• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.217-220
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• 2014

Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increase the reaction area of graphite electrodes. In this study, we have investigated the growth properties of carbon nanowall (CNW) according to the ingredient of gas. Microwave plasma enhanced chemical vapor deposition (MPECVD) system was used to grow CNW on Si substrate with a variety of the reaction gas. The planar and vertical growth conditions of the grown CNWs according to the ingredient of the gas were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The electrical characteristics of CNWs were analyzed using a 4-point probe.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.686-689
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• 2013

The carbon nanowall (CNW) is a carbon-based nanomaterials and it was constructed with vertical structure graphenes and it has the highest surface density among carbon-based nanostructures. In this study, we have checked the growth properties of CNW according to the substrate angle. Microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow CNW on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. And, we have changed the substrate angle from $0^{\circ}$ to $90^{\circ}$ in steps of $30^{\circ}$. The planar and vertical conditions of the grown CNWs according to the substrate angle were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). In case of the growth angle increases, our experimental results showed that the length of the CNW was shortened and the content of carbon component was decreased.

• 한국표면공학회지
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• 제46권1호
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.75-75
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• 2009

• 한국재료학회지
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• 제13권7호
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• pp.415-419
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• 2003

Carbon nanotubes were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition method. The possibility of carbon nanotubes formation was related to the thickness of nickel catalyst. The growth behavior of carbon nanotubes under the identical thickness of nickel catalyst was strongly dependent on the magnitude of the applied bias voltage. High negative bias voltage (-400 V) gave the vertically well-aligned carbon nanotubes. The vertically well-aligned carbon nanotubes have the multi-walled structure with nickel catalyst at the end position of the nanotubes.

• 한국결정성장학회지
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• 제16권5호
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• pp.198-202
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• 2006

We could achieve the bridge-type formation of the iridium-catalyzed carbon nanofibers across the gap on the MgO substrate using microwave plasma enhanced chemical vapor deposition method. On the plane surface area of the MgO substrate, the iridium-catalyzed carbon nanofibers were grown as a lateral direction to the substrate. The bridge-type formation and/or the lateral growth of the iridium-catalyzed carbon nanofibers were interconnected with each other. Finally, they could form an entangled network having the bridge-type formation of the carbon nanofibers across the gap on the substrate and the laterally-grown carbon nanofibers on the plane surface area of the substrate. The entangled network showed the semiconductor electrical characteristics.

• 한국재료학회지
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• 제16권1호
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• pp.25-29
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• 2006

Vertical growth of iridium-catalyzed carbon nanofibers could be selectively grown on the MgO substrate using microwave plasma-enhanced chemical vapor deposition method. Growth positions of the iridium-catalyzed carbon nanofibers on the MgO substrate could be manipulated according to the applied bias voltage. At-150 V, the carbon nanofibers growth was confined only at the corner area of the substrate. Based on these results, we discussed the cause for the confinement of the vertically grown carbon nanofibers on the specific area of the MgO substrate as a function of the applied bias voltage.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.337-350
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• 1999

Thick diamond film having ~700${\mu}{\textrm}{m}$ thickness was deposited on polycrystalline molybdenum (Mo) substrate using high power (4kW) microwave plasma enhanced chemical vapor deposition (MPECVD) system. We could achieve free-standing diamond film via detaching as-deposited diamond film from the substrate by rapid cooling them under vacuum. We investigated the variation of photoconductivity after exposing the film surface to either oxygen or hydrogen plasma. At as-grown state, the growth side (the as-grown surface of the film) showed noticeable photoconductivity. The oxygen plasma treatment of this side led to the insulator. After exposing the film surface to hydrogen plasma, on the other hand, we could observe the reappearing of photoconductivity at the growth side. Based on these results, we suggest that the hydrogen plasma treatment may enhance the photoconductivity of free-standing diamond film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.269-272
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• 1995

As methane concentration was varietal, the textures of diamond films deposited on Si(100)substrate could be observed by XRD, SEM and Raman spectroscope. As a result, O$_2$plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100) substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110) surface and the high quality diamond with FWHM of Raman spectra being 3.8cm$\^$-1/ has been grown. As time goes by deposition time, the preferred orientation increases.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.270-276
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• 1996

As methane concentration was varied, the textures of diamond films deposited on Si(100)substrate were observed by XRD,SEM and Raman spectroscope. As a result, $O_{2}$ plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100)substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110)surface and the high quality diamond film with FWHM of Raman spectra being 3.8 $cm^{-1}$ / has been grown. As time goes by deposition time, the preferred orientation increases