• Journal of the Korean Electrochemical Society
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• v.2 no.3
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• pp.150-155
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• 1999

The Electrochemical stabilities of the Brewer-Engel type intermetallic compounds of Co-Mo $(35 wt\%)$ and Ni-Mo$(35 wt\%)$ manufactured by the arc-melting method for the hydrogen electrode of $H_2-O_2$ alkaline fuel cell were investigated. Effects of temperature and concentration on the electrochemical behavior of the electrodes in the $80^{\circ}C$ 6 N KOH solution deaerated with $N_2$ gas were studied by electrochemical methods. The effect of overpotential on the electrochemical stabilities of Co-Mo and Ni-Mo intermetallic compounds was also discussed under the normal operation condition of AFC. It was shown that Co-Mo electrode had lower electrochemical stability as compared to Ni-Mo. In the case of Co-Mo electrode, a simultaneous dissolution of cobalt and molybdenum has occurred at low anodic overpotential form equilibrium hydrogen electrode potential, but the dissolution of cobalt was serious, and Co(OH)l layer on the electrode surface formed at the high anodic overpotential. In contrast the Ni-Mo electrode had high electrochemical stability because formation of the dense and thin protective $Ni(OH)_2$ layer prevented the dissolution of molybdenum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.441-443
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• 2005

According as CCFL(Cold Cathode Fluorescent lamp) of light source in Backlight unit for Note PC (Personal computer) is presently needed to low power consumption and long life time, the development focus of CCFL is going on the discharge gas, phosphor and electrode material. First of all, discharge voltage characteristic of CCFL is closely connected with electrode material For low discharge voltage, the characteristic of electrode material is needed to low work function, low sputtering ratio and superior manufacturing property. We developed new CCFL with Nb/Ni Clad electrode superior to conventional CCFL. Because Nb/Ni Clad electrode with Ni material and Nb material, the electrical characteristic is superior to other electrode materials. The electrode of Nb/Ni Clad is composed that Ni of outside material has superior manufacturing property and Nb of inside material has low work function. Nb/Ni Clad of new electrode material is made by process of Rolling mill at high pressure and heat treatment. We compared electrical characteristic of Nb/Ni clad electrode with conventional Mo electrode by measurement. Mo electrode and Nb/Ni Clad electrode of cup type with diameter 1.1 mm and length 3.0mm are used to this experiment. Material content of Mo electrode is Mo 100%. But, Nb/Ni Clad electrode is composed by content of Nb 40% and Ni 60%. The result of comparison measurement between new CCFL with Nb/Ni Clad electrode and conventional CCFL was appeared that CCFL with Nb/Ni Clad electrode had superior characteristic than conventional CCFL. As a result of experiment, we completed Note PC with low power consumption and long life time by application of new CCFL with Nb/Ni Clad electrode.

• Journal of the Korean Chemical Society
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• v.14 no.2
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• pp.141-145
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• 1970

The reduction of Mo-thiocyanate (V) complex on dropping mercury electrode has been studied at ionic strength 0.6 with pH less than 2.3. D-C polarogram obtained from acidic solutions are reversible, diffusion controlled current. The electrode reaction of Mo-thiocyanate(V) may be represented as follows. $MoO(SCN)_3\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;H_2O\;+\;SCN^-$From this reaction, the half wave potential assumed to be $E_{1/2}\;=\;E_0'\;-\;0.059\;pH\;-\;0.03\;log{\;frac{[Mo(SCN)_2{^+}][SCN^-]}{[MoO(SCN)_3]}}$Considering the dissociation of this complex, however, it was estimated that the electrode reaction may be written by. $MoO^{+3}\;+\;3SCN^-\;+\;2H^+\;+\;2e\;{\to}\;Mo(SCN)_2{^+}\;+\;SCN^-\;+\;H_2O$.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.495-500
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• 2013

Mo-based thin films are frequently used as back electrode materials because of their low resistivity and high crystallinity in CIGS chalcopyrite solar cells. Mo:Na/Mo bilayer thin films with $1{\mu}m$ thickness were deposited on soda lime glass by varying the thickness of each layer using dc-magnetron sputtering. The effects of the Mo:Na layer on morphology and electrical property in terms of resistivity were systematically investigated. The resistivity increased from $159{\mu}{\Omega}cm$ to $944{\mu}{\Omega}cm$; this seemed to be caused by increased surface defects and low crystallinity as the thickness of Mo:Na layer increased from 100 nm to 500 nm. The surface morphologies of the Mo thin films changed from a somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries as the thickness of Mo:Na layer increased. Na contents varied drastically from 0.03 % to 0.52 % according to the variation of Mo:Na layer thickness. The change in Na content may be ascribed to changes in surface morphology and crystallinity of the thin films.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.104-111
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• 2010

The heterogeneous electron transfer at $SiMo_{12}O_{40}^{4-}$ monolayers on GC, HOPG, and Au electrode surfaces are investigated using cyclic voltammetric and electrochemical impedance spectroscopic (EIS) methods. The electron transfer of negatively charged $Fe(CN)_6^{3-}$ species is retarded at $SiMo_{12}O_{40}^{4-}$-modified electrode surfaces, while that of positively charged $Ru(NH_3)_6^{3+}$species is accelerated at the modified surfaces. This is due to the electrostatic interactions between $SiMo_{12}O_{40}^{4-}$ layers on surfaces and charged redox species. The electron transfer kinetics of a neutral redox species, 1,1‘-ferrocenedimethanol (FDM), is not affected by the modification of electrode surfaces with $SiMo_{12}O_{40}^{4-}$, indicating the $SiMo_{12}O_{40}^{4-}$ monolayers do not impart barriers to electron transfer of neutral redox species. This is different from the case of thiolate SAMs which always add barriers to electron transfer. The effect of $SiMo_{12}O_{40}^{4-}$ layers on the electron transfer of charged redox species is dependent on the kind of electrodes, where HOPG surfaces exhibit marked effects. Possible mechanisms responsible for different electron transfer behaviors at $SiMo_{12}O_{40}^{4-}$ layers are proposed.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.475-481
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• 2013

By using ionic liquid 1-hexylpyridinium hexafluorophosphate ($HPPF_6$) based carbon ionic liquid electrode (CILE) as the substrate electrode, a $CoMoO_4$ nanorods and myoglobin (Mb) composite was casted on the surface of CILE with chitosan (CTS) as the film forming material to obtain the modified electrode (CTS/$CoMoO_4$-Mb/CILE). Spectroscopic results indicated that Mb retained its native structures without any conformational changes after mixed with $CoMoO_4$ nanorods and CTS. Electrochemical behaviors of Mb on the electrode were carefully investigated by cyclic voltammetry with a pair of well-defined redox peaks from the heme Fe(III)/Fe(II) redox center of Mb appeared, which indicated that direct electron transfer between Mb and CILE was realized. Electrochemical parameters such as the electron transfer number (n), charge transfer coefficient (${\alpha}$) and electron transfer rate constant ($k_s$) were estimated by cyclic voltammetry with the results as 1.09, 0.53 and 1.16 $s^{-1}$, respectively. The Mb modified electrode showed good electrocatalytic ability toward the reduction of trichloroacetic acid in the concentration range from 0.1 to 32.0 mmol $L^{-1}$ with the detection limit as 0.036 mmol $L^{-1}$ ($3{\sigma}$), and the reduction of $H_2O_2$ in the concentration range from 0.12 to 397.0 ${\mu}mol\;L^{-1}$ with the detection limit as 0.0426 ${\mu}mol\;L^{-1}$ ($3{\sigma}$).

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3675-3678
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• 2010

In-situ X-ray absorption spectroscopy (XAS) was used to elucidate the structural variation of $\alpha-MoO_3$ electrode upon discharge/charge reaction in a lithium ion battery. According to the XAS analysis, hexavalent Mo atoms in $\alpha-MoO_3$ framework are reduced as the amount of intercalated lithium ions increases. As lithium de-intercalation proceeds, most of pre-edge peaks are restored again. However, according to the Fourier transforms of the extended X-ray absorption fine structure (EXAFS) spectra, lithium de-intercalation reaction is partially irreversible upon the charge reaction, which is one of the main reasons why the capacity of $\alpha-MoO_3$ electrode decreases upon successive discharge/charge cycles.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.412-417
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• 2010

Mo thin films were used for the back electrode because of the low resistivity in the Mo/$CuInGaSe_2$ contact in chalcopyrite solar cells. $1\;{\mu}m$ thick Mo thin films were deposited on soda lime glass by varying the Ar pressure with the dc-magnetron sputtering process. The effects of the Ar pressure on the morphology of the Mo back electrode were studied and the relationships between the morphology and electro-optical properties, namely, the resistivity as well as the reflectance of the Mo thin films, were investigated. The resitivity increased from $24\;{\mu}{\Omega}{\cdot}cm$ to $11833\;{\mu}{\Omega}{\cdot}cm$; this was caused by the increased surface defect and low crystallinity as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The surface morphologies of the Mo thin films changed from somewhat coarse fibrous structures to irregular and fine celled structures with increased surface cracks along the cell boundaries, as the Ar pressure increased from $3{\times}10^{-3}$ to $3{\times}10^{-2}\;Torr$. The changes of reflectances in the visible light range with Ar pressures were mainly attributed to the surface morphological changes of the Mo thin films. The reflectance in the visible light range showed the highest value of 45% at $3{\times}10^{-3}\;Torr$ and decreased to 18.5% at $3{\times}10^{-2}\;Torr$.

• Journal of IKEEE
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• v.21 no.2
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• pp.170-173
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• 2017

In this study, we fabricate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with three different gate electrode materials of Al, Mo and Pt on plastic substrates and investigate their electrical characteristics. Compared to an a-IGZO TFT with Al gate electrode, the threshold voltage of an a-IGZO TFT with a Pt electrode decreases from -4.2 to -0.3 V. and the filed-effect mobility is improved from 15.8 to $22.1cm^2/V{\cdot}s$. The threshold voltage shift of the TFT is affected by the difference between the work function of the gate electrode and the Fermi energy of the channel layer. Moreover, the Pt gate electrode is considered to be the suitable material in terms of the electrical characteristics of the TFT. In addition, an description on an a-IGZO TFT with a Mo electrode will be given here.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.343-343
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• 2014

We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.