• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.18-24
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• 2007

We report broadband cascode amplifiers of a single-ended and a balanced amplifier for the millimeter-wave applications. The amplifiers were fabricated using 0.1 ${\mu}m\;{\Gamma}-gate$ PHEMT technology on GaAs substrate. The single-ended cascode amplifier was designed and fabricated by using shunt peaking technology. The fabricated single-ended cascode amplifier shows 3 dB bandwidth of 37 GHz($18.5{\sim}55.5$ GHz) and the maximum $S_{21}$ gain of 9.38 dB. The balanced cascode amplifier using tandem couplers achieves 3 dB bandwidth and the maximum $S_{21}$ gain of 44.5 GHz($21{\sim}65.5$ GHz) and 10.4 dB at 60 GHz, respectively. The 3 dB bandwidth of the balanced cascode amplifier shows 20% lager than the single-ended cascode amplifier.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.182-188
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• 2006

In this study, we have designed the millimeter-wave passive imaging system which records energy that is reflected or emitted from the source and produces image. The lens and front-end of receiver appeared to be important in the system to detect input thermal noise signal. The lens for signal focusing has been designed by optical transfer function. Amplifier of the imaging systemhas been set up with 40dB in maximum gain, 5 dB in maximum noise figure, and 10GHz in bandwidth to enhance sensitivity for thermal noise and to receive it in wide-band width as well. The SBD MSS-20 141B10D diode has been used for the detector circuit to convert amplified millimeter-wave signals to DC output.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.6 s.348
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• pp.46-52
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• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.89-95
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• 2003

In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.36-41
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• 2007

We report the 94 GHz CPW branch-line bandpass filter for planar integrated millimeter-wave circuits. The branch-line coupler operates as a transversal filtering section by connecting the coupling ports to the open load stubs and taking the isolation port as the output node. For design of the 94 GHz branch-line bandpass filter, we built the CPW library and optimized the characteristic impedances and the lengths of the branch-line coupler and the open load stubs. The fabricated 94 GHz bandpass filter exhibits an insertion loss of 2.5 dB with an 11.7 % 3 dB relative bandwidth and the return loss is -18.5 dB at a center frequency of 94 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.4
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• pp.80-85
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• 2007

The passivation is one of the important technologies for protection of the devies from damage. In this paper, we fabricated $0.1{\mu}m\;{\Gamma}$--gate InAIAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on a GaAs substrate. And then the wafer with MHEMTs was divided into two pieces; one for passivation and another for without passivation experiments. The passivations were done by using both low-k BCB and Si3N4 thin films. DC and RF performances were measured and the results are compared. The MHEMTs with BCB passivation show lower degradation than ones with Si3N4 passivation.

• Journal of Advanced Navigation Technology
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• v.13 no.4
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• pp.544-550
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• 2009

In this paper, we proposed the radio wave propagation characteristics of the next-generation ultrafast wireless communication system in millimeter-wave fading channel. For considering doppler shift and Rayleigh fading simultaneously, the fading simulator of Jakes model implemented and analyzed the performance of the next-generation wireless communication system. In addition, the error rate characteristics of DS-CDMA system analyzed in the millimeter-wave fading channel and the system performance improved by coding technique and diversity technique.

• Electronics and Telecommunications Trends
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• v.33 no.5
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• pp.1-12
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• 2018

One of the most remarkable aspects of the recently completed 3GPP release-15 (5G new radio phase 1) is the fact that some millimeter-wave bands have been officially approved for 5G mobile communications. Because the demand for higher transmission capacity has only grown, other millimeter-wave or even higher-frequency terahertz-wave bands have attracted more attention over time. Based on this effort, this paper reviews and discusses the existing technologies and their trends in high-frequency circuits and systems at the millimeter and terahertz-wave bands, particularly for future mobile communications.

• Journal of electromagnetic engineering and science
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• v.5 no.3
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• pp.140-145
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• 2005

In this paper, an experimental investigation for return loss and a software-based prediction for interference level of single-packaged filtering antenna composed of dielectric waveguide filter and PCB(Printed Circuit Board) slot antenna in transceiver module have been carried out with several different feeding structures in millimeter-wave regime. The implementation and embedding method of the existing air-filled waveguide filters working at millimeter-wave frequency on general PCB substrate have been described. In a view of the implementation of each components, the dielectric waveguide embedded in PCB and LTCC(Low Temparature Co-fired Ceramic) substrates has employed the via fences as a replacement with side walls and common ground plane to prevent energy leakage. The characteristics of several prototypes of filtering antenna embedded in PCB substrate are considered by comparing the wideband and transmission characteristics as a function of bent angle of transmission line connecting two components. In addition, as an essential to the packaging of transceiver module working at millimeter-wave, miniaturization technology maintaining the performances of independent components and the important problems caused by integrating and connecting the different components in different layers are described in this paper.

• Journal of the Institute of Convergence Signal Processing
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• v.12 no.3
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• pp.217-221
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• 2011

GaAs-based and InP-based HEMTs(High Electron Mobility Transistors) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. GaAs-based MHEMTs(Metamorphic HEMTs) have some advantages, especially for cost, compared with InP-based ones. In this paper, the RF small-signal circuits of MHEMTs are simulated and analyzed for the design of millimeter-wave application systems. The simulation analysis for RF small-signal frequency can help and give some insights about the MHEMTs for the design of millimeter-wave application and communication systems.