• Korean Journal of Materials Research
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• v.13 no.4
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• pp.259-265
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• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.941-946
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• 2001

Conductive microspheres with a density of 0.2 g/cc were fabricated by electroless silver plating for application to the light-weighted microwave absorbers. The silver plating was conducted with the variation of plating conditions (sensitizing condition, $AgNO_3$, concentration, amount of reducing agent). Specimens have very low electro-resistivity. Under an optimum processing condition, conductive microspheres with uniform silver plating layer can be produced. Rubber-sphere composites were fabricated and their microwave absorbing properties were measured by HP8722D Network Analyzer. It was found that the lower the electrical resistance of microsphere, the better the microwave absorbing properties. Feasibility of microwave absorbers using this microspheres can be demonstrated with the result of microwave reflection loss of -15 dB and thickness of 1.44 mm.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.340-345
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• 2003

B $i_2$ $O_3$-Ti $O_2$ composite dielectric ceramics have been prepared by a conventional solid state ceramic route. The composite ceramics were prepared with starting materials of different origin and the microwave dielectric properties were investigated. The sintered ceramics were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray microanalysis, Raman and microwave methods. Structural and microstructural analyses identified two separate phases: Ti $O_2$(rutile) and B $i_2$ $Ti_4$0$_{11}$. The separate grains of titania and bismuth titanate were distributed uniformly in the ceramic matrix. The composition 0.88Ti $O_2$-0.12B $i_2$ $Ti_4$ $O_{11}$ was found to have a Q$\times$f of 9300 GHz (measured at a frequency of 3.9 GHz), a temperature coefficient of frequency, $\tau$$_{cf}$ near zero and a high relative permittivity, $\varepsilon$r of 83. The microwave dielectric properties were measured down to 20$^{\circ}$K K. The quality factor increased on cooling the ceramic samples.les.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.900-905
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• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.590-598
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.113-113
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• 1993

• Journal of Technologic Dentistry
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• v.34 no.1
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• pp.11-21
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• 2012

Purpose: Densification and mechanical properties of dental zirconia ceramics were evaluated by different sintering methods. Materials and Methods: Y-TZP zirconia block(Kavo $Everest^{(R)}$ ZS blank, Kavo dental GmbH, Bismarckring, Germany) was used in this study. Sintering were performed in heat sintering furnace and microwave sintering furnace, and then experimented and analyzed on a change in densification according to the sintering time, a change in densification according to thickness, flexural strength and micro-structure in zirconia specimens. Results: Microwave sintering was very effective in considerable mechanical properties such as flexural strength and bulk density was drastically increased than conventional electric heating method. It is also shown that microwave sintering time was faster and more economical than common method to be present in qualities which equal or exceed. Conclusion: It will be important to seek the accurate sintering condition of dental zirconia by microwave sintering method and the continuous research is necessary for the study of relationship between sintering methods and mechanical properties.

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.272-278
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• 2012

Effects of ceramics on the microwave dielectric properties of polytetrafluoroethylene (PTFE) composites filled with $MgTiO_3$ (MTi) and/or $MgTa_2O_6$ (MTa) were investigated. The dielectric constant ($K$), quality factor ($Qf$), and temperature coefficient of resonant frequency ($TCF$) of the composites were dependent on the type and volume fraction ($V_f$) of the ceramics. For the composites mixed with MTa and MTi, the $K$ and $TCF$ values decreased with increasing MTi content. The $Qf$ values of the composites were affected by relative density. The measured $K$ values of the composites were compared with those predicted by several theoretical models. Good microwave dielectric properties with values of $K$=3.6, $Qf$ = 7,788 GHz, and $TCF$ = -0.19 ppm/$^{\circ}C$ were obtained for the composites with 0.1 $V_f$ ceramics (mixed 0.025MTa and 0.075MTi).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.84-87
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• 2000

The microwave dielectric properties of complex perovskite-structured $Ba(Mg_{1/3}Ta_{2/3})O_3$ ceramics were investigated with calcining condition. The BMT ceramics were prepared by conventional mixed oxide method. Calcining conditions were $1200^{\circ}C$ for 10hr., $1300^{\circ}C$ for 2hr., and 5hr., respectively. And the specimens were sintered at $1650{\mu}m$. The structural and microwave properties of BMT ceramics were investigated by XRD, SEM and network analyzer. In the case of BMT ceramics calcined at $1300^{\circ}C$ for 5 hr., dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.26, 31,144(at 1GHz), 6.11[ppm/$^{\circ}C$], respectively.