• 한국세라믹학회지
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• 제43권4호
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• pp.235-241
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• 2006

Mullite short fibers have been fabricated by adapting the Kneading-Drying-Calcination (KDC) process and characterized. The effect of the addition of foaming agent and calcination temperature on the formation of mullite fibers from coal fly ash, was examined. In the present work, ammonium alum $NH_4Al(SO_4)_2\;12H_2O$ synthesized trom coal fly ash and sodium phosphate $Na_2HPO_4\;2H_2O$ were used as foaming agents. After calcination at $1300^{\circ}C$ for 10 h and then etching with 20% HF solution at $50^{\circ}C$ for 5 h using a microwave heating source, the alumina-deficient $(AI_2O_3/SiO_2$ = 1.13, molar ratio) orthorhombic mullite fibers with a width of ${\sim}0.8mm$ (aspect ratio >30), were prepared from the coal fly ash with $AI_2O_3/SiO_2$ = 0.32, molar ratio by the addition of $NH_4AI(SO_4)_2\;12H_2O$, and with further addition of 2 wt% sodium phosphate. The excessive addition of sodium phosphate rather decreased the formation of mullite fibers, possibly due to the large amount of liquid phase prior to mullitization reaction.

• 한국재료학회지
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• 제30권9호
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• pp.489-494
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• 2020

SiC is a material with excellent strength, heat resistance, and corrosion resistance. It is generally used as a material for SiC invertors, semiconductor susceptors, edge rings, MOCVD susceptors, and mechanical bearings. Recently, SiC single crystals for LED are expected to be a new market application. In addition, SiC is also used as a heating element applied directly to electrical energy. Research in this study has focused on the manufacture of heating elements that can raise the temperature in a short time by irradiating SiC-I₂ with microwaves with polarization difference, instead of applying electric energy directly to increase the convenience and efficiency. In this experiment, Polydimethylsilane (PDMS) with 1,2 wt% of iodine is synthesized under high temperature and pressure using an autoclave. The synthesized Polycarbosilane (PCS) is heat treated in an argon gas atmosphere after curing process. The experimental results obtain resonance peaks using FT-IR and UV-Visible, and the crystal structure is measured by XRD. Also, the heat-generating characteristics are determined in the frequency band of 2.45 GHz after heat treatment in an air atmosphere furnace.

• 한국응용과학기술학회지
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• 제33권1호
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• pp.23-29
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• 2016

육방정계 우르자이츠형의 산화아연은 n형 반도체로써 3.37 eV의 넓은 밴드갭 에너지와 60 meV의 큰 엑시톤 바인딩 에너지를 가진 물질이다. 가스센서, 발광 다이오드, 염료 감응 태양 전지, 염료오염의 분해 등의 넓은 범위에서 활용이 가능하다. 합성 시 마이크로파 수열합성법을 사용하게 되면 높은 수율, 빠른 반응속도, 에너지 절약의 장점이 있다. 아민첨가제는 수산이온 생성 및 킬레이트 효과로 인해 산화아연 입자 형상을 조정하는 역할을 한다. 본 논문에서는 전구체로는 질산아연육수화물을 사용하였고, 형상조정제로는 에탄올아민, 에틸렌디아민, 디에틸렌트리아민, 헥사메틸렌테트라민을 사용하였다. 수산화소듐을 사용하여 용액을 pH 11로 조정하였다. 합성된 산화아연은 별모양, 막대형, 꽃모양, 원추형의 다양한 형상을 확인할 수 있었다. 아민첨가제에 의한 물리 화학적 특성과 광학적 특성을 분석하기 위해 XRD, SEM, EDS, FT-IR, UV-vis 스펙트럼, PL 스펙트럼을 사용하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1545-1547
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta$-Sic-$TiB_2$ electroconductive ceramic composites were investigated as function of the liquid forming additives of $Al_{2}O_{3}+Y_{2}O_3$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_{5}Y_{3}O_{12}$). The relative density and the mechanical properties of composites were increased with increasing $Al_{2}O_{3}+Y_{2}O_3$ contents because YAG of reaction between $Al_{2}O_3$ and $Y_{2}O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with l2wt% $Al_{2}O_{3}+Y_{2}O_3$ additives at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism. the fracture toughness showed 7.1MPa${\cdot}m^{1/2}$. For composites added with l2wt% $Al_{2}O_{3}+Y_{2}O_3$ additives at room temperature The electrical resistivity and the resistance temperature coefficient respectively showed the lowest of 6.0${\sim}10^{-4}{\Omega}{\cdot}$ cm and 3.1${\times}10^{-3}/^{\circ}C$ for composite added with l2wt% $Al_{2}O_{3}+Y_{2}O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of 25$^{\circ}C$ to 700$^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• ETRI Journal
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• 제45권1호
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• pp.171-179
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• 2023

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13㎛-0.16㎛ to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.

• 한국결정성장학회지
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• 제33권6호
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• pp.261-267
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• 2023

마이크로파 유전체 적용을 위해 (Ca, Sr)(Zr, Ti)O₃ (CSZT) 계에서 MgO 첨가에 따른 결정 구조, 미세 구조, 및 유전 특성을 연구하였다. 고상 반응법을 통해 합성된 CSZT 분말은 orthorhombic 단일상을 형성하였다. CSZT의 시편을 각각 1200℃, 1300℃ 및 1400℃에서 소결하였고, 소결 후 모든 시편은 orthorhombic 단일상을 확인하였다. 또한 모든 소결 시편은 온도가 증가함에 따라 입자 크기가 증가하였다. 1 mol% MgO를 첨가한 시편의 경우도 소결 이후에 orthorhombic 구조를 갖는 것을 확인하였다. EDS 분석을 통해 1400℃에서 소결 중에 이차상이 형성된 것을 확인하였다. MgO 첨가된 CSZT의 입자크기분포와 치밀화는 첨가하지 않은 경우와 거의 유사했으나, 입자크기분포가 좁아지며 균일해지는 것을 확인하였다. MgO 첨가된 CSZT는 1 k Hz에서 ε_r = 34.14, tanδ = 0.00047, τ_ε = -3.58 ppm/℃로 우수한 저손실 유전 특성을 가졌다.

• Korean Chemical Engineering Research
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• 제60권4호
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• pp.594-605
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• 2022

마이크로웨이브 소성로를 이용하여 굴 패각을 소성하여 CaO 제조하였다. 제조된 CaO를 수화 반응시켜서 Ca(OH)₂를 분석하였다. 합성한 Ca(OH)₂를 주성분으로하여 외부용 수성 도료 배합하였다. 굴 패각(325 mesh, 43 ㎛)은 (a) 950 ℃/1 시간와 (b) 1,150 ℃/1 시간 동안 탈탄산화반응을 시켜 CaO를 제조하였다. (a)의 소성 조건에서는 CaO 56.7 wt%이고 (b)의 소성 조건에서는 CaO 100 wt%였다. 굴 패각의 소성에 의한 CaO를 석회석의 경우와 비교하기 위하여 석회석(25~30 mm)을 950 ℃/1 시간 동안 탈탄산화 반응시켜서 CaO를 제조하였으며, XRD 분석 결과 CaO 100 wt%로 분석 되었다. 굴 패각의 소성 조건인 (b) 1,150 ℃, 1시간으로 CaO를 제조하여 수화 반응을 통하여 Ca(OH)₂를 합성하였다. 제조된 CaO의 수화 조건은 (a) CaO : H₂O(100 g : 200 g)과 (b) CaO : H₂O(100 g : 400 g)로 수화 반응성을 실시하였다. 수화 반응 결과, 저 반응성으로 확인 되었다. 100 wt%의 Ca(OH)₂를 합성하였다. 특히 (a)의 수화 조건에서 합성한 Ca(OH)₂는 판상형으로 분석되었다. 굴 패각으로 합성한 Ca(OH)₂를 주성분으로 외부용 수성 도료를 배합하였다. 외부용 수성 도료 표준 규격(KS M 6010)의 15개 항목에 대하여 분석하였을 때 냉동안정성을 제외한 다른 모든 기준에 적합한 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 공업화학
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• 제8권3호
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• pp.395-402
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• 1997

ECR 산소 플라즈마를 사용한 건식산화법에 의해 두 가지 실리콘 배향에 대하여 실리콘 산화막을 제조한 후 Deal-Grove(D-G)모델과 Wolters-Zegers-van Duynhoven (W-Z)모델에 적용하여 시간에 따르는 막 두께의 변화를 살펴보았으며 산화속도와 산화막의 표면 morphology의 상관관계를 조사하였다. 실리콘 산화막의 두께는 Si(100)과 Si(111) 모두 반응 시간이 짧은 영역에서 선형적으로 증가하였으나 반응시간이 경과함에 따라 화학반응 속도 보다 산화막을 통과하는 반응성 라디칼들의 확산이 율속단계로 작용하여 산화속도의 증가폭이 다소 둔화되었다. D-G모델과 W-Z모델에서 확산 및 반응속도는 Si(100)보다 Si(111)이 더 큰 값을 갖기 때문에 반응속도는 1.13배 더 크게 나타났으며 이들 모델은 실험 값과 잘 일치하였다. 표면 morphology는 산화 속도가 증가해도 식각현상이 일어나지 않는 실험 조건에서 산화막의 표면 조도가 일정하였으며, 기판의 위치가 하단 전자석에 근접하고 마이크로파 출력이 증가하여 식각현상이 일어나는 실험 조건에서 표면 조도는 산화속도와 관계없이 크게 나타났다.