• 한국분말재료학회지
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• 제8권3호
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• pp.201-206
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• 2001

$>LaMnO_3$$(La, Sr)MO_3$, and $(La, Sr)MO_3/YSZ$ gel films were deposited by spin-coating technique on scandium-doped zirconia (YSZ) substrate using the precursor solution prepared from $La(O-i-C_3H_7)_3$, $Co(CH_3COO)_2$or $Mn(O-i-C_3H_7)_2$,2-methoxyethanol, and polyethylene glycol. By heat-treating the gel films, the electrochemical cells, $(La, Sr)MnO_3{\mid}ScSZ{\mid}Pt$ were fabricated. The effect of polyethylene glycol on the microstructure evolution of $$LaCoO_3and $LaMnO_3$thin films was investigated, and NOx decomposition characteristics of the electrochemical cells were investigated at $500^{\circ}C$ to $600^{\circ}C$. By applying a direct current to the $(La, Sr)MnO_3{\mid}ScSZ{\mid}Pt$ electrochemical cell, good NOx conversion rate could be obtained relatively at low current value even if excess oxygen is included in the reaction gas mixture.

• Corrosion Science and Technology
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• 제2권1호
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• pp.18-25
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• 2003

Effects of the precipitation of $\sigma$ phase on the metastable pitting as a precursor of stable pitting corrosion and also on the progress of stale pitting of the 25Cr-7Ni-3Mo-0.25N duplex stainless steel were investigated in chloride solution. Electrochemical potential and current noises of the alloy were measured in 10 % ferric chloride solution ($FeCl_3$) with zero resistance ammeter (ZRA), and then analyzed by power spectral density (PSD) and by corrosion admittance ($A_c$) spectrum. With aging at $850^{\circ}C$, the passive film of the alloy was found to get significantly unstable as represented by power spectral density (PSD) and a transition from metastable pitting state to stable one was observed. In the corrosion admittance spectrum, the number of negative $A_c$ corresponding to the state of localized corrosion increased with aging, suggesting that the precipitation of $\sigma$ phase considerably degraded the passive film by depleting Cr and Mo around it at $\alpha/\sigma$ or $\gamma/\sigma$ phase boundaries, thereby leading to the initiation of the pitting corrosion. However, the Cr and Mo at $\alpha/\sigma$ or $\gamma/\sigma$ phase boundaries which were once depleted due to the precipitation of the $\sigma$ phase were partly replenished by the diffusion of Cr and Mo from the surrounding matrix with aging time longer. The initiation of pitting seems to be associated with the precipitation density of the $\sigma$ phase with an effective size needed to induce the sufficient depletion of Cr and Mo around it.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.20-20
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• 2002

• Corrosion Science and Technology
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• 제16권4호
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• pp.167-174
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• 2017

Bicarbonate/carbonate and molybdate anions have been characterized for their inhibitive effect on pitting corrosion of carbon steel in simulated concrete pore solution by using electrochemical tests such as electrochemical impedance (EIS) and linear polarization (LP). It was revealed that bicarbonate/carbonate has a weak inhibitive effect on pitting corrosion that is approximately one order of magnitude lower compared to hydroxide. Molybdate is effective against pitting corrosion induced by the concentration of chloride as low as 113 mM and can increase the pitting potential of a previously pitted sample to the oxygen evolution potential by the concentration of molybdate as much as 14.6 mM only. The formation of a $CaMoO_4$ film on the surface hinders the reduction of dissolved oxygen on the steel surface, reducing corrosion potential and increasing the safety margin between corrosion potential and pitting potential further. In addition, pore-plugging by $FeMoO_4$ as a type of salt film within pits increases the likelihood of repassivation.

• Journal of Information Display
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• 제2권3호
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• pp.72-77
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• 2001

Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

• 한국표면공학회지
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• 제46권1호
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• pp.16-21
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• 2013

CIGS (Cu-In-Ga-Se) films were deposited on the Mo coated soda lime glass (Mo/SLG) by RF magnetron sputtering using a single sintered target with different chemical compositions. Heat treatment of the CIGS films were carried out under three different conditions, 1step ($350^{\circ}C$ for 2 hour and $550^{\circ}C$ for 2 hour) and 2step ($350^{\circ}C$ for 1 hour and $550^{\circ}C$ for 1 hour). In the case of CIGS films post-annealed on 2step method, grain size remarkably increased compared to other methods, indicating that chemical composition [Cu/(Ga+In) = 1] of CIGS films was same as CIGS target. After heat treatment by 2step method, band gap energy of the CIGS film deposited at RF 80 W showed 1.4 eV which is broadly similar to identical band gap energy (1.2 eV) of CIGS film prepared by evaporation method. Therefore, 2step heat treatment method could be expected to low temperature process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
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• pp.82-82
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• 2006