-ray Diffraction), 4-point probe, 광반사율, Hall measurement를 이용하여 박막의 전기적, 구조적 특성을 분석하였다.

• Journal of Mechanical Science and Technology
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• 제16권9호
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• pp.1065-1071
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• 2002

The friction and wear behaviors of magnetron sputtered MoS$_2$ films were investigated through the use of a pin and disk type tester. The experiments were performed for two kinds of specimens (ground (Ra 0.5 $\mu\textrm{m}$) and polished (Ra 0.01 $\mu\textrm{m}$) substrates) under the following operating condifions : linear sliding velocities in the range of 22～66 mm/s (3 types), normal loads varying from 9.8～29.4 N(3 types) and atmospheric conditions of air, medium and high vacuum (3types). Silicon nitride pin was used as the lower specimen and magnetron sputtered MoS$_2$ on bearing steel disk was used as the upper specimen. The results showed that low friction property of the MoS$_2$ films could be identified in high vacuum and the specific wear rate in air was much higher than that in medium and high vacuum due to severe oxidation. It was found that the main wear mechanism in air was oxidation whereas in high vacuum accumulation of plastic flow and adhesion, were the main causes of wear.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.554-557
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• 2001

Indium Tin Oxide(ITO) thin films have been fabricated by the dc magnetron sputtering technique with a target of a mixture In$_2$O$_3$(90mo1%) and SnO$_2$(10mo1%). We prepared ITO thin films with substrate temperature 200 to 400$^{\circ}C$ and annealing temperature 200 to 500$^{\circ}C$ food polycrystalline-structured ITO films with a low electrical resistivity of 3.4${\times}$10$\^$-4/ Ω$.$cm have been obtained. The visible light transmittance of all obtained films was over 80 %.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
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• pp.183-183
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• 2001

• 한국진공학회:학술대회논문집
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• 한국진공학회 2005년도 제29회 학술발표회 초록집
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• pp.154-154
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• 2005