• 한국광학회지
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• 제19권6호
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• pp.429-434
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• 2008

비대칭 이중-금속 장거리 표면-플라즈몬 구조는 두 금속 사이에 위치한 코어 유전체 층의 굴절률을 임의로 선택하여도 장거리 표면-플라즈몬 모드가 존재한다는 장점이 있다. 도파로의 코어 층에 격자를 형성함으로써 플라즈몬 밴드-갭에 기초한 통신대역 파장에서의 장거리 표면-플라즈몬 파장필터를 구현하였다. Method of Line과 전달행렬방법 등을 통해 장거리 표면-플라즈몬 모드의 유효굴절률, 모드 특성, 투과도 등의 분석을 통해 설계하였으며, 도파로의 코어 층에 홀로그램 리소 방식을 이용하여 523.3 nm 주기의 브래그격자를 형성하여 파장필터를 제작하여 통신대역인 1541 nm 파장에서 대략 2 nm의 반치폭과 50 dB 이상의 파장 소광률을 확인하였다. 본 연구에서 제안한 파장필터는 표면-플라즈몬 집적회로를 구성하는 소자로써 중요한 역할을 할 것이다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.146.2-146.2
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• 2010

PEMFC를 구성하는 여러 부품 중 핵심부품은 MEA(Membrane Electrode Assembly)으로서 실제 연료전지 반응이 일어나며 연료전지의 성능을 결정하는 부품이다. 그러나 PEMFC의 특성 상 촉매로 귀금속인 Pt가 사용됨에 따라 경제성이 확보된 MEA의 성능을 얻기 위해선 현재 Pt 담지량을 0.3mg/$cm^2$ 이하로 크게 감소시키면서 Pt촉매의 고분산화와 미반응 사이트의 감소가 필요하다. 본 연구에서는 Pt 촉매의 미반응 사이트를 줄이고자 전기영동법에 의해 카본전극(carbon black + GDL) 상에 Pt 나노입자를 직접 석출시켜 Pt/C 촉매 전극을 제조 하였다. 본 실험에서는 가장 좋은 Pt 나노입자의 석출거동을 나타낸 30mA/$cm^2$, pH 2, duty cycle 25% 조건을 기준으로 하여 electro-deposition time을 통한 석출량 제어와 carbon paper의 wet proofing 정도에 따른 Pt의 석출거동을 조사하였으며, 종래의 방법으로 제조한 Pt/C 촉매전극의 전기화학적 특성과 비교 분석하였다. 전기영동 석출법에 사용된 Pt나노입자는 $H_2PtCl_6{\cdot}6H_2O$로부터 화학적 환원법으로 합성한 2~3nm 입경을 갖는 Pt콜로이드를 사용하였으며, magnetic stirring과 항온 ($20^{\circ}C$)을 유지하여 실험하였다. 전기영동 석출량 제어는 electro-deposition time을 5~25분까지 5분 간격으로 나누어 실험하였고 카본전극을 구성하는 carbon paper의 wet proofing 정도가 Pt 나노입자 석출거동에 미치는 영향을 조사하기 위하여 20, 40, 60%의 서로 다른 wet proofing 값을 갖는 carbon paper를 사용하여 Pt/C 촉매 전극을 제조하였다. 전기영동법으로 석출된 카본블랙 전극 상 Pt나노입자의 분산도와 담지량는 각각 FE-SEM과 TGA 장비를 사용하여 측정하였고, 제조된 Pt/C 촉매 전극의 전기화학적 촉매 특성은 cyclic voltammetry(CV)법으로 측정하였다.

• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.277-277
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• 2010

The capacity of the carbonaceous materials reached ca. $350\;mAhg^{-1}$ which is close to theorestical value of the carbon intercalation composition $LiC_6$, resulting in a relatively low volumetric Li capacity. Notwithstanding the capacities of carbon, it will not adjust well to the need so future devices. Silicon shows the highest gravimetric capacities (up to $4000\;mAhg^{-1}$ for $Li_{21}Si_5$). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. We focused on electrode materials in the multiphase form which were composed of two metal compounds to reduce the volume change in material design. A combination of electrochemically amorphous active material in an inert matrix (Si-M) has been investigated for use as negative electrode materials in lithium ion batteries. The matrix composited of Si-M alloys system that; active material (Si)-inactive material (M) with Li; M is a transition metal that does not alloy with Li with Li such as Ti, V or Mo. We fabricated and tested a broad range of Si-M compositions. The electrodes were sputter-deposited on rough Cu foil. Electrochemical, structural, and compositional characterization was performed using various techniques. The structure of Si-M alloys was investigated using X-ray Diffractometer (XRD) and transmission electron microscopy (TEM). Surface morphologies of the electrodes are observed using a field emission scanning electron microscopy (FESEM). The electrochemical properties of the electrodes are studied using the cycling test and electrochemical impedance spectroscopy (EIS). It is found that the capacity is strongly dependent on Si content and cycle retention is also changed according to M contents. It may be beneficial to find materials with high capacity, low irreversible capacity and that do not pulverize, and that combine Si-M to improve capacity retention.

• Journal of the Optical Society of Korea
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• 제16권4호
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• pp.349-353
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• 2012

Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

• 한국해양공학회지
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• 제28권4호
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• pp.356-362
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• 2014

Wear and corrosion of the engine parts surrounded with combustion chamber is more serious compared to the other parts of the engine because temperature of the exhaust gas in a combustion chamber is getting higher and higher with increasing of using the heavy oil of low quality. Therefore, an optimum repair weldment as well as an available choice of the base metal for these parts are very important to prolong their lifetime in a economical point of view. It reported that there was an experimental result for repair weldment on the forged steel which would be generally used with piston crown material, however, it is considered that there is no study for the repair weldment on the cast steel of piston crown material. In this study, four types of electrodes such as 1.25Cr-0.5Mo, 0.5Mo Inconel 625 and 718 were welded with SMAW and GTAW methods on the cast steel which would be generally used with piston crown material. And the corrosion properties of weld metal, heat affected zone and base metal were investigated using electrochemical methods such as measurement of corrosion potential, anodic polarization curves, cyclic voltammogram and impedance etc. in 35% $H_2SO_4$ solution. In the cases of Inconel 625, 718, the weld metals and base metals exhibited the best and worst corrosion resistance respectively, however, 1.25Cr-0.5Mo and 0.5Mo indicated that corrosion resistance of the base metal was better than the weld metal. And the weld metal welded with electrodes of Inconel 625 revealed the best corrosion resistance among the electrodes, and Inconel 718 followed the Inconel 625. Hardness relatively also indicated higher value in the weld metal compared to heat affected zone and base metal. In particular, Inconel 718 indicated the highest value of hardness compared to other electrodes in the heat affected zone.

• 한국수소및신에너지학회논문집
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• 제21권1호
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• pp.26-34
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• 2010

The electrocatalystic prperties of Pt-Co and Pt-Ni with heteropolyacids (HPAs) entrapped in covalently cross-linked sulfonated poly(ether ether ketone) (CL-SPEEK)/HPA membranes were investigated for water electrolysis. The HP As, including molybdophosphoric acid (MoPA), and tungstophosphoric acid (TPA) were both used as membrane additives and electrocatalysts. The membrane electrode assembly (MEA) was prepared by a nonequilibrium impregnation-reduction (I-R) method. $Pt(NH_3)_4Cl_2$, $NiCl_2$ and $CoCl_2$ as electrocatalytic materials and $NaBH_4$ as reducing agent were used. I order to enhance electrocatalytic activity, the catalyst layer prepared above was electrodeposited (Dep) with HP A. Surface morphologies and physico-chemical properties of MEA were investigated by means of SEM, EDX and XRD. The electrocatalytic properties of composite membranes such as the cell voltage and coulombic charge in CV were in the order of magnitude: CL-SPEEK/MoPA40 (wt%) > CL-SPEEK/TPA30 > Nafion117. In the optimum cell applications for water electrolysis, the cell voltage of Pt/CL-SPEEK-MoPA40/Pt-Co (Dep-MoPA) and Pt/CL-SPEEK-TPA30/Pt-Co (Dep-TPA) was 1.75 Vat $80^{\circ}C$ and $1\;A/cm^2$ and voltage efficiency was 87.1%. Also, the observed activity of Pt-Co (84:16 atomic ratio by EDX) is a little higher than that of Pt-Ni (86: 14). The current density peak of electrodeposited electrodes were better a little than those of unactivated electrodes based on the same membranes.

• 한국재료학회지
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• 제20권12호
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• pp.661-668
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• 2010

Cu(In,Ga)$Se_2$(CIGS) photovoltaic thin films were electrodeposited on Mo/glass substrates with an aqueous solution containing 2 mM $CuCl_2$, 8 mM $InCl_3$, 20 mM $GaCl_3$ and 8mM $H_2SeO_3$ at the electrodeposition potential of -0.6 to -1.0 V(SCE) and pH of 1.8. The best chemical composition of $Cu_{1.05}In_{0.8}Ga_{0.13}Se_2$ was found to be achieved at -0.7 V(SCE). The precursor Cu-In-Ga-Se films were annealed for crystallization to chalcopyrite structure at temperatures of 100-$500^{\circ}C$ under Ar gas atmosphere. The chemical compositions, microstructures, surface morphologies, and crystallographic structures of the annealed films were analyzed by EPMA, FE-SEM, AFM, and XRD, respectively. The precursor Cu-In-Ga-Se grains were grown sparsely on the Mo-back contact and also had very rough surfaces. However, after annealing treatment beginning at $200^{\circ}C$, the empty spaces between grains were removed and the grains showed well developed columnar shapes with smooth surfaces. The precursor Cu-In-Ga-Se films were also annealed at the temperature of $500^{\circ}C$ for 60 min under Se gas atmosphere to suppress the Se volatilization. The Se amount on the CIGS film after selenization annealing increased above the Se amount of the electrodeposited state and the $MoSe_2$ phase occurred, resulting from the diffusion of Se through the CIGS film and interaction with Mo back electrode. However, the selenization-annealed films showed higher crystallinity values than did the films annealed under Ar atmosphere with a chemical composition closer to that of the electrodeposited state.

• 한국진공학회지
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• 제9권2호
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• pp.122-129
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• 2000

Mo이 코팅된 유리기판 상에 전기영동법으로 도포된 유리화 비정형 탄소분말의 전계방출 특성을 조사하였다. 탄소의 $sp^2$결합만으로 이루어진 유리화 비정형 탄소는 전계방출을 얻기 위한 초기화 공정 없이도 규칙적인 전계방출 거동을 보이고 있었다. 전자의 방출이 시작되는 임계전장의 크기는 3에서 4 MV/m 구간의 값을 가지고 있었으며, Fowler-Nordheim plot로부터 평가된 effective work function은 약 0.06 eV였다. 전류전압거동의 반복측정에 의해 관찰된 바와 같이 전계방출의 안정성 면에서 유리화 비정형 탄소는 Si tip보다 우수하였으며, 도포된 전체면적에서 전면발광의 가능성을 확인할 수 있었다. 이러한 결과는 탄소계 물질에서 관찰되는 전계방출이 탄소의 $sp^3$결합과 밀접하게 관련되어 있지 않으며, 전자가음극물질의 표면으로 이동하는데 필요한 전기전도성, 혹은 기판과 음극물질 계면에서의 전자이동 등이 전계방출의 거동을 결정하는 중요한 요인임을 보여주고 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.163-163
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• 1999

MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.