• 전기화학회지
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• 제2권3호
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• pp.150-155
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• 1999

[ $H_2-O_2$ ] 알칼리형 연료전지용 수소극으로서 아크융해법으로 제조된 Brewer-Engel type의 Co-Mo$(35\;wt\%)$ 및 Ni-Mo$(35\;wt\%)$ 금속간화합물 전극의 전기화학적 안정성이 조사되었다. $N_2$가스로 용존산소를 제거한 $80^{\circ}C$ 6N KOH 전해질 내에서 금속간화합물 전극의 전기화학적 안정성에 미치는 전해질의 농도 및 온도의 영향이 조사되었다. 또한, AFC의 정상 작동조건하에서는 Co-Mo및 Ni-Mo전극의 전기화학적 안정성에 대한 분극전압(과전압)의 영향이 논의되었다. Co-Mo전극은 Ni-Mo전극에 비하여 낮은 전기화학적 안정성을 보였다. 수소가스 평형전위로부터 낮은 양분극 과전압 하에서 Co-Mo전극에서는 Co와 Mo의 용해가 동시에 일어났다. 그러나, Co는 Mo에 비하여 급격히 용해되었다 높은 양분극 과전압에서는 전극표면에 $Co(OH)_2$ 부동태 피막이 형성되었다. Ni-Mo전극의 경우에는 Mo의 용해반응이 치밀한 $Ni(OH)_2$, 부동태 피막형성에 의하여 억제되어 우수한 전기화학적 안정성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.441-443
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• 2005

According as CCFL(Cold Cathode Fluorescent lamp) of light source in Backlight unit for Note PC (Personal computer) is presently needed to low power consumption and long life time, the development focus of CCFL is going on the discharge gas, phosphor and electrode material. First of all, discharge voltage characteristic of CCFL is closely connected with electrode material For low discharge voltage, the characteristic of electrode material is needed to low work function, low sputtering ratio and superior manufacturing property. We developed new CCFL with Nb/Ni Clad electrode superior to conventional CCFL. Because Nb/Ni Clad electrode with Ni material and Nb material, the electrical characteristic is superior to other electrode materials. The electrode of Nb/Ni Clad is composed that Ni of outside material has superior manufacturing property and Nb of inside material has low work function. Nb/Ni Clad of new electrode material is made by process of Rolling mill at high pressure and heat treatment. We compared electrical characteristic of Nb/Ni clad electrode with conventional Mo electrode by measurement. Mo electrode and Nb/Ni Clad electrode of cup type with diameter 1.1 mm and length 3.0mm are used to this experiment. Material content of Mo electrode is Mo 100%. But, Nb/Ni Clad electrode is composed by content of Nb 40% and Ni 60%. The result of comparison measurement between new CCFL with Nb/Ni Clad electrode and conventional CCFL was appeared that CCFL with Nb/Ni Clad electrode had superior characteristic than conventional CCFL. As a result of experiment, we completed Note PC with low power consumption and long life time by application of new CCFL with Nb/Ni Clad electrode.

• 대한화학회지
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• 제14권2호
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• pp.141-145
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• 1970

The reduction of Mo-thiocyanate (V) complex on dropping mercury electrode has been studied at ionic strength 0.6 with pH less than 2.3. D-C polarogram obtained from acidic solutions are reversible, diffusion controlled current. The electrode reaction of Mo-thiocyanate(V) may be represented as follows. $MoO(SCN)_3\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;H_2O\;+\;SCN^-$From this reaction, the half wave potential assumed to be $E_{1/2}\;=\;E_0'\;-\;0.059\;pH\;-\;0.03\;log{\;frac{[Mo(SCN)_2{^+}][SCN^-]}{[MoO(SCN)_3]}}$Considering the dissociation of this complex, however, it was estimated that the electrode reaction may be written by. $MoO^{+3}\;+\;3SCN^-\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;SCN^-\;+\;H_2O$.

• 한국재료학회지
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• 제23권9호
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• pp.495-500
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• 2013

Mo-based thin films are frequently used as back electrode materials because of their low resistivity and high crystallinity in CIGS chalcopyrite solar cells. Mo:Na/Mo bilayer thin films with $1{\mu}m$ thickness were deposited on soda lime glass by varying the thickness of each layer using dc-magnetron sputtering. The effects of the Mo:Na layer on morphology and electrical property in terms of resistivity were systematically investigated. The resistivity increased from $159{\mu}{\Omega}cm$ to $944{\mu}{\Omega}cm$; this seemed to be caused by increased surface defects and low crystallinity as the thickness of Mo:Na layer increased from 100 nm to 500 nm. The surface morphologies of the Mo thin films changed from a somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries as the thickness of Mo:Na layer increased. Na contents varied drastically from 0.03 % to 0.52 % according to the variation of Mo:Na layer thickness. The change in Na content may be ascribed to changes in surface morphology and crystallinity of the thin films.

• Bulletin of the Korean Chemical Society
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• 제31권1호
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• pp.104-111
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• 2010

The heterogeneous electron transfer at $SiMo_{12}O_{40}^{4-}$ monolayers on GC, HOPG, and Au electrode surfaces are investigated using cyclic voltammetric and electrochemical impedance spectroscopic (EIS) methods. The electron transfer of negatively charged $Fe(CN)_6^{3-}$ species is retarded at $SiMo_{12}O_{40}^{4-}$-modified electrode surfaces, while that of positively charged $Ru(NH_3)_6^{3+}$species is accelerated at the modified surfaces. This is due to the electrostatic interactions between $SiMo_{12}O_{40}^{4-}$ layers on surfaces and charged redox species. The electron transfer kinetics of a neutral redox species, 1,1‘-ferrocenedimethanol (FDM), is not affected by the modification of electrode surfaces with $SiMo_{12}O_{40}^{4-}$, indicating the $SiMo_{12}O_{40}^{4-}$ monolayers do not impart barriers to electron transfer of neutral redox species. This is different from the case of thiolate SAMs which always add barriers to electron transfer. The effect of $SiMo_{12}O_{40}^{4-}$ layers on the electron transfer of charged redox species is dependent on the kind of electrodes, where HOPG surfaces exhibit marked effects. Possible mechanisms responsible for different electron transfer behaviors at $SiMo_{12}O_{40}^{4-}$ layers are proposed.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.475-481
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• 2013

By using ionic liquid 1-hexylpyridinium hexafluorophosphate ($HPPF_6$) based carbon ionic liquid electrode (CILE) as the substrate electrode, a $CoMoO_4$ nanorods and myoglobin (Mb) composite was casted on the surface of CILE with chitosan (CTS) as the film forming material to obtain the modified electrode (CTS/$CoMoO_4$-Mb/CILE). Spectroscopic results indicated that Mb retained its native structures without any conformational changes after mixed with $CoMoO_4$ nanorods and CTS. Electrochemical behaviors of Mb on the electrode were carefully investigated by cyclic voltammetry with a pair of well-defined redox peaks from the heme Fe(III)/Fe(II) redox center of Mb appeared, which indicated that direct electron transfer between Mb and CILE was realized. Electrochemical parameters such as the electron transfer number (n), charge transfer coefficient (${\alpha}$) and electron transfer rate constant ($k_s$) were estimated by cyclic voltammetry with the results as 1.09, 0.53 and 1.16 $s^{-1}$, respectively. The Mb modified electrode showed good electrocatalytic ability toward the reduction of trichloroacetic acid in the concentration range from 0.1 to 32.0 mmol $L^{-1}$ with the detection limit as 0.036 mmol $L^{-1}$ ($3{\sigma}$), and the reduction of $H_2O_2$ in the concentration range from 0.12 to 397.0 ${\mu}mol\;L^{-1}$ with the detection limit as 0.0426 ${\mu}mol\;L^{-1}$ ($3{\sigma}$).

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3675-3678
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• 2010

In-situ X-ray absorption spectroscopy (XAS) was used to elucidate the structural variation of $\alpha-MoO_3$ electrode upon discharge/charge reaction in a lithium ion battery. According to the XAS analysis, hexavalent Mo atoms in $\alpha-MoO_3$ framework are reduced as the amount of intercalated lithium ions increases. As lithium de-intercalation proceeds, most of pre-edge peaks are restored again. However, according to the Fourier transforms of the extended X-ray absorption fine structure (EXAFS) spectra, lithium de-intercalation reaction is partially irreversible upon the charge reaction, which is one of the main reasons why the capacity of $\alpha-MoO_3$ electrode decreases upon successive discharge/charge cycles.

• 한국재료학회지
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• 제20권8호
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• pp.412-417
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• 2010

Mo thin films were used for the back electrode because of the low resistivity in the Mo/$CuInGaSe_2$ contact in chalcopyrite solar cells. $1\;{\mu}m$ thick Mo thin films were deposited on soda lime glass by varying the Ar pressure with the dc-magnetron sputtering process. The effects of the Ar pressure on the morphology of the Mo back electrode were studied and the relationships between the morphology and electro-optical properties, namely, the resistivity as well as the reflectance of the Mo thin films, were investigated. The resitivity increased from $24\;{\mu}{\Omega}{\cdot}cm$ to $11833\;{\mu}{\Omega}{\cdot}cm$; this was caused by the increased surface defect and low crystallinity as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The surface morphologies of the Mo thin films changed from somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries, as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The changes of reflectances in the visible light range with Ar pressures were mainly attributed to the surface morphological changes of the Mo thin films. The reflectance in the visible light range showed the highest value of 45% at $3{\times}10^{-3}\;Torr$ and decreased to 18.5% at $3{\times}10^{-2}\;Torr$.

• 전기전자학회논문지
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• 제21권2호
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• pp.170-173
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• 2017

본 연구에서는 Al, Mo 및 Pt 금속 물질을 a-IGZO 박막트랜지스터의 게이트 전극으로 플라스틱 기판 위에 형성하여 제작하고, 게이트 물질에 따른 전기적 특성을 측정하였다. Al 게이트 전극에 비해 Pt 게이트 전극을 사용한 박막트랜지스터의 문턱전압은 -4.1V에서 -0.3 V까지 감소하였고, 전하이동도는 $15.8cm^2/V{\cdot}s$에서 $22.1cm^2/V{\cdot}s$ 로 향상되었다. 게이트 전극에 따른 박막트랜지스터의 문턱전압 이동은 전극의 일함수와 채널층의 페르미 에너지 차이로 인한 영향이라는 것을 확인 할 수 있었다. 또한, 채널 물질의 페르미 에너지를 고려하였을 경우에 Pt 게이트 전극이 박막트랜지스터의 전기적 특성 면에서 적합한 물질로 확인되었다. 추가적으로 Mo 게이트 전극을 사용한 박막트랜지스터에 대한 특성도 본 논문에서 다룬다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.343-343
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• 2014

We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.