• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.354-359
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• 2011

Silicon nitride ceramics were prepared by microwave gas phase reaction sintering. By this method higher density specimens were obtained for short time and at low temperature, compared than ones by conventional pressureless sintering, even though sintering behaviors showed same trend, the relative density of sintered body inverse-exponentially increases with sintering temperature and/or holding time. And grain size of ${\beta}$-phase of the microwave sintered body is bigger than one of the conventional pressureless sintered one. Also they showed good bending strengths and thermal shock resistances.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.10
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• pp.35-41
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• 1992

Ultra-thin silicon nitride films were fabricated with ECR(Electron cyclotron Resonance) nitrogen plasma at room temperature. Film thickness was about 50$\AA$ after nitridation for 1min at microwave power of 1000W, RF power of 500W, and NS12T pressure of ${\times}10^{-3}$ torr. 50$\AA$ fo nitride film was grown within 1 min and no appreciable growth occured thereafter. Dielectric breakdown strength and leakage current density in Al/SiN/Si structure were measured to be about 7-11 MV/cm and ${\times}10^{-10}~5{\times}10^{-10}A/cm^{2}$, respectively. Observed linear relationship in 1n(J/E)-vs-E$^{1/2}$ and no polarity-dependence of the leakage current indicated that the Poole-Frenkel emission is mainly responsible for the conduction in this nitrided silicon films.