• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.650-653
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• 2004

We have synthesized some phosphors in the system MO-$Al_2O_3-SiO_2$(M=Sr, Ba) by combinatorial polymerized-complex method. Composition and synthetic temperature of phosphors in the liblary was screened from the emission intensities of individual samples under 365nm excitation. As we were screened the higher luminescent candidate composition (or candidate host lattice) at 365nm excitation, investigated whether good radiation was possible at the 405 or 465nm excitation by give the host lattice to be discovered more various change. From libraries about 2 systems, the compound to be expected in long wavelength among the compound to be screened are $Sr_4Al_{14}O_{25}$, $Sr_3Al_2O_6$, $SrAl_2Si_2O_8$, and $BaAl_2Si_2O_8$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.5-12
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• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.205-207
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• 2009

아크이온플래이팅 기술과 스퍼터링 기술이 결합된 하이브리드 코팅 시스템을 이용하여 STS 304와 Si 기판에 4성분계 Cr-Al-Mo-N 코팅을 증착하였다. $N_2$/Ar 혼합가스 분위기하에 아크 타겟은 Cr을 사용하였고 스퍼터링 타겟은 Al과 Mo를 사용하였으며 합성된 Cr-Al-Mo-N 코팅은 주로 치환고용된 (Cr, Al, Mo)N으로 구성되었다. 최고 경도값은 Mo 함량이 24.2 at.%일 때 35 GPa을 나타냈으며 마찰계수는 Mo의 함량이 0에서 33.2 at.%로 증가함에 따라 0.9에서 0.48로 감소하였다. 이는 $MoO_3$가 코팅면과 스틸볼 계면에서 고체 윤활제로 작용한 것으로 사료된다. 그러나 Cr-Al-Mo-N 코팅은 MoN의 낮은 내산화온도로 인하여 Cr-Al-N에 비하여 더 낮은 온도에서 산화되었다.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.130-135
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• 2003

Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.

• Journal of Korea Foundry Society
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• v.27 no.5
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• pp.221-223
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• 2007

공구강은 C, Cr, V, Mo, W, Co 및 Si 과 같은 첨가원소를 함유한 복잡한 철계 합금으로 주요 특성인 경도, 부식저항성, 열 연화저항성 그리고 인성의 요구수준에 따라 화학성분이 결정된다. 본 연구에서는 1.0C, 0.2Mn, 3.8Cr, 1.5W, 8.5Co, 9.2Mo, 1.0V 조성의 M42 공구강의 미세조직과 열간가공성에 미치는 Si 함량의 효과를 체계적으로 조사하였다. 진공유도용해를 이용하여 Si 함량을 중량비로 0.33 에서 1.7% 까지 변화시켜 $140{\times}140{\times}330\;mm^{3}$ 크기의 잉곳으로 제조하였다. 이렇게 제조한 잉곳들은 $1150^{\circ}C$에서 1.5시간 동안 용체화처리한 후 노냉하였고, 이어 $1180^{\circ}C$에서 15mm 두께의 판재로 열간압연하였다. 공정 탄화물의 형상 및 분해 거동을 중심으로 미세조직을 관찰한 결과 Si 함량이 증가함에 따라 분해속도가 느려지는 것을 알 수 있었고 이로 인해 열간성형성이 급격히 저하되는 것으로 나타났다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.209.2-209.2
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• 2015

Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.3-6
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• 2003

This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• The Journal of the Korea institute of electronic communication sciences
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• v.3 no.2
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• pp.79-85
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• 2008

It is important to consider the life of battery and low power operation for various wireless communications. Thus, Analog current-mode signal processing with SI circuit has been taken notice of in designing the LSI for wireless communications. However, in current mode signal processsing, current memory circuit has a problem called clock-feedthrough. In this paper, we examine the connection of CMOS switch that is the common solution of clock-feedthrough and calculate the relation of width between CMOS switch for design methodology for improvement of current memory. As a result of simulation, when the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the width relation in CMOS switch is obtained with $W_{Mp}=5.62W_{Mn}+1.6$, for the nMOS width of 2~6um in CMOS switch. And from the same simulation condition, it is obtained with $W_{Mp}=2.05W_{Mn}+23$ for the nMOS width of 6~10um in CMOS switch. Then the defined width relation of MOS transistor will be useful guidance in design for improvement of current memory.

• Applied Chemistry for Engineering
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• v.3 no.4
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• pp.649-656
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• 1992

The synthesis of epichlorohydrin was carried out by the epoxidation of allyl chloride with tert-butyl hydroperoxide(TBHP) over silica supported molybdenum catalyst. Kinetic study was performed at $60-80^{\circ}C$ and 10 atm with the molar ratio of TBHP/Allyl chloride between 0.01 and 0.1 in a batch reactor. The epoxidation of allyl chloride was inhibited by tert-butyl alcohol and kinetic data could be represented by Michaelis-Meten type rate equation. The reaction mechanism could be explained by the combination of reversible adsorption of TBHP and tert-butyl alcohol accompanied by reaction of allyl chloride with TBHP adsorbed on $Mo/SiO_2$ catalyst.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.835-842
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• 1999

Si3N4 -Si3N4 joints were made using Ag-Cu-Ti and Ag-Cu-In-Ti via brazing method and the change in joint strength was investigated after heat treatment at $400^{\circ}C$ or $650^{\circ}C$ for up to 2000h. The initial strength of as-brazed joints with Ag-Cu-In-Ti was lower but the reduction of the strength was less dramatic than that with Ag-Cu-Ti. The joints made of a new brazing alloy Au-Ni-Cr-Mo-Fe which is developed for high temperature applications were heat-treated at $650^{\circ}C$ for 1000h. As the heat treatment time increased the bond strength increased. The results of the joining system with Mo or Cu interlayer showed that the strength of the joint with Mo interlayer was higher but the system incurred problems in joint production Also it was found from oxidation experiment that Ti and In affected the oxidation resistance of brazing alloy.